BR34E02FVT-WTR [ROHM]

DDR/DDR2 (For memory module) SPD Memory; DDR / DDR2 (对于内存模块)内存SPD
BR34E02FVT-WTR
型号: BR34E02FVT-WTR
厂家: ROHM    ROHM
描述:

DDR/DDR2 (For memory module) SPD Memory
DDR / DDR2 (对于内存模块)内存SPD

存储 内存集成电路 光电二极管 双倍数据速率 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟
文件: 总20页 (文件大小:1184K)
中文:  中文翻译
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TECHNICAL NOTE  
Double-cell Memory for Plug & Play  
DDR/DDR2  
(For memory module) SPD Memory  
BR34E02-W  
Description  
BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)  
Features  
256×8 bit architecture serial EEPROM  
Wide operating voltage range: 1.7V-3.6V  
Two-wire serial interface  
High reliability connection using Au pads and Au wires  
Self-Timed Erase and Write Cycle  
Page Write Function (16byte)  
Write Protect Mode  
Settable Reversible Write Protect Function: 00h-7Fh  
Write Protect 1 (Onetime Rom)  
Write Protect 2 (Hardwire WP PIN)  
Low Power consumption  
: 00h-7Fh  
: 00h-FFh  
Write  
Read  
(at 1.7V )  
(at 1.7V )  
:
:
:
0.4mA (typ.)  
0.1mA(typ.)  
0.1μA(typ.)  
Standby ( at 1.7V )  
DATA security  
Write protect feature (WP pin)  
Inhibit to WRITE at low VCC  
Compact package: TSSOP-B8, VSON008X2030  
High reliability fine pattern CMOS technology  
Rewriting possible up to 1,000,000 times  
Data retention: 40 years  
Noise reduction Filtered inputs in SCL / SDA  
Initial data FFh at all addresses  
BR34E02-W Series  
Capacity Bit format  
2Kbit 256X8  
Type  
BR34E02-W  
Power Source Voltage TSSOP-B8 VSON008X2030  
1.7V3.6V  
Ver.A Aug.2007  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Supply Voltage  
Symbol  
Rating  
-0.3+6.5  
Unit  
V
VCC  
330(BR34E02FVT-W)  
*1  
Power Dissipation  
Pd  
mW  
300(BR34E02NUX-W) *2  
-65+125  
Storage Temperature  
Tstg  
V
Operating Temperature  
Terminal Voltage (A0)  
Terminal Voltage (etcetera)  
Topr  
-40+85  
-
-
-0.310.0  
-0.3VCC+0.3  
V
* Reduce by 3.3mW(*1), 3.0 mW(*2)/°C over 25°C  
Recommended operating conditions  
Parameter Symbol  
Rating  
1.73.6  
0VCC  
Unit  
V
V
Supply Voltage  
Input Voltage  
VCC  
IN  
Memory cell characteristicsTa=25, VCC=1.7V3.6V)  
Specification  
Parameter  
Unit  
Min.  
1,000,000  
40  
Typ.  
Max.  
Write / Erase Cycle *1  
Data Retention *1  
Cycles  
Years  
*1:Not 100% TESTED  
Electrical characteristics - DCUnless otherwise specified Ta=-40℃~+85, VCC=1.7V3.6V)  
Specification  
Parameter  
Symbol  
Unit  
Test Condition  
Min.  
Typ.  
Max.  
Vcc+0.3  
0.3 VCC  
0.4  
"H" Input Voltage  
VIH1  
VIL1  
VOL1  
VOL2  
ILI1  
0.7 VCC  
-
-
-
-
-
-
-
-
V
V
"L" Input Voltage  
-
-0.3  
-
"L" Output Voltage 1  
"L" Output Voltage 2  
Input Leakage Current 1  
Input Leakage Current 2  
Input Leakage Current 3  
Output Leakage Current  
V
IOL=2.1mA2.5VVCC3.6VSDA)  
IOL=0.7mA1.7VVCC2.5VSDA)  
VIN=0VVCCA0,A1,A2,SCL)  
VIN=0VVCCWP)  
0.2  
V
-1  
-1  
-1  
-1  
1
μA  
μA  
μA  
μA  
ILI2  
15  
ILI3  
20  
VIN=VHV(A0)  
ILO  
1
VOUT=0VVCC  
VCC=1.7V,fSCL=100HztWR=5ms  
Byte Write  
ICC1  
ICC2  
ICC3  
-
-
-
1.0  
3.0  
0.5  
mA  
mA  
mA  
-
-
-
Page Write  
Write Protect  
VCC =3.6V,fSCL=100Hz, tWR=5ms  
Byte Write  
Operating Current  
Page Write  
Write Protect  
VCC =3.6V,fSCL=100Hz  
Random Read  
Current Read  
Sequential Read  
VCC =3.6V,SDA,SCL= VCC  
Standby Current  
A0 HV Voltage  
ISB  
-
2.0  
10  
μA  
-
-
A0,A1,A2=GND,WP=GND  
VHV  
7
V
VHV-Vcc4.8V  
Note: This IC is not designed to be radiation-resistant.  
2/19  
Electrical characteristics - ACUnless otherwise specified Ta=-40℃~+85, VCC =1.7V3.6V)  
FAST-MODE  
STANDARD-MODE  
Parameter  
Clock Frequency  
Symbol  
2.5VVCC5.5V  
1.7VVCC5.5V  
Unit  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
fSCL  
tHIGH  
tLOW  
tR  
0.6  
1.2  
400  
0.3  
0.3  
0.9  
5
4.0  
4.7  
100  
1.0  
0.3  
3.5  
5
kHz  
μs  
μs  
μs  
μs  
μs  
μs  
ns  
Data Clock High Period  
Data Clock Low Period  
SDA and SCL Rise Time *1  
SDA and SCL Fall Time *1  
Start Condition Hold Time  
Start Condition Setup Time  
Input Data Hold Time  
Input Data Setup Time  
Output Data Delay Time  
Output Data Hold Time  
Stop Condition Setup Time  
Bus Free Time  
tF  
tHD:STA  
tSU:STA  
tHD:DAT  
tSU:DAT  
tPD  
0.6  
0.6  
0
4.0  
4.7  
0
250  
0.1  
0.1  
4.0  
4.7  
100  
0.1  
0.1  
0.6  
1.2  
ns  
μs  
μs  
μs  
μs  
ms  
tDH  
tSU:STO  
tBUF  
tWR  
Write Cycle Time  
Noise Spike Width (SDA  
and SCL)  
tI  
0.1  
0.1  
μs  
tHDWP  
tSUWP  
tHIGHWP  
0
0.1  
1.0  
0
ns  
WP Hold Time  
0.1  
1.0  
μs  
WP Setup Time  
μs  
WP High Period  
*1Not 100TESTED  
Fast / Standard Modes  
Fast mode and Standard mode differ only in operation frequency. Operations performed at 100kHz are considered in  
"Standard-mode", while those conducted at 400kHz are in "Fast-mode".  
Please note that these clock frequencies are maximum values. At lower power supply voltage it is difficult to operate at high  
speeds.  
The EEPROM can operate at 400kHz, between 2.5V and 3.6V, and at 100kHz from 1.7V-2.5V.  
Synchronous Data Timing  
tR  
tF  
tHIGH  
SCL  
SCL  
SDA  
DATA(n)  
tHD:STA  
tSU:DAT tLOW  
tHD:DAT  
DATA(1)  
D1  
SDA  
(IN)  
ACK  
ACK  
D0  
tBUF  
tPD  
tDH  
tWR  
STOP BIT  
SDA  
(OUT)  
WP  
Fig.1-(a) Synchronous Data Timing  
HDWP  
tSUWP  
SDA data is latched into the chip at the rising edge  
of SCL clock.  
Output data toggles at the falling edge of SCL clock.  
Fig.1-(d) WP Timing Of The Write Operation  
SCL  
SDA  
DATA(n)  
DATA(1)  
D1  
SCL  
D0  
ACK  
ACK  
tSU:STA  
tHD:STA  
tSU:STO  
tHIGH : WP  
tWR  
SDA  
WP  
STOP BIT  
START BIT  
Fig.1-(e) WP Timing Of The Write Cancel Operation  
Fig.1-(b) Start/Stop Bit Timing  
For WRITE operation, WP must be "Low" from the rising edge of  
the clock (which takes in D0 of first byte) until the end of tWR.  
(See Fig.1-(d) ) During this period, WRITE operation can be  
canceled by setting WP "High".See Fig.1-(e))  
When WP is set to "High" during tWR, WRITE operation is  
immediately ceased, making the data unreliable. It must then  
be re-written.  
SCL  
SDA  
D0  
WRITE DATA(n)  
ACK  
tWR  
STOP  
CONDITION  
START  
CONDITION  
Fig.1-(c) Write Cycle Timing  
3/19  
Block diagram  
PROTECT_MEMORY_ARRY  
2Kbit_MEMORY_ARRY  
A0 1  
A1 2  
8 VCC  
7 WP  
8bit  
8bit  
ADDRESS  
DECODER  
SLAVE , WORD  
DATA  
REGISTER  
8bit  
ADDRESS REGISTER  
START  
STOP  
A2 3  
6 SCL  
5 SDA  
CONTOROL LOGIC  
ACK  
GND 4  
HIGH VOLTAGE GEN.  
VCC LEVEL DETECT  
Fig.2 Block Diagram  
Pinout diagram and description  
Pin Name  
Input/Output  
Functions  
IN  
IN  
VCC  
Power Supply  
Ground 0V  
Slave Address Set.  
Serial Clock Input  
A0 1  
A1 2  
8 VCC  
GND  
A0,A1,A2  
SCL  
7 WP  
6 SCL  
5 SDA  
BR34E02FVT-W  
BR34E02NUX-W  
A2 3  
Slave and Word Address,  
Serial Data Input, Serial Data Output  
*1  
*2  
SDA  
WP  
IN / OUT  
IN  
GND 4  
Write Protect Input  
*1 Open drain output requires a pull-up resistor.  
*2 WP Pin has a Pull-Down resistor. Please leave unconnected or  
connect to GND when not in use.  
Fig.3 Pin Configuration  
Electrical characteristics curves  
The following characteristic data are typ. value.  
6
6
5
4
3
2
1
0
1
0.8  
0.6  
0.4  
0.2  
0
5
4
SPEC  
3
Ta=85℃  
Ta=-40℃  
Ta=25℃  
SPEC  
2
Ta=85℃  
Ta=85℃  
Ta=-40℃  
Ta=25℃  
Ta=25℃  
1
SPEC  
Ta=-40℃  
0
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
IOL1[mA]  
Fig.5 "L" Input Voltage VIL  
Fig.4 "H" Input Voltage VIH  
(A0,A1,A2,SCL,SDA,WP)  
Fig.6 "L" Output Voltage VOL1-IOL1  
(VCC=2.5V)  
(A0,A1,A2,SCL,SDA,WP)  
1
0.8  
0.6  
1.2  
1
16  
SPEC  
SPEC  
12  
0.8  
0.6  
0.4  
0.2  
0
8
Ta=85℃  
0.4  
Ta=25℃  
SPEC  
Ta=85℃  
4
Ta=25℃  
Ta=-40℃  
0.2  
0
Ta=85℃  
Ta=25℃  
Ta=-40℃  
Ta=-40℃  
0
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
IOL2[mA]  
VCC[V]  
VCC[V]  
Fig.7 "L" Output Voltage VOL2-IOL2  
(VCC=1.7V)  
Fig.9 Input Leakage Current ILI2  
(WP)  
Fig.8 Input Leakage Current ILI1  
(A0,A1,A2,SCL,SDA)  
4/19  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
3.5  
3
2.5  
2
SPEC1  
SPEC  
SPEC  
2.5  
2
fSCL=400kHz(VCC≧2.5V)  
fSCL=100kHz  
DATA=AAh  
fSCL=100kHz(1.7V≦Vcc<2.5V)  
DATA=AA  
1.5  
1
1.5  
1
Ta=85℃  
SPEC2  
Ta=25℃  
Ta=25℃  
Ta=85℃  
Ta=-40℃  
0.5  
0
Ta=85℃  
Ta=25℃  
0.5  
0
Ta=-40℃  
Ta=-40℃  
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
Fig.11 ReadVOCCp[Ve]rating Current ICC3  
(fSCL=400kHz)  
VCC[V]  
Fig.12 Standby Current ISB  
Fig.10 Write Operating Current ICC1,2  
(fSCL=100kHz,400kHz)  
5
10000  
5
4
3
2
1
0
Ta=85℃  
Ta=25℃  
SPEC2  
SPEC2  
Ta=-40℃  
4
1000  
3
SPEC1  
SPEC1:FAST-MODE  
SPEC1:FAST-MODE  
SPEC2:STANDARD-MODE  
Ta=85℃  
100  
SPEC2  
SPEC2:STANDARD-MODE  
2
Ta=-40℃  
Ta=25℃  
Ta=25℃  
Ta=-40℃  
SPEC1  
10  
1
0
Ta=85℃  
SPEC1  
SPEC1:FAST-MODE  
SPEC2:STANDARD-MODE  
1
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
VCC[V]  
Fig.15 Data Clock Low Period tLow  
Fig.13 Clock Frequency fSCL  
Fig.14 Data Clock High Period tHigh  
5
50  
5
SPEC2  
SPEC1,2  
SPEC2  
4
4
0
Ta=85℃  
Ta=25℃  
3
3
-50  
SPEC1:FAST-MODE  
SPEC1:FAST-MODE  
Ta=-40℃  
SPEC2:STANDARD-MODE  
SPEC2:STANDARD-MODE  
2
2
-100  
Ta=-40℃  
Ta=-40℃  
Ta=25℃  
Ta=25℃  
Ta=85℃  
SPEC1:FAST-MODE  
Ta=85℃  
1
1
SPEC2:STANDARD-MODE  
SPEC1  
SPEC1  
-150  
0
0
-200  
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
VCC[V]  
Fig.16 Start Condition Hold Time  
tHD:STA  
Fig.17 Start Condition Setup Time  
tSU:STA  
Fig.18 Data Hold Time  
tHD:DAT(High)  
300  
200  
300  
200  
100  
0
50  
0
SPEC2  
SPEC1,2  
SPEC1:FAST-MODE  
SPEC1  
Ta=85℃  
-50  
100  
SPEC2:STANDARD-MODE  
Ta=25℃  
Ta=-40℃  
Ta=85℃  
-100  
-150  
-200  
0
Ta=85℃  
Ta=25℃  
-100  
-200  
SPEC1:FAST-MODE  
Ta=-40℃  
-100  
SPEC1:FAST-MODE  
SPEC2:STANDARD-MODE  
Ta=25℃  
Ta=-40℃  
SPEC2:STANDARD-MODE  
-200  
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
VCC[V]  
Fig.19 Data Hold Time  
tHD:DAT(LOW)  
Fig.20 Input Data Setup Time  
tSU:DAT(HIGH)  
Fig.21 Input Data Setup Time  
tSU:DAT(LOW)  
5/19  
4
3
2
1
0
4
3
2
1
0
5
4
3
2
1
0
SPEC2  
SPEC2  
SPEC1:FAST-MODE  
SPEC1:FAST-MODE  
SPEC2:STANDARD-MODE  
SPEC2:STANDARD-MODE  
SPEC1:FAST-MODE  
SPEC2:STANDARD-MODE  
Ta=85℃  
Ta=25℃  
Ta=-40℃  
Ta=85℃  
SPEC1  
Ta=85℃  
Ta=25℃  
Ta=-40  
SPEC2  
Ta=25℃  
Ta=-40℃  
SPEC1  
SPEC2  
SPEC1  
SPEC1  
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
VCC[V]  
Fig.23 Output Data Hold Time  
tDH  
Fig.24 Stop Condition Setup Time  
tSU:STO  
Fig.22 Output Data Delay Time  
tPD  
0.6  
5
6
SPEC1:FAST-MODE  
SPEC2  
SPEC1,2  
SPEC2:STANDARD-MODE  
0.5  
5
4
Ta=-40℃  
0.4  
4
Ta=-40℃  
Ta=25℃  
Ta=25℃  
3
0.3  
SPEC1:FAST-MODE  
3
Ta=85℃  
Ta=85℃  
SPEC2:STANDARD-MODE  
2
0.2  
2
Ta=85℃  
SPEC1,2  
1
SPEC1  
0.1  
Ta=25℃  
Ta=-40℃  
1
SPEC1:FAST-MODE  
0
SPEC2:STANDARD-MODE  
0
0
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
VCC[V]  
Fig.27 Noise Spike Width  
tI(SCL H)  
Fig.25 Bus Free Time  
tBUF  
Fig.26 Write Cycle Time  
tWR  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
SPEC1:FAST-MODE  
SPEC1:FAST-MODE  
SPEC1:FAST-MODE  
SPEC2:STANDARD-MODE  
SPEC2:STANDARD-MODE  
SPEC2:STANDARD-MODE  
Ta=-40℃  
Ta=-40℃  
Ta=25℃  
Ta=-40℃  
Ta=25℃  
Ta=85℃  
Ta=85℃  
Ta=25℃  
Ta=85℃  
SPEC1,2  
SPEC1,2  
SPEC1,2  
0
1
2
3
4
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
VCC[V]  
Fig.28 Noise Spike Width  
tI(SCL L)  
Fig.29 Noise Spike Width  
tI(SDA H)  
Fig.30 Noise Spike Width  
tI(SDA L)  
1.2  
1
0.2  
SPEC1,2  
SPEC1,2  
0
SPEC1:FAST-MODE  
0.8  
0.6  
0.4  
0.2  
0
SPEC2:STANDARD-MODE  
SPEC1:FAST-MODE  
-0.2  
SPEC2:STANDARD-MODE  
Ta=25℃  
Ta=85℃  
-0.4  
Ta=-40℃  
Ta=25℃  
Ta=85℃  
Ta=-40℃  
-0.6  
0
1
2
3
4
0
1
2
3
4
VCC[V]  
VCC[V]  
Fig.32 WP High Period  
tHigh:WP  
Fig.31 WP Setup Time  
tSU:WP  
6/19  
Data transfer on the I2C BUS  
Data transfer on the I2C BUS  
The BUS is considered to be busy after the START condition and free a certain time after the STOP condition.  
Every SDA byte must be 8-bits long and requires an ACKNOWLEDGE signal after each byte. The devices have Master  
and Slave configurations. The Master device initiates and ends data transfer on the BUS and generates the clock  
signals in order to permit transfer.  
The EEPROM in a slave configuration is controlled by a unique address. Devices transmitting data are referred to as  
the Transmitter. The devices receiving the data are called Receiver.  
START Condition (Recognition of the START bit)  
All commands are proceeded by the start condition, which is a High to Low transition of SDA when SCL is High.  
The device continuously monitors the SDA and SCL lines for the start condition and will not respond to any command  
until this condition has been met. (See Fig.1-(b) START/STOP Bit Timing)  
STOP Condition (Recognition of STOP bit)  
All communications must be terminated by a stop condition, which is a Low to High transition of SDA when SCL is  
High. (See Fig.1-(b) START/STOP Bit Timing)  
Write Protect By Soft Ware  
Set Write Protect command and permanent set Write Protect command set data of 00h7Fh in 256 words write  
protection block. Clear Write Protect command can cancel write protection block which is set by set write Protect  
command. Cancel of write protection block which is set by permanent set Write Protect command at once is  
impossibility. When these commands are carried out, WP pin must be OPEN or GND.  
Acknowledge  
Acknowledge is a software used to indicate successful data transfers. The Transmitter device will release the BUS  
after transmitting eight bits. When inputting the slave address during write or read operation, the Transmitter is the μ  
-COM. When outputting the data during read operation, the Transmitter is the EEPROM.  
During the ninth clock cycle the Receiver will pull the SDA line Low to verify that the eight bits of data have been  
received. (When inputting the slave address during write or read operation, EEPROM is the receiver. When  
outputting the data during read operation the receiver is the μ-COM.)  
The device will respond with an Acknowledge after recognition of a START condition and its slave address (8bit).  
In WRITE mode, the device will respond with an Acknowledge after the receipt of each subsequent 8-bit word (word  
address and write data).  
In READ mode, the device will transmit eight bits of data, release the SDA line, and monitor the line for an  
Acknowledge.  
If an Acknowledge is detected and no STOP condition is generated by the Master, the device will continue to transmit  
the data. If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP  
condition before returning to standby mode.  
Device Addressing  
Following a START condition, the Master outputs the Slave address to be accessed. The most significant four bits  
of the slave address are the “device type indentifier.” For this EEPROM it is “1010.” (For WP register access this code  
is "0110".)  
The next three bits identify the specified device on the BUS (device address). The device address is defined by the  
state of the A0,A1 and A2 input pins. This IC works only when the device address input from the SDA pin corresponds  
to the status of the A0,A1 and A2 input pins. Using this address scheme allows up to eight devices to be connected to  
the BUS.  
7/19  
The last bit of the stream (R/WREAD/WRITE) determines the operation to be performed.  
R/W=0  
R/W=1  
・・・・  
・・・・  
WRITE (including word address input of Random Read)  
READ  
Slave Address Set Pin Device Type Device Address Read Write Mode  
Access Area  
A2  
A1  
A0  
1010  
A2 A1 A0  
R/W  
R/W  
2kbit Access to Memory  
Access to Permanent Set Write  
Protect Memory  
Access to Set Write Protect Memroy  
Access to Clear Write Protect MEmory  
A2  
A1  
A0  
A2 A1 A0  
0110  
GND  
GND  
GND  
Vcc  
VHV  
VHV  
0
0
0
1
1
1
R/W  
R/W  
WRITE PROTECT PIN(WP)  
When WP pin set to Vcc (H level), write protect is set for 256 words (all address). When WP pin set to GND (L level),  
it is enable to write 256 words (all address).  
If permanent protection is done by Write Protect command, lower half area (007Fh address) is inhibited writing  
regardless of WP pin state.  
WP pin has a Pull-Down resistor. Please be left unconnected or connect to GND when WP feature is not in use.  
Confirm Write Protect Resistor by ACK  
According to state of Write Protect Resistor, ACK is as follows.  
State of Write  
Protect Registor  
Write  
Cycle(tWR)  
No  
WP Input  
-
Input Command  
ACK  
Address  
-
ACK  
No ACK  
ACK  
Data  
ACK  
PSWP, SWP, CWP No ACK  
Page or Byte Write  
No ACK  
In case,  
protect by PSWP  
ACK  
WA7WA0  
D7D0 No ACK  
No  
(007Fh)  
SWP  
CWP  
PSWP  
No ACK  
ACK  
ACK  
-
-
-
No ACK  
ACK  
ACK  
-
-
-
No ACK  
ACK  
ACK  
No  
Yes  
Yes  
0
1
Page or Byte Write  
(007Fh)  
In case,  
protect by SWP  
ACK  
WA7WA0  
ACK  
D7D0 No ACK  
No  
No ACK  
No ACK  
No ACK  
SWP  
CSP  
PSWP  
No ACK  
ACK  
ACK  
-
-
-
No ACK  
ACK  
ACK  
-
-
-
No  
No  
No  
ACK  
ACK  
Page or Byte Write  
PSWP, SWP, CWP  
Page or Byte Write  
PSWP, SWP, CWP  
Page or Byte Write  
WA7WA0  
D7D0 No ACK  
No  
Yes  
Yes  
No  
No  
ACK  
ACK  
No ACK  
No ACK  
ACK  
ACK  
ACK  
ACK  
-
ACK  
ACK  
ACK  
ACK  
-
0
1
In case,  
Not protect  
WA7WA0  
-
WA7WA0  
D7D0  
-
D7D0  
- is Don’t Care  
State of Write Protect Registor  
In case, protect by PSWP  
Command  
PSWP, SWP, CWP No ACK  
ACK  
Address  
ACK  
Data  
ACK  
No ACK  
No ACK  
No ACK  
No ACK  
No ACK  
-
-
-
-
-
No ACK  
No ACK  
No ACK  
No ACK  
No ACK  
-
-
-
-
-
SWP  
CWP  
PSWP  
No ACK  
ACK  
ACK  
In case, protect by SWP  
In case, Not protect  
ACK  
PSWP, SWP, CWP  
8/19  
Command  
Write Cycle  
During WRITE CYCLE operation data is written in the EEPROM. The Byte Write Cycle is used to write only one byte. In  
the case of writing continuous data consisting of more than one byte, Page Write is used. The maximum bytes that can  
be written at one time is 16 bytes.  
S
T
A
R
T
W
R
I
S
T
O
P
SLAVE  
T
E
WORD  
DATA  
ADDRESS  
ADDRESS  
SDA  
LINE  
WA  
7
WA  
0
1
0
1
0 A2A1A0  
D7  
D0  
A
C
K
A
C
K
R
/
A
C
K
W
Fig.33 Byte Write Cycle Timing  
S
T
A
R
T
W
R
I
S
T
SLAVE  
W ORD  
O
P
T
DATA(n)  
DATA(n+15)  
ADDRESS  
ADDRESS(n)  
E
SDA  
LINE  
W A  
7
W A  
1
0 1 0 A2A1A0  
D7  
D0  
D0  
0
A
C
K
R A  
A
C
K
A
C
K
/
C
W K  
Fig.34 Page Write Cycle Timing  
With this command the data is programmed into the indicated word address.  
When the Master generates a STOP condition, the device begins the internal write cycle to the nonvolatile memory  
array.  
Once programming is started no commands are accepted for tWR (5ms max.).  
This device is capable of sixteen-byte Page Write operations.  
If the Master transmits more than sixteen words prior to generating the STOP condition, the address counter will “roll  
over” and the previously transmitted data will be overwritten.  
When two or more byte of data are input, the four low order address bits are internally incremented by one after the  
receipt of each word, while the four higher order bits of the address (WA7WA4) remain constant.  
9/19  
Command  
Read Cycle  
During Read Cycle operation data is read from the EEPROM. The Read Cycle is composed of Random Read Cycle and  
Current Read Cycle. The Random Read Cycle reads the data in the indicated address.  
The Current Read Cycle reads the data in the internally indicated address and verifies the data immediately after the  
Write Operation. The Sequential Read operation can be performed with both Current Read and Random Read. With the  
Sequential Read Cycle it is possible to continuously read the next data.  
It is necessary to input  
“High” at last ACK timing.  
W
R
I
S
T
A
R
T
S
T
A
R
T
R
E
A
D
S
T
SLAVE  
SLAVE  
T
E
W ORD  
O
P
DATA(n)  
ADDRESS  
ADDRESS  
ADDRESS(n)  
SDA  
LINE  
W A  
7
W A  
1
0
1
0 A2A1A0  
1
0 1 0 A2A1A0  
D7  
D0  
0
A
C
K
R A  
/ C  
A
C
K
R A  
/
C
W K  
W K  
Fig.35 Random Read Cycle Timing  
S
T
A
R
T
S
T
R
E
A
D
SLAVE  
ADDRESS  
O
P
It is necessary to input  
DATA  
“High” at last ACK timing.  
SDA  
LINE  
1
0
1
0 A2A1A0  
D7  
D0  
A
C
K
R
/
A
C
K
W
Fig.36 Current Read Cycle Timing  
Random Read operation allows the Master to access any memory location indicated by word address.  
In cases where the previous operation is Random or Current Read (which includes Sequential Read), the internal  
address counter is increased by one from the last accessed address (n). Thus Current Read outputs the data of the  
next word address (n+1).  
If an Acknowledge is detected and no STOP condition is generated by the Master (μ-COM), the device will continue to  
transmit data. (It can transmit all data (2kbit 256word))  
If an Acknowledge is not detected, the device will terminate further data transmissions and await a STOP condition  
before returning to standby mode.  
If an Acknowledge is detected with the "Low" level (not "High" level), the command will become Sequential Read, and  
the next data will be transmitted. Therefore, the Read command is not terminated. In order to terminate Read input  
Acknowledge with "High" always, then input a STOP condition.  
S
T
A
R
T
R
E
A
D
S
T
It is necessary to  
input “High” at  
SLAVE  
O
P
DATA(n)  
DATA(n+x)  
ADDRESS  
last ACK timing.  
SDA  
LINE  
1
0
1
A2A1A0  
D7  
D0  
D7  
D0  
0
A
C
K
R A  
A
C
K
A
C
K
/
C
W K  
Fig.37 Sequential Read Cycle Timing With Current Read)  
10/19  
Write Protect Cycle  
W
R
I
S
T
A
R
T
S
T
W ORD  
SLAVE  
T
E
O
P
ADDRESS  
DATA  
ADDRESS  
SDA  
LINE  
0
1
1
A2A1A0  
*
*
*
*
0
A
C
K
R A  
A
C
K
/
C
W P  
W K  
*:DON’T CARE  
Fig. 38 Permanent Write Protect Cycle  
Permanent set Write Protect command set data of 00h7Fh in 256 words write protection block. Clear Write Protect  
command can cancel write protection block which is set by set write Protect command. Cancel of write protection  
block which is set by permanent set Write Protect command at once is impossibility. When these commands are  
carried out, WP pin must be OPEN or GND.  
Permanent Set Write Protect command needs tWR from stop condition same as Byete Write and Page Write,  
During tWR, input command is canceled.  
Refer to P8/19 about reply of ACK in each protect state.  
W
R
I
S
T
A
R
T
S
T
W ORD  
SLAVE  
T
E
O
P
ADDRESS  
ADDRESS  
DATA  
SDA  
LINE  
0
1
1
0
0
0 1  
*
*
*
*
A
C
K
R A  
A
C
K
/
C
W P  
W K  
*:DON’T CARE  
Fig. 39 Set Write Protect Cycle  
Permanent set Write Protect command set data of 00h7Fh in 256 words write protection block. Clear Write Protect  
command can cancel write protection block which is set by set write Protect command. Cancel of write protection  
block which is set by permanent set Write Protect command at once is impossibility. When these commands are  
carried out, WP pin must be OPEN or GND.  
Permanent Set Protect command needs tWR from stop condition same as Byete Write and Page Write, During tWR,  
input command is canceled.  
Refer to P8/19 about reply of ACk in each protect state.  
11/19  
W
R
I
S
T
A
R
T
S
T
W ORD  
SLAVE  
T
E
O
P
ADDRESS  
DATA  
ADDRESS  
SDA  
LINE  
0
1
1
0
0
1 1  
*
*
*
*
A
C
K
R A  
A
C
K
/
C
W P  
W K  
*:DON’T CARE  
Fig. 40 Clear Write Protect Cycle  
Clear Write Protect command can cancel write protection block which is set by set write Protect command. Cancel  
of write protection block which is set by permanent set Write Protect command at once is impossibility. When these  
commands are carried out, WP pin must be OPEN or GND.  
Permanent Clear Write Protect command needs tWR from stop condition same as Byete Write and Page Write,  
During tWR, input command is canceled.  
Refer to P8/19 about reply of ACk in each protect state.  
Software Reset  
Execute software reset in the event that the device is in an unexpected state after power up and/or the command input  
needs to be reset. Below are three typesFig.39 –(a), (b), (c)of software reset:  
During dummy clock, release the SDA BUS (tied to VCC by a pull-up resistor). During this time the device may pull the SDA  
line Low for Acknowledge or the outputting of read data.If the Master sets the SDA line to High, it will conflict with the  
device output Low, which can cause current overload and result in instantaneous power down, which may damage the  
device.  
DUMMY CLOCK×14  
13  
START×2  
COMMAND  
COMMAND  
2
14  
1
SCL  
SDA  
Fig.39-(a) DUMMY CLOCK×14 + START+START  
START  
START  
DUMMY CLOCK×9  
1
2
COMMAND  
COMMAND  
8
9
SCL  
SDA  
Fig.39-(b) START + DUMMY CLOCK×9 + START  
START×9  
3
7
COMMAND  
COMMAND  
2
8
9
1
SCL  
SDA  
Fig.39-(c) START×9  
* COMMAND starts with start condition.  
12/19  
Acknowledge polling  
Since the IC ignores all input commands during the internal write cycle, no ACK signal will be returned.  
When the Master sends the next command after the Write command, if the device returns an ACK signal it means that the  
program is completed. No ACK signal indicates that the device is still busy.  
Using Acknowledge polling decreases the waiting time by tWR=5ms.  
When operating Write or Current Read after Write, first transmit the Slave address (R/W is"High" or "Low"). After the  
device returns the ACK signal continue word address input or data output.  
During the internal write cycle,  
THE FIRST WRITE COMMAND  
no ACK will be returned.  
(ACK=High)  
S
T
A
R
S
T
A
R
T
S
T
A
R
T
S
O
P
A
C
K
H
A
C
K
SLAVE  
ADDRESS  
SLAVE  
ADDRESS  
WRITE COMMAND  
・・・  
T
H
tWR  
THE SECOND WRITE COMMAND  
S
T
A
R
T
S
T
A
R
T
A
C
K
L
A
C
K
H
A
C
K
L
A
C
K
L
S
O
P
SLAVE  
ADDRESS  
SLAVE  
ADDRESS  
WORD  
ADDRESS  
DATA  
・・・  
tWR  
After the internal write cycle  
is completed, ACK will be returned  
(ACK=Low). Then input next  
Word Address and data.  
Fig.40 Successive Write Operation By Acknowledge Polling  
WP effective timing  
WP is normally fixed at "H" or "L". However, in case WP needs to be controlled in order to cancel the Write command, pay  
attention to “WP effective timing” as follows:  
The Write command is canceled by setting WP to "H" within the WP cancellation effective period.  
The period from the START condition to the rising edge of the clock (which takes in the data DO - the first byte of the Page  
Write data) is the ‘invalid cancellation period’. WP input is considered inconsequential during this period. The setup time  
for the rising edge of the SCL, which takes in DO, must be more than 100ns.  
The period from the rising edge of SCL (which takes in the data D0) to the end of internal write cycle (tWR) is the ‘effective  
cancellation period’. When WP is set to "H" during tWR, Write operation is stopped, making it necessary to rewrite the  
data.  
It is not necessary to wait for tWR (5ms max.) after stopping the Write command by WP because the device is in standby  
mode.  
The rising edge of the clock  
which take in D0  
・The rising edge  
SCL  
of SDA  
SCL  
SDA  
ACK  
SDA  
D0  
D1  
D0  
ACK  
AN ENLARGEMENT  
AN ENLARGEMENT  
S
T
A
R
T
A
C
K
L
A
C
K
L
A
C
K
L
S
T
A
C
K
L
tWR  
SLAVE  
ADDRESS  
WORD  
SDA  
WP  
DATA  
D7 D6 D5  
D2 D1 D0  
D4 D3  
O
P
ADDRESS  
WP cancellation  
effective period  
WP cancellation  
invalid period  
Stop of the write  
operation  
Data is not  
guaranteed  
No data will be written  
Fig.41 WP effective timing  
13/19  
Command cancellation from the START and STOP conditions  
Command input is canceled by successive inputs of START and STOP conditions. (Refer to Fig.42)  
However, during ACK or data output, the device may set the SDA line to Low, making operation of the START and STOP  
conditions impossible, and thus preventing reset. In this case execute reset by software. (Refer to Fig.39)  
The internal address counter will not be determined when operating the Cancel command by the START and STOP  
conditions during Random, Sequential or Current Read. Operate a Random Read in this case.  
SCL  
SDA  
1
0
1
0
STOP  
CONDITION  
START  
CONDITION  
Fig.42 Command cancellation by the START and STOP conditions during input of the Slave Address  
I/O Circuit  
SDA Pin Pull-up Resistor  
A pull-up resistor is required because SDA is an NMOS open drain. Determine the resistor value of (RPU) by considering  
the VIL and IL, and VOL-IOL characteristics. If a large RPU is chosen, the clock frequency needs to be slow. A smaller  
RPU will result in a larger operating current.  
Maximum RPU  
The maximum of RPU can be determined by the following factors.  
The SDA rise time determined by RPU and the capacitance of the BUS line(CBUS) must be less than tR.  
In addition, all other timings must be kept within the AC specifications.  
When the SDA BUS is High, the voltage A at the SDA BUS is determined from the total input leakage(IL) of all devices  
connected to the BUS. RPU must be higher than the input High level of the microcontroller and the device, including a  
noise margin 0.2VCC.  
BR34E02  
Microcontroller  
VCC-ILRPU-0.2 VCC VIH  
RPU  
CC IH  
IL  
0.8V -V  
PU  
R
SDA PIN  
A
Examples: When VCC =3V, IL=10μA, VIH=0.7 VCC  
According to ②  
IL  
IL  
0.8×3-0.7×3  
RPU  
10×10-6  
THE CAPACITANCE  
OF BUS LINE (CBUS)  
Fig.43 I/O Circuit  
kΩ]  
300  
14/19  
Minimum RPU  
The minimum value of RPU is determined by following factors.  
Meets the condition that VOLMAX=0.4V, IOLMAX=3mA when the output is Low.  
CC OL  
V
-V  
OL  
I  
PU  
R
CC OL  
V
-V  
PU  
R  
OL  
I
VOLMAX=0.4V must be lower than the input Low level of the microcontroller and the EEPROM  
including the recommended noise margin of 0.1VCC.  
VOLMAX VIL-0.1 VCC  
Examples: VCC=3V, VOL=0.4V, IOL=3mA, the VIL of the controller and the EEPROM is VIL=0.3VCC,  
3-0.4  
According to ①  
PU  
R
-3  
3×10  
]  
867  
and  
And  
VOL=0.4V]  
VIL=0.3×3  
=0.9V]  
so that condition is met  
SCL Pin Pull-up Resistor  
When SCL is controlled by the CMOS output the pull-up resistor at SCL is not required.  
However, should SCL be set to Hi-Z, connection of a pull-up resistor between SCL and VCC is recommended.  
Several kare recommended for the pull-up resistor in order to drive the output port of the microcontroller.  
A0, A1, A2, WP Pin connections  
Device Address Pin (A0, A1, A2) connections  
The status of the device address pins is compared with the device address sent by the Master. One of the devices that is  
connected to the identical BUS is selected. Pull up or down these pins or connect them to VCC or GND. Pins that are not  
used as device address (N.C.Pins) may be High, Low, or Hi-Z.  
WP Pin connection  
The WP input allows or prohibits write operations. When WP is High, only Read is available and Write to all address is  
prohibited. Both Read and Write are available when WP is Low.  
In the event that the device is used as a ROM, it is recommended that the WP input be pulled up or connected to VCC.  
When both READ and WRITE are operated, the WP input must be pulled down or connected to GND or controlled.  
Microcontroller connection  
Concerning Rs  
The open drain interface is recommended for the SDA port in the I2C BUS. However, if the Tri-state CMOS interface is  
applied to SDA, insert a series resistor (Rs) between the SDA pin of the device and the pull up resistor RPU is  
recommended, since it will serve to limit the current between the PMOS of the microcontroller, and the NMOS of the  
EEPROM. Rs also protects the SDA pin from surges. Therefore, Rs is able to be used though open drain inout of the  
SDA port.  
ACK  
SCL  
RPURS  
'H'OUTPUT OF  
SDA  
CONTROLLER  
“L” OUTPUT OF EEPROM  
The “H” output of controller and the “L” output of  
CONTROLLER  
EEPROM  
EEPROM may cause current overload to SDA line.  
Fig.44 I/O Circuit  
Fig.45 Input/Output Collision Timing  
15/19  
Rs Maximum  
The maximum value of Rs is determined by following factors.  
SDA rise time determined by RPU and the capacitance value of the BUS line (CBUS) of SDA must be less than tR. In  
addition, the other timings must be within the timing conditions of the AC.  
When the output from SDA is Low, the voltage of the BUS at  
A is determined by RPU, and Rs must be lower than  
the input Low level of the microcontroller, including recommended noise margin (0.1VCC).  
VCC  
(VCC-VOL)×RS  
+
VOL+0.1VCCVIL  
RPU+RS  
A
RPU  
RS  
VOL  
VIL-VOL-0.1VCC  
1.1VCC-VIL  
RS  
×
RPU  
IOL  
BUS  
CAPACITANCE  
Examples : When VCC=3VVIL=0.3VCCVOL=0.4VRPU=20kΩ  
0.3×3-0.4-0.1×3  
20×103  
According to RS  
×
VIL  
1.1×3-0.3×3  
EEPROM  
CONTROLLER  
1.67k]  
Fig.46 I/O Circuit  
Rs Minimum  
The minimum value of Rs is determined by the current overload during BUS conflict.  
Current overload may cause noises in the power line and instantaneous power down.  
The following conditions must be met, where “I” is the maximum permissible current, which depends on the Vcc line  
impedance as well as other factors. “I” current must be less than 10mA for EEPROM.  
Vcc  
I
RS  
Vcc  
RS  
I
RPU  
Examples: When VCC=3V, I=10mA  
3
"L" OUTPUT  
RS  
RS  
10×10-3  
MAXIMUM  
CURRENT  
"H" OUTPUT  
300]  
CONTROLLER  
Fig.47 I/O Circuit  
EEPROM  
16/19  
I2C BUS Input / Output equivalent circuits  
Input (A0,A2,SCL)  
Fig.48 Input Pin Circuit  
Input / Output (SDA)  
Fig.49 Input / Output Pin Circuit  
Input (A1)  
Fig.50 Input Pin Circuit  
Input (WP)  
Fig.51 Input Pin Circuit  
17/19  
Power Supply Notes  
VCC increases through the low voltage region where the internal circuit of IC and the microcontroller are unstable. In order  
to prevent malfunction, the IC has P.O.R and LVCC functionality. During power up, ensure that the following conditions are  
met to guaranty P.O.R. and LVCC operability.  
1. "SDA='H'" and "SCL='L' or 'H'".  
2. Follow the recommended conditions of tR, tOFF, Vbot so that P.O.R. will be activated during power up.  
tR  
VCC  
Recommended conditions of tR, tOFF, Vbot  
tR  
tOFF  
Vbot  
Below 10ms Above 10ms Below 0.3V  
Below 100ms Above 10ms Below 0.2V  
tOFF  
Vbot  
0
Fig.52 VCC rising wavefrom  
3. Prevent SDA and SCL from being "Hi-Z".  
In case that condition 1. and/or 2. cannot be met, take following actions.  
AIf unable to keep Condition 1 (SDA is "Low" during power up)  
Make sure that SDA and SCL are "High" as in the figure below.  
VCC  
tLOW  
SCL  
SDA  
After Vcc becomes stable  
After Vcc becomes stable  
tDH tSU:DAT  
tSU:DAT  
Fig.53 SCL="H" and SDA="L"  
Fig.54 SCL="L" and SDA="L"  
BIf unable to keep Condition 2  
After the power stabilizes, execute software reset. (See page 9,10)  
CIf unable to keep either Condition 1 or 2  
Follow Instruction A first, then B  
LVCC Circuit  
The LVCC circuit prevents Write operation at low voltage and prevents inadvertent writing. A voltage below the LVCC  
voltage (1.2V typ.) prohibits Write operation.  
VCC Noise  
Bypass Capacitor  
Noise and surges on the power line may cause abnormal function. It is recommended that bypass capacitors (0.1μF) be  
attached between VCC and GND externally.  
Cautions On Use  
1) Descrived numeric values and data are design representative values, and the values are not guaranteed.  
2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics  
further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with  
sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external  
parts and our LSI.  
3) Absolute maximum ratings  
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded,  
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case  
of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it  
that conditions exceeding the absolute maximum ratings should not be impressed to LSI.  
4) GND electric potential  
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is lower than that  
of GND terminal.  
5) Heat design  
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.  
6) Terminal to terminal short circuit and wrong packaging  
When to package LSI on to a board, pay sufficient attention to LSI direction and displacement. Wrong packaging  
may destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source,  
terminal and GND owing to foreign matter, LSI may be destructed.  
7) Use in a strong electromagnetic field may cause malfunction, therfore, evaluate design sufficiently.  
18/19  
Selection of order type  
B
R
3
4
E
0
2
F V T  
W
E
2
BUS type  
Product type  
Package type  
Capacity  
02=2K  
Package specifications  
ROHM type  
Double Cell  
E2:reel shape emboss taping  
FVT:TSSOP-B8  
NUX:VSON008X2030  
TR:reel shape emboss taping  
Package Specifications  
TSSOP-B8  
<Dimensions>  
<Tape and Reel Information>  
Embossed carer tape  
2500pcs  
Tape  
Quantity  
3.0±0.2  
E2  
Direction  
of feed  
8
5
(Pin 1is at the upper left when holding the reel with the left hand while  
pulling the tape out towards the right)  
1
4
0.15±0.1  
0.1  
0.22±0.1  
(0.52) 0.65  
Direction of feed  
Pin 1  
Reel  
Please order in multiples of the minimum quantity  
Unit:mm)  
VSON008X2030  
<Dimension>  
<Tape and Reel information>  
Tape  
Embossed carrier tape  
Quantity  
4000pcs  
TR  
Direction  
of feed  
(The direction is the 1pin of product is at the upper light when you hold  
reel on the left hand and you pull out the tape on the right hand)  
1Pin  
Direction of feed  
(Unit:mm)  
When you order , please order in times the amount of package quantity.  
Reel  
Catalog No.05T325Be '05.10 ROHM C 1000 TSU  
19/19  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level  
of reliability and the malfunction of which would directly endanger human life (such as medical  
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers  
and other safety devices), please be sure to consult with our sales representative in advance.  
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance  
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow  
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in  
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM  
cannot be held responsible for any damages arising from the use of the products under conditions out of the  
range of the specifications or due to non-compliance with the NOTES specified in this catalog.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact your nearest sales office.  
THE AMERICAS / EUPOPE / ASIA / JAPAN  
ROHM Customer Support System  
Contact us : webmaster@ rohm.co.jp  
www.rohm.com  
TEL : +81-75-311-2121  
FAX : +81-75-315-0172  
Copyright © 2007 ROHM CO.,LTD.  
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  
Appendix1-Rev2.0  

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