STPS2H100ZF [STMICROELECTRONICS]

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型号：	STPS2H100ZF
厂家：	ST
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STPS2H100

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2 A

100 V

175°C

0.70 V

T_j(max)

V_F(max)

FEATURES AND BENEFITS

■

NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

GOOD TRADE OFF BETWEEN LEAKAGE CUR-

RENT AND FORWARD VOLTAGE DROP

■

LOW LEAKAGE CURRENT

AVALANCHE CAPABILITY SPECIFIED

DO-41

DESCRIPTION

Axial Power Schottky rectifier suited for Switch

Mode Power Supply and high frequency

DC/DC converters. Packaged in DO-41, this

device is intended for use in low voltage, high

frequency inverters and small battery

chargers.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Value

100

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

I_FSM

I_RRM

Average forward current

T_L= 120°C δ = 0.5

Surge non repetitive forward current tp = 10 ms sinusoidal

Repetitive peak reverse current

tp = 2 µs square F = 1kHz

tp = 1µs Tj = 25°C

P_ARMRepetitive peak avalanche power

1500

T_stg

T_j

Storage temperature range

Maximum operating junction temperature *

- 65 to + 175

175

°C

V/µs

dV/dt Critical rate of rise of reverse voltage

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j − a)

July 2003 - Ed: 2A

1/4

STPS2H100

THERMAL RESISTANCES

Symbol

Parameter

Lead length = 10 mm

Lead lenght = 10 mm

Value

100

Unit

R_th(j-a)

R_th(j-l)

Junction to ambient

Junction to lead

°C/W

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min. Typ. Max.

Unit

µA

I_R*

Reverse leakage current

T_j= 25°C

V_R= V_RRM

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

0.2

0.5

V_F**

Forward voltage drop

I_F= 2 A

I_F= 4 A

0.86

0.70

0.92

0.78

0.65

0.72

Pulse test : * tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the maximum ₂conduction losses use the following equation :

P = 0.62 x I_F(AV)+ 0.04 x I_{F (RMS)}

Fig. 1: Conduction losses versus average current.

Fig. 2: Average forward current versus ambient

temperature (δ=0.5).

F(AV)

(W)

(A)

F(AV)

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

R_th(j-a)=R_th(j-I)

δ = 0.2

δ = 0.1

δ = 0.5

δ = 0.05

δ = 1

R_th(j-a)=100°C/W

(A)

(°C)

amb

F(AV)

=tp/T

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

100

125

150

175

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

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STPS2H100

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Fig. 6: Relative variation of thermal impedance

junction to ambient versus pulse duration.

(A)

th(j-a) th(j-a)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

T_a=25°C

T_a=75°C

δ = 0.5

T_a=125°C

δ = 0.2

δ = 0.1

δ=0.5

=tp/T

t(s)

t (s)

Single pulse

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E-03

1.E-02

1.E-01

1.E+00

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

I (µA)

C(pF)

1.E+03

100

T_j=150°C

F=1MHz

V_OSC=30mV

T_j=25°C

T_j=125°C

1.E+02

T_j=100°C

1.E+01

T_j=75°C

1.E+00

1.E-01

1.E-02

T_j=50°C

T_j=25°C

V (V)

100

Fig. 9-2: Forward voltage drop versus forward

current (high level).

Fig. 9-1: Forward voltage drop versus forward

current (low level).

(A)

100

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

T_j=125°C

(maximum values)

T_j=125°C

(maximum values)

T_j=125°C

(typical values)

T_j=25°C

(maximum values)

T_j=125°C

(typical values)

T_j=25°C

(maximum values)

V (V)

(V)

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

3/4

STPS2H100

Fig. 10: Thermal resistance versus lead length.

(°C/W)

120

100

R_th(j-a)

R_th(j-I)

(mm)

leads

PACKAGE MECHANICAL DATA

DO-41 (plastic)

REF.

DIMENSIONS

Millimeters Inches

Min. Max.

O/ B

Min.

Max.

4.07

5.20

0.160

0.080

1.102

0.028

0.205

2.04

2.71

0.107

0.034

0.712

0.863

Ordering type

Marking

Package

Weight Base qty Delivery mode

STPS2H100

cathode ring

2000

Ammopack

DO-41

0.34 g

STPS2H100RL

STPS2H100

cathode ring

5000

Tape & Reel

■

EPOXY MEETS UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

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