STPS2L25AFN [STMICROELECTRONICS]
Rectifier Diode;
| 型号： | STPS2L25AFN |
| 厂家： | 
ST |
| 描述： | Rectifier Diode 二极管 |
| 文件： | 总12页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS2L25
Datasheet
25 V, 2 A low drop power Schottky rectifier
Features
•
•
Very low forward voltage drop for less power dissipation
Optimized conduction/reverse losses trade-off which means the highest
efficiency in the applications
•
•
Avalanche rated
ECOPACK2 compliant
Applications
•
•
•
•
•
Cordless appliance
SSD
Battery charger
Telecom power
DC / DC converter
Description
Schottky rectifiers designed for high frequency miniature switched mode power
supplies such as adaptors and on board DC/DC converters.
Packaged in SMA Flat Notch or SMB for thermal resistance characteristic
improvement, the STPS2L25 is ideal for use in parallel with MOSFETs in
synchronous rectification.
Product status
STPS2L25
Product summary
Symbol
Value
2 A
I
F(AV)
V
25 V
RRM
T
V
150 °C
0.325 V
j(max.)
F(typ.)
DS1245 - Rev 7 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STPS2L25
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter
Value
25
Unit
V
V
Repetitive peak reverse voltage
Forward rms current
RRM
I
10
A
F(RMS)
T = 125 °C
SMB
L
I
Average forward current, δ = 0.5 square wave
Surge non repetitive forward current
2
A
A
F(AV)
T = 130 °C
L
SMA Flat Notch
SMB
75
90
I
t = 10 ms sinusoidal
p
FSM
SMA Flat Notch
P
t = 10 µs, T = 125 °C
Repetitive peak avalanche power
Storage temperature range
108
W
°C
°C
ARM
p
j
T
-65 to +150
+150
stg
Maximum operating junction temperature(1)
T
j
1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink.
th(j-a)
tot
j
Table 2. Thermal resistance parameter
Symbol
Parameter
Max. value
Unit
°C/W
SMB
25
20
R
th(j-l)
Junction to lead
SMA Flat Notch
For more information, please refer to the following application note :
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
15
Max.
90
Unit
T = 25 °C
-
-
-
-
-
-
µA
j
(1)
V
= V
RRM
I
Reverse leakage current
R
R
T = 125 °C
30
mA
j
T = 25 °C
0.450
0.375
0.530
0.510
j
I = 2 A
F
T = 125 °C
0.325
0.430
j
(1)
V
Forward voltage drop
V
F
T = 25 °C
j
I = 4 A
F
T = 125 °C
j
1. Pulse test: t = 380 µs, δ < 2%
p
To evaluate the conduction losses, use the following equation:
2
P = 0.24 x IF(AV) + 0.068 x IF (RMS)
For more information, please refer to the following application notes related to the power losses :
•
•
AN604: Calculation of conduction losses in a power rectifier
AN4021: Calculation of reverse losses on a power diode
DS1245 - Rev 7
page 2/12
STPS2L25
Characteristics (curves)
1.1
Characteristics (curves)
Figure 2. Average forward current versus ambient
temperature (δ = 0.5)
Figure 1. Average forward power dissipation versus
average forward current
I
(A)
F(AV)
P
(W)
F(AV)
1.2
1.1
1.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Rth(j-a)=Rth(j-l)
SMB
δ = 0.1
δ = 0.05
δ = 0.2
δ = 0.5
0.9
0.8
0.7
0.6
0.5
δ = 1
Rth(j-a)=100° C/W
0.4
0.3
T
T
0.2
0.1
0.0
T
(°C)
amb
tp
=tp/T
δ
I
F(AV)(A)
tp
=tp/T
δ
0
25
50
75
100
125
150
0.0
1.2
2.6
2.4
1.0
1.4
0.2
0.8
2.0
2.2
0.4 0.6
1.6
1.8
Figure 3. Normalized avalanche power derating versus
junction temperature (Tj = 125 °C)
Figure 4. Relative variation of thermal impedance junction
to ambient versus pulse duration
PARM(t )
p
PARM(10 µs)
Z
/R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
0.1
SMB
0.01
0.001
Single pulse
t (s)
p
tp(µs)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
10
100
1000
DS1245 - Rev 7
page 3/12
STPS2L25
Characteristics (curves)
Figure 5. Reverse leakage current versus reverse voltage
applied (typical values)
Figure 6. Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
I (mA)
R
1000
1.E+02
1.E+01
F=1MHz
OSC=30mVRMS
Tj=25°C
Tj=150°C
V
Tj=125°C
Tj=100°C
1.E+00
1.E-01
100
Tj=25°C
1.E-02
1.E-03
V
(V)
R
V
R
(V)
10
1
10
100
0
5
10
15
20
25
Figure 7. Forward voltage drop versus forward current
(high level)
Figure 8. Forward voltage drop versus forward current
(low level)
I (A)
F
I (A)
F
10.0
1.0
0.1
3.0
T
=125°C
j
(maximum values)
2.5
2.0
1.5
1.0
T
=125°C
j
(maximum values)
T
=125°C
j
(typical values)
T
=25°C
T
=125°C
j
j
(maximum values)
(typical values)
T
=25°C
j
(maximum values)
0.5
0.0
V
(V)
F
V
(V)
F
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 9. Forward voltage drop versus forward current
(typical values)
Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead
I (A)
F
R
th(j-a)
(°C/W)
10.00
1.00
0.10
200
150
100
50
Epoxy p rinted circuit board FR4, copper t hickness: 35 µm
SMB
Tj=125°C
Tj=150°C
Tj=25°C
S(Cu)(cm²)
V
(V)
F
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
DS1245 - Rev 7
page 4/12
STPS2L25
Characteristics (curves)
Figure 11. Thermal resistance junction to ambient versus copper surface under each lead (SMA Flat
Notch)
R
th(j-a)
(°C/W)
200
150
100
50
Epoxy printed circuit board FR4,copper thickness: 35 µm
SMA Flat Notch
S(Cu)(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DS1245 - Rev 7
page 5/12
STPS2L25
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1
SMB package information
•
•
Epoxy meets UL94, V0
Lead-free package
Figure 12. SMB package outline
E1
D
E
A1
C
A2
L
b
DS1245 - Rev 7
page 6/12
STPS2L25
SMB package information
Table 4. SMB package mechanical data
Dimensions
Millimeters
Ref.
Inches (for reference only)
Min.
1.90
0.05
1.95
0.15
3.30
5.10
4.05
0.75
Max.
2.45
0.20
2.20
0.40
3.95
5.60
4.60
1.50
Min.
0.074
0.001
0.076
0.005
0.129
0.200
0.159
0.029
Max.
0.097
0.008
0.087
0.016
0.156
0.221
0.182
0.060
A1
A2
b
c
D
E
E1
L
Figure 13. SMB recommended footprint
2.60
1.62
1.62
(0.064)
(0.064)
(0.102)
2.18
(0.086)
5.84
(0.230)
DS1245 - Rev 7
page 7/12
STPS2L25
SMA Flat Notch package information
2.2
SMA Flat Notch package information
•
•
•
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Band indicates cathode
Figure 14. SMA Flat Notch package outline
Table 5. SMA Flat Notch package mechanical data
Dimensions
Ref.
Millimeters
Typ.
Inches (for reference only)
Min.
Max.
Min.
Typ.
Max.
A1
A1
b
0.90
1.10
0.035
0.044
0.05
0.002
1.25
0.15
2.25
5.00
3.95
1.65
0.40
2.90
5.35
4.60
0.049
0.005
0.088
0.196
0.155
0.065
0.016
0.115
0.211
0.182
C
D
E
E1
G
2.00
0.85
0.079
0.033
G1
L
0.75
1.20
0.029
L1
L2
L3
V
0.45
0.45
0.05
0.018
0.018
0.002
8°
8°
8°
8°
V1
DS1245 - Rev 7
page 8/12
STPS2L25
SMA Flat Notch package information
Figure 15. SMA Flat Notch recommended footprint in mm (inches)
3.12
1.20
1.20
(0.047)
(0.047)
(0.123)
1.52
(0.060)
5.52
(0.217)
DS1245 - Rev 7
page 9/12
STPS2L25
Ordering Information
3
Ordering information
Table 6. Ordering information
Order code
STPS2L25U
Marking
G23
Package
SMB
Weight
0.107 g
0.039 g
Base qty.
2500
Delivery mode
Tape and reel
Tape and reel
STPS2L25AFN
A22
SMA Flat Notch
10 000
DS1245 - Rev 7
page 10/12
STPS2L25
Revision history
Table 7. Document revision history
Changes
Date
Version
Jul-2003
4A
5
Last update.
08-Feb-2007
Reformatted to current standard. Added ECOPACK statement. Added SMB flat package.
Updated Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) and
Figure 3. Normalized avalanche power derating versus junction temperature (T = 125 °C). Removed
SMB flat package.
09-Oct-2018
27-Sep-2019
6
7
j
Added Section 2.2 SMA Flat Notch package information.
DS1245 - Rev 7
page 11/12
STPS2L25
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© 2019 STMicroelectronics – All rights reserved
DS1245 - Rev 7
page 12/12
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