STPS2L30 [ETC]
LOW DROP POWER SCHOTTKY RECTIFIER ; 电力低压降肖特基整流器
| 型号： | STPS2L30 |
| 厂家： | 
ETC |
| 描述： | LOW DROP POWER SCHOTTKY RECTIFIER
|
| 文件： | 总5页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS2L30A
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 A
30 V
Tj (max)
VF (max)
150 °C
0.375 V
FEATURES AND BENEFITS
LOW COST DEVICE WITH LOW DROP
FORWARD VOLTAGE FOR LESS POWER
DISSIPATION.
SMA
JEDEC DO-214AC
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE
HIGHEST YIELD IN THE APPLICATIONS.
HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE.
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA, this device is especially
intended for use in parallel with MOSFETs in
synchronous rectification.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Repetitive peak reverse voltage
Value
30
Unit
V
VRRM
IF(RMS) RMS forward current
10
A
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
Average forward current
TL = 120°C δ = 0.5
2
A
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
tp = 10 ms Sinusoidal
tp = 2 µs F = 1kHz square
tp = 100 µs square
tp = 1µs Tj = 25°C
75
A
1
1
A
A
1500
W
°C
°C
V/µs
- 65 to + 150
150
Tj
Maximum operating junction temperature *
dV/dt
dPtot
Critical rate of rise of reverse voltage
1
10000
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
July 2003 - Ed: 3A
1/5
STPS2L30A
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to lead
30
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameters
Tests Conditions
Min. Typ. Max.
Unit
µA
mA
V
IR *
Reverse leakage current
Tj = 25°C
VR = VRRM
200
Tj = 100°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
6
15
VF *
Forward voltage drop
IF = 2 A
0.45
0.325 0.375
0.53
IF = 4 A
0.43
0.51
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.24 x IF(AV) + 0.068 IF (RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(av)(W)
IF(av)(A)
2.2
2.0
1.8
1.6
1.2
δ = 0.2
δ = 0.1
δ = 0.5
Rth(j-a)=Rth(j-l)
δ = 0.05
1.0
0.8
0.6
0.4
0.2
0.0
δ = 1
Rth(j-a)=120°C/W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T
T
tp
tp
=tp/T
=tp/T
δ
Tamb(°C)
δ
IF(av) (A)
0.0
0
25
50
75
100
125
150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
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STPS2L30A
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Zth(j-a)/Rth(j-a)
IM(A)
1.0
10
0.8
8
Ta=25°C
0.6
6
δ = 0.5
Ta=50°C
0.4
4
T
δ = 0.2
IM
Ta=100°C
0.2
2
δ = 0.1
t
tp
=tp/T
δ=0.5
δ
tp(s)
t(s)
Single pulse
0.0
1E-2
0
1E-1
1E+0
1E+1
1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
C(pF)
IR(mA)
1E+2
500
F=1MHz
Tj=25°C
Tj=150°C
Tj=125°C
1E+1
1E+0
Tj=100°C
100
1E-1
Tj=25°C
1E-2
VR(V)
VR(V)
10
1E-3
1
2
5
10
20
30
0
5
10
15
20
25
30
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STPS2L30A
Fig. 9-1: Forward voltage drop versus forward
current (maximum values, high level).
Fig. 9-2: Forward voltage drop versus forward
current (typical values, low level).
IFM(A)
IFM(A)
10.00
10.00
Tj=125°C
Tj=150°C
Typical values
Tj=150°C
1.00
Tj=125°C
Tj=25°C
Tj=25°C
1.00
0.10
Tj=100°C
VFM(V)
VFM(V)
0.01
0.10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Fig. 9-3: Forward voltage drop versus forward
current (maximum values, low level).
Fig. 10: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Rth(j-a) (°C/W)
IFM(A)
3.0
140
Typical values
Tj=150°C
Tj=25°C
120
100
80
2.5
Tj=125°C
2.0
Tj=100°C
1.5
1.0
60
40
0.5
20
VFM(V)
S(Cu) (cm²)
0.0
0
0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60
0
1
2
3
4
5
4/5
STPS2L30A
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
Millimeters Inches
E1
REF.
Min.
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
Max.
2.70
0.20
1.65
0.41
5.60
4.60
2.95
1.60
Min.
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
Max.
0.106
0.008
0.065
0.016
0.220
0.181
0.116
0.063
D
A1
A2
b
E
c
A1
E
A2
C
E1
D
L
b
L
FOOT PRINT DIMENSIONS (in millimeters)
1.65
1.45
2.40
1.45
Ordering type
Marking
G30
Package
Weight
Base qty
Delivery mode
STPS2L30A
SMA
0.068g
5000
Tape & reel
BAND INDICATES CATHODE
EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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