STPS2L25U [STMICROELECTRONICS]
LOW DROP POWER SCHOTTKY RECTIFIER; 电力低压降肖特基整流器
| 型号： | STPS2L25U |
| 厂家： | 
ST |
| 描述： | LOW DROP POWER SCHOTTKY RECTIFIER |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS2L25U
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
2 A
25 V
Tj (max)
VF (max)
150 °C
0.375 V
FEATURES AND BENEFITS
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION
SMB
JEDEC DO-214AA
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters.
Packaged in SMB (JEDEC DO214-AA), this device
is especially intended for use in parallel with MOS-
FETs in synchronous rectification.
ABSOLUTE RATINGS
Symbol
(limiting values)
Parameter
Value
25
Unit
V
VRRM
Repetitive peak reverse voltage
IF(RMS) RMS forward current
10
A
IF(AV)
IFSM
IRRM
IRSM
Tstg
Average forward current
TL = 125°C δ = 0.5
2
A
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Storage temperature range
tp = 10 ms Sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
75
A
1
1
A
A
°C
- 65 to + 150
150
°
C
Tj
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
µ
V/ s
dV/dt
10000
dPtot
dTj
1
* :
<
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
June 1999 - Ed: 3A
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STPS2L25U
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°
Rth(j-l)
Junction to lead
25
C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
Tests Conditions
Min. Typ. Max.
Unit
°
µ
A
IR *
Reverse leakage current
Tj = 25 C
VR = VRRM
90
°
Tj = 125 C
15
30
mA
V
°
VF *
Forward voltage drop
Tj = 25 C
IF = 2 A
0.45
°
Tj = 125 C
0.325 0.375
0.53
°
Tj = 25 C
IF = 4 A
Tj = 125°C
0.43
0.51
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum2conduction losses use the following equation :
P = 0.24 x IF(AV) + 0.068 IF (RMS)
Fig. 1:
average forward current.
Fig. 2:
Average forward current versus ambient
Average forward power dissipation versus
δ
temperature ( =0.5).
PF(av)(W)
IF(av)(A)
2.2
1.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
δ = 0.2
δ = 0.1
δ = 0.5
Rth(j-a)=Rth(j-l)
δ = 0.05
1.0
0.8
0.6
0.4
0.2
0.0
Rth(j-a)=100°C/W
δ = 1
T
T
Tamb(°C)
75
tp
=tp/T
IF(av) (A)
δ
tp
=tp/T
δ
0
25
50
100
125
150
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
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STPS2L25U
Fig. 3:
Fig. 4:
Relative variation of thermal impedance
junction to ambient versus pulse duration.
Non repetitive surge peak forward current
versus overload duration (maximum values).
Zth(j-a)/Rth(j-a)
IM(A)
10
1.0
9
8
7
0.8
Ta=25°C
6
5
4
3
2
1
0
δ = 0.5
0.6
Ta=50°C
0.4
δ = 0.2
Ta=100°C
T
I
M
δ = 0.1
0.2
t
t(s)
δ
=0.5
Single pulse
=tp/T
tp
tp(s)
δ
0.0
1E-2
1E-3
1E-2
1E-1
1E+0
1E-1
1E+0
1E+1
1E+2 5E+2
Fig. 5:
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
Reverse leakage current versus reverse
voltage applied (typical values).
C(pF)
IR(mA)
1E+2
500
Tj=150°C
F=1MHz
Tj=25°C
Tj=125°C
1E+1
Tj=100°C
1E+0
100
1E-1
Tj=25°C
1E-2
VR(V)
VR(V)
1E-3
10
0
5
10
15
20
25
1
2
5
10
20
30
Fig. 7:
rent (maximum values).
Fig. 8:
Forward voltage drop versus forward cur-
Thermal resistance junction to ambient ver-
sus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35 m).
µ
IFM(A)
Rth(j-a) (°C/W)
10.00
120
Typical values
Tj=150°C
100
80
Tj=125°C
1.00
Tj=25°C
Tj=100°C
60
0.10
0.01
40
20
VFM(V)
S(Cu) (cm²)
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
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STPS2L25U
PACKAGE MECHANICAL DATA
SMB
DIMENSIONS
Millimeters Inches
REF.
E1
Min.
Max.
Min.
Max.
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
D
c
E
E
A1
E1
D
A2
C
L
b
L
FOOT PRINT DIMENSIONS
(in millimeters)
2.3
1.52
2.75
1.52
Ordering type
Marking
G23
Package
Weight
0.107g
Base qty
Delivery mode
STPS2L25U
SMB
2500
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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