STPS260CE [STMICROELECTRONICS]
1A, 60V, 2 ELEMENT, SILICON, SIGNAL DIODE;
| 型号： | STPS260CE |
| 厂家： | 
ST |
| 描述： | 1A, 60V, 2 ELEMENT, SILICON, SIGNAL DIODE 光电二极管 |
| 文件： | 总3页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS260CE
SCHOTTKY RECTIFIER
PRELIMINARY DATASHEET
.
.
.
.
.
.
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
1 = A
A1
A2
1
2 = K
3 = A
K
2
4 = K
DESCRIPTION
Dual center tap schottky rectifier suited for switch-
mode power supply and high frequency DC to DC
converters.
Packaged in SOT 223, this device is intended for
surface mounting and use in low voltage, high fre-
quency inverters, free wheeling and polarity protec-
tion applications.
SOT 223
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Repetitive Peak Reverse Voltage
Value
Unit
VRRM
60
V
IF(RMS)
IF(AV)
RMS Forward Current
Per diode
TL = 130°C Per diode
1.4
A
A
Average Forward Current
1
2
δ = 0.5 Per device
IFSM
IRRM
Surge Non Repetitive Forward Current
Peak Repetitive Reverse Current
tp = 10 ms Per diode
Sinusoidal
10
1
A
A
tp = 2 µs
Per diode
F = 1KHz
Tstg
Tj
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 150
°C
dV/dt
Critical Rate of Rise of Reverse Voltage
1000
V/µs
THERMAL RESISTANCE
Symbol
Parameter
Value
Unit
RTH (j-t)
Junction to Tab for D.C
Total
Per diode
12
20
55
°C/W
RTH (j-a
)
Junction to Ambient with 5cm2 Copper Surface Under Tab
Coupling
RTH (c)
5
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ TJ(diode 1) = P(diode1) x RTH(Per diode) + P(diode 2) x RTH(c)
March 1992
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STPS260CE
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS ( Per diode )
Symbol
Tests Conditions
Min.
Typ.
Max.
Unit
IR **
Tj = 25°C
Tj = 100°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
VR = VRRM
500
µA
8
mA
V
VF *
IF = 2 A
IF = 1 A
IF = 2 A
0.82
0.65
0.91
Pulse test : * tp = 380 µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.48 x IF(AV) + 0.17 IF (RMS)
Voltage (V)
Marking
60
T26
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STPS260CE
PACKAGE MECHANICAL DATA
SOT223
DIMENSIONS
Millimeters Inches
3.3
REF.
Min. Typ. Max. Min. Typ. Max.
6.30 6.50 6.70 0.248 0.256 0.264
6.70 7.00 7.30 0.264 0.275 0.287
3.30 3.50 3.70 0.130 0.139 0.146
A
B
C
D
E
F
G
H
I
1.5
4.60
2.30
0.181
0.090
6.4
1.2
2.3
(3x)
2.90 3.00 3.10 0.114 0.118 0.122
0.60 0.70 0.80 0.023 0.027 0.031
1.50 1.60 1.70 0.059 0.063 0.067
0.43 0.45 0.47 0.017 0.018 0.019
0.50 0.60 0.70 0.019 0.023 0.027
0.63 0.65 0.67 0.024 0.025 0.026
1.5
4.6
J
K
L
Recommended soldering pattern SOT223
0.05
0.002
M
0.32
0.012
B
C
A
15°(4x)
H
0°/7°
J
I
L
M
E
K
D
F
G
Marking : Type number
Weight : 0.11 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted byimplication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorizedfor use ascritical components in life support devices or systems withoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
TURBOSWITCH, TRANSIL, TRISIL, SNUBBERLESS are Trademarks of SGS-THOMSON Microelectronics.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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