STPS2545CT-Y [STMICROELECTRONICS]

Automotive power Schottky rectifier; 汽车大功率肖特基整流


型号：	STPS2545CT-Y
厂家：	ST
描述：	Automotive power Schottky rectifier 汽车大功率肖特基整流
文件：	总7页 (文件大小：159K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS2545CT-Y

Automotive power Schottky rectifier

Datasheet − production data

Features

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ Avalanche capability specified

■ AEC-Q101 qualified

Description

TO-220AB

Dual center tab Schottky rectifier suited for switch

mode power supplies and high frequency DC to

DC converters.

Table 1.

Device summary

Symbol

I_F(AV)

V_RRM

T_{j (max)}

V_F(max)

Value

This device is especially intended for use in low

voltage, high frequency inverters, free-wheeling

and polarity protection in automotive applications.

2 x 12.5 A

45 V

175 °C

0.57 V

June 2012

Doc ID 18183 Rev 2

1/7

This is information on a product in full production.

www.st.com

Characteristics

STPS2545CT-Y

Characteristics

Table 2.

Symbol

Absolute ratings (limiting values, per diode)

Parameter

Value

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)Forward rms current

T_c= 160 °C

I_F(AV)Average forward current δ = 0.5

Per diode

12.5

I_FSM

Surge non repetitive forward current t_p= 10 ms sinusoidal

200

t_p= 1 µs, T_j= 25 °C

P_ARMRepetitive peak avalanche power

4800

T_stg

T_j

Storage temperature range

-65 to + 175

-40 to + 175

10000

°C

V/µs

Operating junction temperature range⁽¹⁾

dV/dt Critical rate of rise reverse voltage

dPtot

dTj

condition to avoid thermal runaway for a diode on its own heatsink.

Rth(j-a)

Table 3.

Symbol

Thermal resistances parameters

Parameter

Value

Unit

R_{th (j-c)}Junction to case

R_{th (c)}Coupling

Per diode

th(c)

1.6

0.6

°C/W

When the diodes 1 and 2 are used simultaneously:

ΔT (diode 1) = P(diode 1) x R

(per diode) + P(diode 2) x R

th(j-c)

Table 4.

Symbol

Static electrical characteristics (per diode)

Parameter

Tests conditions

T_j= 25 °C

T_j= 125 °C

T_j= 125 °C I_F= 12.5 A

Forward voltage drop T_j= 25 °C I_F= 25 A

T_j= 125 °C I_F= 25 A

Min.

Typ.

Max.

Unit

125

µA

Reverse leakage

current

(1)

I_R

V_R= V_RRM

0.50

0.57

0.84

0.72

(1)

V_F

0.65

1. Pulse test: t_p= 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.42 x I

+ 0.012 x I

F(AV)

F (RMS)

2/7

Doc ID 18183 Rev 2

STPS2545CT-Y

Characteristics

Figure 1.

Conduction losses versus average Figure 2.

Average forward current versus

current

ambient temperature (δ = 0.5)

PF(AV)(W)

IF(AV)(A)

Rth_(j-a)=Rth_(j-c)

δ = 0.2

δ = 0.5

δ = 0.1

δ = 0.05

δ = 1

Rth_(j-a)=50°C/W

IF(AV)(A)

7.5

Tamb(°C)

=tp/T

0.0

2.5

5.0

10.0

12.5

15.0

100

125

150

175

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

ARM

(T )

ARM

(25 °C)

(t )

ARM

(1 µs)

ARM

1.2

0.8

0.6

0.4

0.2

0.1

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

Figure 5.

Non repetitive surge peak forward Figure 6.

current versus overload duration

(maximum values)

Relative variation of thermal

impedance junction to case versus

pulse duration

IM(A)

200

Zth(j-c) / Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

180

160

140

120

100

δ = 0.5

T_C=25°C

T_C=75°C

δ = 0.2

δ = 0.1

T_C=125°C

Single pulse

t(s)

tP(s)

1.E+00

=tp/T

δ=0.5

1.E-03

1.E-02

1.E-01

1.E-03

1.E-02

1.E-01

1.E+00

Doc ID 18183 Rev 2

3/7

Characteristics

STPS2545CT-Y

Figure 7.

Reverse leakage current versus

Figure 8.

Junction capacitance versus

reverse voltage applied

(typical values)

reverse voltage applied

(typical values)

IR(mA)

C(nF)

10.0

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

F=1MHz

V_osc=30mV

T_j=25°C

T_j=150°C

T_j=125°C

T_j=100°C

1.0

T_j=75°C

T_j=50°C

T_j=25°C

VR(V)

0.1

100

Figure 9.

Forward voltage drop versus

forward current

Figure 10. Thermal resistance junction to

ambient versus copper surface

under tab

Rth(j-a)(°C/W)

FM(A)

100

Epoxy printed circuit board FR4,

copper thickness = 35 µm

T_j=125°C

(Maximum values)

T_j=125°C

(Typical values)

T_j=25°C

(Maximum values)

S(cm²)

FM(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

4/7

Doc ID 18183 Rev 2

STPS2545CT-Y

Package information

■

Epoxy meets UL94, V0

Lead-free package

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK is an ST trademark.

Table 5.

TO-220AB dimensions

Dimensions

Millimeters

Ref.

Inches

Min. Max.

Min.

Max.

4.40

1.23

2.40

0.49

0.61

1.14

4.95

2.40

4.60

1.32

2.72

0.70

0.88

1.70

5.15

2.70

10.40

0.173

0.048

0.094

0.019

0.024

0.044

0.194

0.094

0.393

0.181

0.051

0.107

0.027

0.034

0.066

0.202

0.106

0.409

Dia

16.4 typ.

0.645 typ.

0.511

0.104

0.600

0.244

0.137

0.551

0.116

0.620

0.259

0.154

2.65

15.25

6.20

3.50

2.95

15.75

6.60

3.93

2.6 typ.

0.102 typ.

Diam.

3.75

3.85

0.147

0.151

Note:

Leads are raw copper on all exposed areas before plating finishing.

Doc ID 18183 Rev 2

5/7

Ordering information

STPS2545CT-Y

Ordering information

Table 6.

Order code

STPS2545CTY

Ordering information

Marking

Package

Weight

Base qty Delivery mode

STPS2545CTY

TO-220AB

1.9 g

Tube

Revision history

Table 7.

Date

Document revision history

Revision

Changes

19-Sep-2011

28-Jun-2012

First issue.

Corrected typographical error in Table 3.

6/7

Doc ID 18183 Rev 2

STPS2545CT-Y

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Doc ID 18183 Rev 2

7/7

STPS2545CT-Y [STMICROELECTRONICS]

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