STP60NF03L_06 [STMICROELECTRONICS]
N-channel 30V - 0.008Ω - 60A TO-220 STripFET™ Power MOSFET; N沟道30V - 0.008Ω - 60A TO- 220的STripFET ™功率MOSFET
| 型号： | STP60NF03L_06 |
| 厂家： | 
ST |
| 描述： | N-channel 30V - 0.008Ω - 60A TO-220 STripFET™ Power MOSFET |
| 文件： | 总12页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP60NF03L
N-channel 30V - 0.008Ω - 60A TO-220
STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STP60NF03L
30V
<0.01Ω
60A
■ Low threshold drive
3
Description
2
1
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
TO-220
remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STP60NF03L
P60NF03L
TO-220
Tube
August 2006
Rev 4
1/12
www.st.com
12
Contents
STP60NF03L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP60NF03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VGS
VDGR
VGS
ID
Gate-source voltage
30
30
V
V
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
20
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
60
A
ID
42
A
(1)
IDM
240
100
0.67
650
175
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
W/°C
mJ
(2)
E
Single pulse avalanche energy
AS
TJ
Operating junction temperature
Storage temperature
°C
Tstg
-65 to 175
1. Pulse width limited by safe operating area
2. Starting Tj = 25°C, ID = 30A, VDD = 20V
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case Max
1.5
62.5
0.5
°C/W
°C/W
°C/W
Rthj-a
Thermal resistance junction-ambient Max
Rthc-sink Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
Tl
300
°C
3/12
Electrical characteristics
STP60NF03L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
30
V
VDS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
100
2.5
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
1
1.5
VGS= 10V, ID= 30A
VGS= 4.5V, ID= 30A
0.008 0.010
0.0095 0.015
Ω
Ω
Static drain-source on
resistance
RDS(on)
Table 4.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
VDS > ID(on) x RDS(on)max,
ID = 30A
(1)
gfs
Forward transconductance
60
S
Input capacitance
Ciss
Coss
Crss
2550
630
pF
pF
pF
Output capacitance
VDS =25V, f=1 MHz,
VGS=0
Reverse transfer
capacitance
215
VDD = 15V, ID = 30A,
RG = 4.7Ω, VGS = 4.5V
(see Figure 12)
td(on)
tr
Turn-on Delay Time
Rise Time
40
ns
ns
250
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
43
12
21
58
nC
nC
nC
V
DD=24V, ID = 60A
VGS =5V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/12
STP60NF03L
Electrical characteristics
Min Typ. Max Unit
Table 5.
Source drain diode
Parameter
Symbol
Test conditions
ISD
Source-drain current
60
240
1.5
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
ISDM
(2)
ISD=60A, VGS=0
VSD
ISD=60A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
75
100
2.6
ns
µC
A
di/dt = 100A/µs,
Qrr
VDD=15V, Tj=150°C
IRRM
(see Figure 14)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/12
Electrical characteristics
STP60NF03L
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/12
STP60NF03L
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/12
Test circuit
STP60NF03L
3
Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
8/12
STP60NF03L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
Package mechanical data
STP60NF03L
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
10/12
STP60NF03L
Revision history
5
Revision history
Table 6.
Date
Revision history
Revision
Changes
09-Sep-2004
09-Aug-2006
3
4
Complete document
New template, no content change
11/12
STP60NF03L
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
12/12
相关型号：
STP60NF06L
N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET
STMICROELECTR
STP60NF06LFP
N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET
STMICROELECTR
STP60NS04Z
N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
STMICROELECTR
STP60NS04ZB
N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY⑩ MOSFET
STMICROELECTR
STP60NS04ZB_06
N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET
STMICROELECTR
STP62NS04Z_06
N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明