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STP60NF10 [STMICROELECTRONICS]

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET; N沟道100V - 0.019ohm - 80A D2PAK / TO- 220的STripFET II功率MOSFET
STP60NF10
型号： STP60NF10
厂家： ST    ST
描述：

N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET
N沟道100V - 0.019ohm - 80A D2PAK / TO- 220的STripFET II功率MOSFET

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STB60NF10  
STP60NF10  
N-CHANNEL 100V - 0.019 Ω - 80A D²PAK/TO-220  
STripFET™ II POWER MOSFET  
Table 1: General Features  
Figure 1:Package  
V
DSS  
R
I
D
TYPE  
DS(on)  
STB60NF10  
STP60NF10  
100 V  
100 V  
< 0.023 Ω  
< 0.023 Ω  
80 A  
80 A  
■
■
■
■
TYPICAL RDS(on) = 0.019 Ω  
EXTREMELY HIGHL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
3
SURFACE-MOUNTING D²PAK (TO-263)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
1
3
2
2
D PAK  
TO-263  
1
(Suffix “T4”)  
TO-220  
DESCRIPTION  
This MOSFET series realized with STMicroelec-  
tronics unique STripFET™ process has specifical-  
ly been designed to minimize input capacitance  
and gate charge. It is therefore suitable as primary  
switch in advanced high-efficiency, high-frequency  
isolated DC-DC converters for Telecom and Com-  
puter applications. It is also intended for any appli-  
cations with low gate drive requirements.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
■
HIGH EFFICIENCY DC/DC CONVERTERS,  
INDUSTRIAL, AND LIGHTING EQUIPMENT.  
MOTOR CONTROL  
■
Table 2: Ordering Information  
SALES TYPE  
STB60NF10T4  
MARKING  
B60NF10  
P60NF10  
PACKAGE  
TO-263  
TO-220  
PACKAGING  
TAPE & REEL  
TUBE  
STP60NF10  
Table 3:ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
100  
GS  
V
DGR  
Drain-gate Voltage (R = 20 kΩ)  
100  
V
GS  
V
Gate- source Voltage  
± 20  
V
GS  
I (*)  
D
Drain Current (continuous) at T = 25°C  
80  
A
C
I
Drain Current (continuous) at T = 100°C  
66  
A
D
C
I
(•)  
Drain Current (pulsed)  
320  
A
DM  
P
tot  
Total Dissipation at T = 25°C  
300  
W
C
Derating Factor  
2
W/°C  
V/ns  
mJ  
°C  
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
16  
485  
dv/dt  
(2)  
E
AS  
T
stg  
-55 to 175  
(•) Pulse width limited by safe operating area.  
(**) Current Limited by Package  
(1) I ≤80A, di/dt ≤300A/µs, V ≤ V  
, T ≤ T  
j JMAX  
SD  
DD  
(BR)DSS  
o
(2) Starting T = 25 C, I = 40A, V = 30V  
j
D
DD  
Rev. 2.0  
May 2005  
1/10  
STB60NF10 STP60NF10  
Table 4: THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Maximum Lead Temperature For Soldering Purpose  
Max  
Max  
0.5  
62.5  
300  
°C/W  
°C/W  
°C  
T
l
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)  
Table 5: OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
D
= 250 µA, V = 0  
100  
V
V
GS  
(BR)DSS  
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 20 V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
Table 6: ON (*)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
3
Max.  
4
Unit  
V
V
R
V
V
= V  
I
= 250 µA  
= 40 A  
Gate Threshold Voltage  
2
GS(th)  
DS  
GS  
D
D
= 10 V  
I
Static Drain-source On  
Resistance  
0.019  
0.023  
Ω
GS  
DS(on)  
Table 7: DYNAMIC  
Symbol  
Parameter  
Test Conditions  
25 V = 40 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
DS =  
I
D
g
Forward Transconductance  
78  
S
fs  
C
V = 25V f = 1 MHz V = 0  
DS GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
4270  
470  
140  
pF  
pF  
pF  
iss  
C
oss  
C
rss  
2/10  
STB60NF10 STP60NF10  
ELECTRICAL CHARACTERISTICS (continued)  
Table 8: SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
= 50 V  
Min.  
Typ.  
Max.  
Unit  
V
R
I
D
= 40 A  
= 10 V  
t
Turn-on Delay Time  
Rise Time  
17  
56  
ns  
ns  
DD  
d(on)  
= 4.7 Ω  
V
GS  
t
G
r
(Resistive Load, Figure )  
Q
V
DD  
= 50V I = 80A V = 10V  
D GS  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
104  
20  
32  
nC  
nC  
nC  
g
Q
gs  
Q
gd  
Table 9: SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
= 50 V  
Min.  
Min.  
Typ.  
Max.  
Max.  
Unit  
V
R
I
D
= 40 A  
= 10 V  
Turn-off Delay Time  
Fall Time  
82  
23  
ns  
ns  
t
DD  
d(off)  
= 4.7Ω,  
V
GS  
t
f
G
(Resistive Load, Figure 3)  
Table 10: SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Typ.  
Unit  
I
Source-drain Current  
Source-drain Current (pulsed)  
80  
320  
A
A
SD  
( )  
I
•
SDM  
(*)  
I
I
= 80 A  
V
= 0  
GS  
V
Forward On Voltage  
1.3  
V
SD  
SD  
t
rr  
= 80 A  
= 50 V  
di/dt = 100A/µs  
T = 150°C  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
92  
340  
7.4  
ns  
µC  
A
SD  
Q
V
rr  
DD  
j
I
(see test circuit, Figure 5)  
RRM  
(*)  
(
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
•)Pulse width limited by safe operating area.  
Figure 4: Thermal Impedance  
Figure 3: Safe Operating Area  
3/10  
STB60NF10 STP60NF10  
Figure 5: Output Characteristics  
Figure 6: Transfer Characteristics  
Figure 7: Transconductance  
Figure 8: Static Drain-source On Resistance  
Figure 9: Gate Charge vs Gate-source Voltage  
Figure 10: Capacitance Variations  
4/10  
STB60NF10 STP60NF10  
Figure 11: Normalized Gate Threshold Voltage vs  
Figure 12: Normalized on Resistance vs Temperature  
Temperature  
Figure 13: Source-drain Diode Forward Characteristics  
Figure 14: Normalized Breakdown Voltage vs  
Temperature.  
.
.
.
5/10  
STB60NF10 STP60NF10  
Figure 16: Unclamped Inductive Waveform  
Figure 15: Unclamped Inductive Load Test Circuit  
Figure 17: Switching Times Test Circuits For Resis-  
tive Load  
Figure 18: Gate Charge test Circuit  
Figure 19: Test Circuit For Inductive Load Switch-  
ing And Diode Recovery Times  
6/10  
STB60NF10 STP60NF10  
2
D PAK MECHANICAL DATA  
mm.  
inch.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.001  
0.028  
0.045  
0.018  
0.048  
0.352  
TYP.  
TYP.  
0.181  
0.106  
0.009  
0.037  
0.067  
0.024  
0.054  
0.368  
A
A1  
A2  
B
2.49  
0.03  
0.7  
2.69  
0.23  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
0.6  
C2  
D
1.36  
9.35  
D1  
E
8
0.315  
0.334  
10  
10.4  
0.394  
0.409  
E1  
G
8.5  
4.88  
15  
5.28  
15.85  
1.4  
0.192  
0.591  
0.050  
0.055  
0.094  
0.208  
0.624  
0.055  
0.069  
0.126  
L
L2  
L3  
M
1.27  
1.4  
1.75  
3.2  
2.4  
R
0.4  
0.015  
V2  
0°  
8°  
0°  
8°  
7/10  
STB60NF10 STP60NF10  
TO-220 MECHANICAL DATA  
mm.  
inch.  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
TYP.  
0.181  
0.051  
0.107  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
A
C
4.4  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
D
E
F
F1  
F2  
G
G1  
H2  
L2  
L3  
L4  
L5  
L6  
L7  
L9  
DIA  
16.40  
28.90  
0.645  
1.137  
13  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
2.65  
15.25  
6.20  
3.50  
3.75  
2.95  
15.75  
6.60  
3.93  
3.85  
8/10  
STB60NF10 STP60NF10  
Table 11:Revision History  
Date  
Revision  
Description of Changes  
May 2005  
May 2005  
1.0  
2.0  
FIRST ISSUE  
ADDED PACKAGE D²PAK  
9/10  
STB60NF10 STP60NF10  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
All other names are the property of their respective owners.  
© 2005 STMicroelectronics - All Rights Reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America.  
www.st.com  
10/10  

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