STP60NF06LFP [STMICROELECTRONICS]
N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET; N沟道60V - 0.012欧姆 - 60A TO- 220 / TO- 220FP / D2PAK STripFET⑩ II功率MOSFET型号: | STP60NF06LFP |
厂家: | ST |
描述: | N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220FP/D2PAK STripFET⑩ II POWER MOSFET |
文件: | 总11页 (文件大小:474K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STB60NF06L
STP60NF06L STP60NF06LFP
2
N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D PAK
STripFET™ II POWER MOSFET
V
R
I
D
TYPE
DSS
DS(on)
STB60NF06L
STP60NF06L
STP60NF06LFP
60 V
60 V
60 V
<0.014 Ω
<0.014 Ω
<0.014 Ω
60 A
60 A
60 A(*)
■
■
■
■
TYPICAL R (on) = 0.012Ω
DS
3
3
1
2
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
1
2
D PAK
TO-263
TO-220FP
(Suffix “T4”)
o
■
■
■
175 C OPERATING RANGE
3
2
LOW THRESHOLD DRIVE
1
2
SURFACE-MOUNTING D PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
TO-220
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
■
HIGH-EFFICIENCY DC-DC CONVERTERS
■
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STB60NF06L
STP60NF06LFP
STP60NF06L
V
Drain-source Voltage (V = 0)
60
60
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
± 15
V
I
I
Drain Current (continuous) at T = 25°C
60
42
240
110
0.73
60(*)
42(*)
240(*)
30
A
A
A
W
W/°C
V/ns
mJ
V
D
C
Drain Current (continuous) at T = 100°C
D
(•)
C
I
Drain Current (pulsed)
DM
P
Total Dissipation at T = 25°C
tot
C
Derating Factor
0.2
(1)
(2)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
20
320
dv/dt
E
AS
V
ISO
------
2000
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(*) Refer to SOA for the max allowable current values on FP-type
due to Rth value
(1) I ≤ 60A, di/dt ≤ 600A/µs, V ≤ 48V, T ≤ T
SD DD j JMAX.
o
(2) Starting T = 25 C, I = 30A, V = 30V
j
D
DD
July 2003
1/11
.
STB60NF06L STP60NF06L/FP
THERMAL DATA
2
D PAK
TO-220FP
TO-220
Rthj-case
Thermal Resistance Junction-case
Max
1.36
5.0
°C/W
Rthj-amb
Rthj-pcb
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
Max
Max
62.5
35
300
°C/W
°C/W
°C
(#)
T
l
(#)Only for SMD,
2
When Mounted on 1 inch FR-4 board, 2 oz of Cu.
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
I
= 250 µA, V = 0
60
V
D
GS
V
(BR)DSS
Breakdown Voltage
V
= Max Rating
DS
Zero Gate Voltage
1
10
µA
µA
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 15V
±100
nA
I
GSS
Current (V = 0)
DS
(1)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
V
= V
I
= 250 µA
Gate Threshold Voltage
1
V
DS
GS
D
V
V
= 5 V
= 10 V
I
I
= 30 A
= 30 A
Static Drain-source On
Resistance
0.014
0.012
0.016
0.014
Ω
Ω
GS
D
D
R
DS(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V = 30 A
Min.
Typ.
Max.
Unit
(*)
V
V
I
D
g
fs
Forward Transconductance
20
S
DS
DS
C
= 25V, f = 1 MHz, V = 0
GS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
2000
360
125
pF
pF
pF
iss
C
oss
C
rss
2/11
STB60NF06L STP60NF06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V
Min.
Typ.
Max.
Unit
V
R
I
= 30 A
= 4.5 V
GS
Turn-on Delay Time
Rise Time
35
220
ns
ns
t
DD
D
d(on)
= 4.7 Ω
V
t
r
G
(Resistive Load, Figure 3)
Q
V
= 48 V I = 60 A V = 4.5V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
35
10
20
nC
nC
nC
g
DD
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30V
Min.
Min.
Typ.
Max.
Max.
Unit
V
R
I
= 30 A
= 4.5 V
Turn-off Delay Time
Fall Time
55
30
ns
ns
t
DD
D
d(off)
= 4.7Ω,
V
GS
t
G
f
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
SD
( )
•
I
SDM
(*)
I
I
= 60A
V
= 0
V
Forward On Voltage
1.3
V
SD
SD
GS
SD
t
= 60 A
= 30 V
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
110
250
4.5
ns
nC
A
rr
Q
V
T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
( )
• Pulse width limited by safe operating area.
Safe Operating Area
Safe Operating Area for TO-220FP
3/11
STB60NF06L STP60NF06L/FP
Thermal Impedance
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/11
STB60NF06L STP60NF06L/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
5/11
STB60NF06L STP60NF06L/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/11
STB60NF06L STP60NF06L/FP
2
D PAK MECHANICAL DATA
mm.
inch.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.001
0.028
0.045
0.018
0.048
0.352
TYP.
TYP.
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.21
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.394
0.409
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.591
0.050
0.055
0.094
0.208
0.624
0.055
0.069
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0°
8°
0°
8°
7/11
STB60NF06L STP60NF06L/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/11
STB60NF06L STP60NF06L/FP
TO-220 MECHANICAL DATA
mm.
inch.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
TYP.
TYP.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
A
C
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
D
E
F
F1
F2
G
G1
H2
L2
L3
L4
L5
L6
L7
L9
DIA
16.40
28.90
0.645
1.137
13
14
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
2.65
15.25
6.20
3.50
3.75
2.95
15.75
6.60
3.93
3.85
9/11
STB60NF06L STP60NF06L/FP
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
inch
MAX.
DIM.
MIN.
MAX.
MIN.
A
B
C
D
G
N
T
330
12.992
0.520
1.039
1.197
1.5
12.8
20.2
24.4
100
0.059
0.504
0.795
0.960
3.937
13.2
26.4
30.4
BASE QTY
BULK QTY
1000
1000
TAPE MECHANICAL DATA
mm
inch
DIM.
MIN.
10.5
15.7
1.5
MAX.
10.7
15.9
1.6
MIN.
0.413
0.618
0.059
0.062
0.065
0.449
0.189
0.153
0.468
0075
MAX.
0.421
0.626
0.063
0.063
0.073
0.456
0.197
0.161
0.476
0.082
A0
B0
D
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
50
1.574
T
0.25
23.7
0.35
24.3
.0.0098 0.0137
0.933 0.956
W
* on sales type
10/11
STB60NF06L STP60NF06L/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
11/11
相关型号:
STP60NS04Z
N - CHANNEL CLAMPED 10mohm - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
STMICROELECTR
STP60NS04ZB
N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY⑩ MOSFET
STMICROELECTR
STP60NS04ZB_06
N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET
STMICROELECTR
STP62NS04Z_06
N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET
STMICROELECTR
STP6308
STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STANSON
STP6621
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STANSON
©2020 ICPDF网 联系我们和版权申明