STP60NF06 [STMICROELECTRONICS]
N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET; N沟道60V - 0.014ohm - 60A TO- 220 / TO- 220FP STripFET⑩功率MOSFET
| 型号： | STP60NF06 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET |
| 文件： | 总9页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP60NF06
STP60NF06FP
N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP60NF06
STP60NF06FP
60 V
60 V
< 0.016 Ω
< 0.016 Ω
60A
60A
■
■
■
■
TYPICAL R (on) = 0.014Ω
DS
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
TO-220
TO-220FP
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP60NF06
STP60NF06FP
V
Drain-source Voltage (V = 0)
60
60
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
± 20
V
I
Drain Current (continuos) at T = 25°C
60
42
37
26
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
240
110
0.73
148
42
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.28
W/°C
V/ns
V
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
4
V
--
2500
ISO
T
stg
–65 to 175
°C
T
Max. Operating Junction Temperature
j
(●) Pulse width limited by safe operating area
(1) I ≤ 60A, di/dt≤400 A/µs, V ≤ 24V, Tj≤T
jMAX
SD
DD
January 2002
1/9
STP60NF06 - STP60NF06FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
1.36
3.57
°C/W
°C/W
°C
Rthj-amb
Max
62.5
300
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
30
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
360
mJ
(starting T = 25 °C, I = I , V = 30 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
60
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
10
DS
GS
C
I
Gate-body Leakage
= ± 20V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
4
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 30 A
0.014
0.016
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
=15V , I = 30 A
20
S
D
C
C
V
DS
= 25V, f = 1 MHz, V = 0
Input Capacitance
Output Capacitance
1810
360
pF
pF
pF
iss
GS
oss
C
rss
Reverse Transfer
Capacitance
125
2/9
STP60NF06 - STP60NF06FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 30 V, I = 30 A
Turn-on Delay Time
16
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
108
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48V, I =60A,V = 10V
49
18
14
nC
nC
nC
66
g
D
GS
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30 V, I = 30 A,
R = 4.7Ω, V = 10V
G GS
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
DD
43
20
ns
ns
d(off)
D
t
f
(see test circuit, Figure 3)
t
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =48V, I = 60 A
R = 4.7Ω, V = 10V
G GS
(see test circuit, Figure 3)
40
12
21
ns
ns
ns
d(off)
D
t
f
t
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
60
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
240
1.3
A
SDM
V
I
I
= 60 A, V = 0
V
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
73
182
5
ns
nC
A
= 60 A, di/dt = 100A/µs,
= 25V, T = 150°C
rr
SD
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP60NF06 - STP60NF06FP
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP60NF06 - STP60NF06FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP60NF06 - STP60NF06FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP60NF06 - STP60NF06FP
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP60NF06 - STP60NF06FP
TO-220FP MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
8/9
STP60NF06 - STP60NF06FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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9/9
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