STT60GK16B [SIRECT]
Thyristor-Thyristor Modules; 可控硅晶闸管模块
| 型号： | STT60GK16B |
| 厂家： | 
Sirectifier Global Corp. |
| 描述： | Thyristor-Thyristor Modules |
| 文件： | 总4页 (文件大小：829K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT60GKxxB
Thyristor-Thyristor Modules
Tolerance:+0.5mm
-
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
STT60GK08B
STT60GK12B
STT60GK14B
STT60GK16B
STT60GK18B
900
800
1300
1500
1700
1900
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
94
60
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1500
1600
1350
1450
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
11200
10750
9100
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
8830
150
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.45A
repetitive, IT=150A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.45A/us
TVJ=TVJM;
1000
V/us
W
(dv/dt)cr
RGK= ; method 1 (linear voltage rise)
TVJ=TVJM
IT=ITAVM
tp=30us
tp=300us
10
5
PGM
0.5
10
W
V
PGAV
VRGM
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
g
Md
Weight
110
Typ.
STT60GKxxB
Thyristor-Thyristor Modules
Test Conditions
Symbol
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
ITM=180A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
5
mA
V
IRRM, IDRM
VTM
1.65
0.85
3.7
V
VTO
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
1.5 max
1.6 max
V
VGT
IGT
VD=6V;
TVJ=25oC
100
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
IL
IH
450
200
2
mA
mA
us
tgd
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
150
us
tq
TVJ=TVJM; IT, IF=50A; -di/dt=3A/us
100
24
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.45
0.225
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.65
0.325
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
APPLICATIONS
ADVANTAGES
FEATURES
* DC motor control
* Space and weight savings
* International standard package
* Copper base plate
* Softstart AC motor controller
* Light, heat and temperature
control
* Simple mounting with two screws
* Improved temperature and power
cycling
* Glass passivated chips
* Isolation voltage 3600 V~
* Reduced protection circuits
* UL file NO.310749
* RoHs compliant
STT60GKxxB
Thyristor-Thyristor Modules
100
100
1
0.8
0.6 0.5
Rth(j-a)
1.2
rec.
1
.
sin.
180
/2 STT60B
180
1
.
W
W
/2 STD60B
1.4
120
90
75
75
50
25
1.7
2
cont.
60
30
rec.
15
50
2.5
3
3.5
4
25
5
6
8
PTAV
PTAV
K/W
0
0
0
50
100
150
65
0 ITAV
25
50
A
75
Ta
OC
Fig.1L Power dissipation per thyristor vs. on-state current
Fig.1R Power dissipation per thyristor vs. ambient temp
200
200
0.3
0.4
0.2
0.1
Rth(c-a)
.
.
1
1
STT60B
STD60B
W
Tc
W
75
0.5
150
150
0.6
0.7
0.8
85
95
100
100
50
1
1.2
1.5
105
2
50
OC
3
4
115
Pvtot
0
Pvtot
0
K/W
125
150
Ta
OC
50
0 IRMS
100
A
150
0
50
100
Fig.2L Power dissipation per module vs. rms current
Fig.2R Power dissipation per module vs. case temp
65
Tc
400
400
0.15
0.2
0.1
0.05
Rth(c-a)
.
.
W
2
2
STT60B
STD60B
W
75
85
95
0.25
0.3
300
300
R
L
0.4
200
200
0.5
0.6
0.7
105
115
0.8
100
100
1
1.2
1.5
2
Pvtot
0
Pvtot
0
OC
K/W
125
Ta
OC
0
50
100
150
0
25
50
75
100
125 A 150
ID
Fig.3L Power dissipation of two modules vs. direct current
Fig.3R Power dissipation of two modules vs. case temp
STT60GKxxB
Thyristor-Thyristor Modules
600
61
Tc
600
0.1 0.08 0.06 0.04
Rth(c-a)
.
3
3
STT60B
STD60B
W
W
.
0.12
72
82
93
500
500
0.15
w
3
400
0.2
400
300
200
0.25
B
6
0.3
300
200
0.4
0.5
104
114
OC
0.6
0.8
1
100
Pvtot
0
100
Pvtot
0
1.5
K/W
125
0 ID IRMS 50
OC
Ta
0
50
100
150
100
150
A
200
Fig.4L Power dissipation of three modules vs. direct and rms current
Fig.4R Power dissipation of three modules vs. case temp
1000
.
1
100A
TM=
/2
I
STT60B
STD60B
1
/2
.
STT60B
STD60B
Zth(j-s)
uC
K/W
0.8
.
1
/2
50A
20A
10A
.
1
/2
Zth(j-c)
5A
100
0.4
Tvj=125oC
Zth
0
10
0
10
A/us100
0.001
0.01
0.1
1
10
s 100
t
Fig.5 Recovered charge vs. current decrease
Fig.6 Transient thermal impedance vs. time
2
250
typ.
IT(OV)
1
max.
.
/2
STT60B
STD60B
1
.
/2
A
STT60B
STD60B
I
TSM
1.6
1.4
.
1
/2
.
1
/2
200
I
I
TSM(25 OC) =1500A
TSM(125OC)=1250A
150
100
1.2
1
.
V
0
V
RRM
.
0.5
1
RRM
.
V
RRM
0.8
50
Tvj=25 OC
0.6
0.4
IT
- Tvj=125OC
-
0
1
t
10
100
ms 1000
0
Vt 0.5
1
1.5
2
V2.5
Fig.7 On-state charactristics
Fig.8 Surge overload current vs. time
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