STT6405_09 [SECOS]
P-Channel Enhancement Mode Mos.FET; P沟道增强模式Mos.FET
| 型号： | STT6405_09 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode Mos.FET |
| 文件： | 总3页 (文件大小：861K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT6405
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TSOP-6
DESCRIPTION
The STT6405 uses advanced trench technology
to provide excellent on-resistance with low gate change.
The device is suitable for use as a load switch or in PWM applications.
A
E
L
B
FEATURES
ꢀ
ꢀ
ꢀ
P-Channel
Lower Gate Charge
Small Footprint & Low Profile Package
F
C
H
J
K
D G
Drain
MARKING CODE
1256
Millimeter
Millimeter
REF.
REF.
D 6 D 5 S 4
Min.
Max.
Min.
Max.
A
B
C
D
E
F
2.70
2.60
1.40
1.10 MAX.
1.90 REF.
3.10
3.00
1.80
G
H
J
K
L
0
0.10
0.60 REF.
0.12 REF.
0°
3
Gate
6 4 0 5
10°
ꢀꢀꢀꢀ
ꢀ
= Date Code
ꢁ
0.95 REF.
0.30
0.50
4
Source
1
2
3
G
D
D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±20
V
V
ID @TA=25℃
ID @TA=70℃
IDM
-5.0
-4.2
-20
2
Continuous Drain Current 3
Pulsed Drain Current 1
Power Dissipation
A
A
W
PD @TA=25℃
Linear Derating Factor
0.016
-55 ~ +150
62.5
W/ ℃
℃
℃/ W
Operating Junction and Storage Temperature Range
Tj, Tstg
RθJA
Thermal Resistance- Junction to Ambient3
Max.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=55℃)
Static Drain-Source On-Resistance2
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
BVDSS
VGS(th)
gfs
-30
-1.0
-
-
-
V
V
S
VGS = 0, ID= -250 µA
VDS = VGS, ID= -250µA
VDS = -5V, ID = -5.0A
-3.0
-
±100
-1
-5
50
75
18
-
-
-
-
-
-
-
-
-
-
8.6
IGSS
-
-
-
-
nA VGS = ±20 V
VDS = -30 V, VGS = 0
IDSS
µA
VDS = -24 V, VGS = 0
VGS = -10 V, ID = -5.0 A
VGS = -4.5 V, ID = -4.0 A
ID = -5.0 A
RDS(ON)
mΩ
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
14.7
2
3.8
8.3
5
nC VDS = -15 V
VGS = -10 V
VDS = -15 V
VGS = -10 V
RG = 3Ω
RL = 3Ω
ns
29
14
-
700 840
120
75
V
GS = 0 V
pF VDS = -15 V
f = 1.0 MHz
Ω
-
-
-
10
f=1.0 MHz
SOURCE-DRAIN DIODE
Forward On Voltage2
VSD
Trr
-
-
-
-
-1.0
-
-
V
ns
nC
IS = -1.0 A, VGS= 0 V
IS = -5.0A, VGS=0V,
dl/dt= 100A/µs
Reverse Recovery Time2
Reverse Recovery Charge
23.5
13.4
Qrr
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 156℃/W when mounted on Min. copper pad.
28-Oct-2009 Rev. B
Page 1 of 3
STT6405
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES
28-Oct-2009 Rev. B
Page 2 of 3
STT6405
-5.0 A, -30 V, RDS(ON) 50 mΩ
P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES
28-Oct-2009 Rev. B
Page 3 of 3
相关型号：
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET
SECOS
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