STT6601 [SECOS]

N & P-Channel Enhancement Mode Mos.FET; N' P沟道增强模式Mos.FET


型号：	STT6601
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N & P-Channel Enhancement Mode Mos.FET N' P沟道增强模式Mos.FET
文件：	总6页 (文件大小：490K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench

technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

performance. These devices are particularly suited for low voltage applications such as notebook computer power management

and other battery-powered circuits where high-side switching, low in-line power loss and resistance to transients are needed.

FEATURES

APPLICATIONS

z N-Channel

z Battery powered systems

z Portable devices

30V/2.8A, R_DS(ON)= 68mΩ@VGS = 10 V

z Power management in NB

z DC to DC converter, load switch, DSC,

LCD display inverter

30V/2.3A, R_DS(ON)= 78mΩ@VGS = 4.5 V

30V/1.5A, R_DS(ON)= 108mΩ@VGS = 2.5 V

z P-Channel

-30V/-2.8A, R_DS(ON)= 105mΩ@VGS = 10 V

-30V/-2.5A, R_DS(ON)= 120mΩ@VGS = 4.5 V

-30V/-1.5A, R_DS(ON)= 150mΩ@VGS = 2.5 V

z Super high density cell design for extremely low R_DS(ON)

z Exceptional on-resistance and maximum DC current capability

z TSOP-6P package design

PACKAGE DIMENSIONS

Millimeter

Min. Max.

1.10 Max

Millimeter

Min. Max.

REF.

0.45 Ref

0.10

1.00

0.60 Ref

0.70

0°

0.30

10°

0.12 Ref

0.50

2.70

2.60

1.40

3.10

3.00

1.80

0.95 Ref

1.90 Ref

Week code: A~Z (1~26); a ~ z (27 ~ 52)

ABSOLUTE MAXIMUM RATINGS

Ratings

Parameter

Symbol

Unit

N-Channel

P-Channel

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D@TA=25℃

I_D@TA=70℃

I_DM

±12

2.8

2.3

-30

±12

-2.8

-2.1

Continuous Drain Current (TJ=150℃)

Pulsed Drain Current

-8

P_D@TA=25℃

P_D@TA=70℃

I_S

1.15

0.75

Power Dissipation

Continuous Source Current (Diode Conduction)

Thermal Resistance- Junction to Ambient

1.25

-1.4

T ≦ 10 sec

RθJA

℃/W

℃

Steady State

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

01-June-2007 Rev. C

Page 1 of 6

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source Breakdown

Voltage

Symbol Min.

Typ.

Max.

Unit

Test Conditions

V_GS=0, I_D=250uA

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

BV_DSS

-30

1.6

-1.0

V_GS=0, I_D=-250uA

0.8

V_DS=V_GS, I_D=250uA

V_DS=V_GS, I_D=-250uA

V_DS=4.5V, I_D=-6.0A

V_DS=-10V, I_D=-2.8A

V_DS= 0 V, V_GS=±12 V

V_DS=24 V, V_GS=0 V

V_DS=-24V, V_GS=0 V

V_DS=24V, V_GS=0 V, T_J=55℃

V_DS=-24V, V_GS=0 V, T_J=55℃

V_DS≧5V, V_GS=10 V

V_DS≦ -5V, V_GS= -10 V

V_GS=10V, I_D=2.8A

Gate Threshold Voltage

Forward Transconductance

Gate Leakage Current

V_GS(th)

-0.4

4.6

g_fs

±100

I_GSS

Zero Gate Voltage Drain Current

-1

I_DSS

(Tj=25℃)

-10

On-State Drain Current

I_D(on)

-6

0.048 0.068

0.077 0.105

0.054 0.078

0.092 0.120

0.079 0.108

0.118 0.150

V_GS=-10V, I_D=-2.8A

V_GS=4.5V, I_D=2.3A

Drain-Source On-Resistance

Ω

R_DS(ON)

V_GS=-4.5V, I_D=-2.5A

V_GS=2.5V, I_D=1.5A

V_GS=-2.5V, I_D=-1.5A

4.2

5.8

0.6

0.8

1.5

2.5

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Q_g

N-Channel

V_DS=15V, V_GS=4.5V , I_D=2.0A

P-Channel

Q_gs

V_DS=-15V, V_GS=-4.5V ,I_D=-2.0A

Q_gd

T_d(on)

Turn-on Time

Turn-off Time

2.5

3.9

N-Channel

V_DD=15V

P-Channel

V_DD=-15V

R_L=15Ω

T_r

ns R_L=10Ω

V_GEN=10V

R_G=3Ω

V_GEN=-10V

R_G=3Ω

T_d(off)

T_f

01-June-2007 Rev. C

Page 2 of 6

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

CHARACTERISTIC CURVES (N-Channel)

01-June-2007 Rev. C

Page 3 of 6

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

01-June-2007 Rev. C

Page 4 of 6

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

CHARACTERISTIC CURVES (N-Channel)

01-June-2007 Rev. C

Page 5 of 6

STT6601

(N-Ch) 2.8 A, 30 V, RDS(ON) 68 mΩ

(P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ

N & P-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

01-June-2007 Rev. C

Page 6 of 6

STT6601 [SECOS]

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