STT6602 [SECOS]
N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET; N-CH ： 3.3A ， 30V ， RDS （ ON） 65米？ P -CH ： -2.3A ， -30V ， RDS （ ON） 120米？ N' P沟道增强模式Mos.FET
| 型号： | STT6602 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch: 3.3A, 30V, RDS(ON) 65 m P-Ch: -2.3A, -30V, RDS(ON) 120 m N & P-Channel Enhancement Mode Mos.FET |
| 文件： | 总7页 (文件大小：2989K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TSOP-6
DESCRIPTION
The STT6602 uses advanced trench technology to
A
E
provide excellent on-resistance and low gate charge.
The complementary MOSFETs form a high-speed
power inverter, suitable for a multitude of applications.
The TSOP-6 package is universally used for all
commercial-industrial surface mount applications.
L
6
5
4
B
1
2
3
F
FEATURES
C
H
J
ꢁ
Low Gate Change
Low On-resistance
K
D G
ꢁ
MARKING
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
2.70
2.60
1.40
1.10 MAX.
1.90 REF.
3.10
3.00
1.80
G
H
J
K
L
0
0.10
6602
ꢀꢀꢀꢀ
0.60 REF.
0.12 REF.
0°
Date Code
10°
0.95 REF.
0.30
0.50
PACKAGE INFORMATION
TOP VIEW
Package
MPQ
Leader Size
TSOP-6
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Ratings
Parameter
Symbol
Unit
N-Channel
P-Channel
-30
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
3.3
2.6
10
V
V
±20
TA=25°C
TA=70°C
-2.3
Continuous Drain Current 2
ID
A
-1.8
Pulsed Drain Current 1
Power Dissipation @TA=25°C
Linear Derating Factor
IDM
PD
-10
A
W
1.14
0.01
W / °C
°C
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Junction to Ambient 2
Notes:
Rθ
JA
110
°C / W
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in2 copper pad of FR4 board, t≦5sec; 180°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 1 of 7
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
-30
1
-1
-
-
-
-
VGS=0, ID=250µA
Drain-Source Breakdown
Voltage
BVDSS
VGS(th)
gfs
V
V
-
2.5
-2.5
-
VGS=0, ID=-250µA
VDS=VGS, ID=250µA
VDS=VGS, ID= -250µA
VDS=5V, ID=3A
-
Gate-Threshold Voltage
-
4
Forward Transconductance
Gate-Source Leakage Current
S
-
2
-
VDS= -5V, ID= -2A
VGS= ±20V
-
-
±100
IGSS
nA
-
-
±
100
1
VGS= ±20V
-
-
VDS=30 V, VGS=0
VDS= -30 V, VGS=0
VDS=24V, VGS=0
VDS= -24V, VGS=0
VGS=10V, ID=3A
VGS= -10V, ID= -2A
VGS=4.5V, ID=2A
VGS= -4.5V, ID= -1A
-
-
-1
Drain-Source Leakage Current
Drain-Source On-Resistance 1
IDSS
uA
-
-
25
-
-
-25
-
-
65
-
-
120
RDS(ON)
mΩ
-
-
90
-
-
170
-
3.1
3
-
-
Total Gate Charge1
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time1
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
N-Channel
VDS=25V, VGS= 4.5V, ID= 3A
-
-
1.2
0.78
1.6
1.6
3.3
7
-
nC
-
-
P-Channel
VDS= -25V, VGS= -4.5V, ID= -2.0A
-
-
-
-
-
-
-
-
N-Channel
VDS= 15V, RG= 3.3Ω,RD=15Ω
VGS= 10V, ID= 1A
-
2.5
6
-
-
-
nS
-
13.2
15
1.7
7.5
200
260
40
55
20
44
2.3
4.3
-
P-Channel
VDS= -15V, RG= 3.3Ω,RD=15Ω
VGS=-5V, ID= -1A
Turn-off Delay Time
Fall Time
Td(off)
-
-
-
-
Tf
-
-
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
N-Channel
VGS=0, VDS=25V, f=1.0MHz
-
-
-
-
pF
-
-
P-Channel
-
-
V
GS=0, VDS=-25V, f=1.0MHz
-
-
-
3.0
5
Ω
f=1.0MHz
-
Notes:
1. Pulse test
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 2 of 7
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Source-Drain Diode
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
1.2
IS=0.9A, VGS=0
Forward On Voltage1
VSD
V
-1.2
IS= -0.9A, VGS=0
14
15
7
-
-
-
-
IS=3A, VGS=0 ,dI/dt=100A/µs
IS= -2A, VGS=0 ,dI/dt=100A/µs
IS=3A, VGS=0 ,dI/dt=100A/µs
IS= -2A, VGS=0 ,dI/dt=100A/µs
Reverse Recovery Time
Reverse Recovery Charge
Trr
ns
nC
Qrr
7
Notes:
1. Pulse test
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 3 of 7
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 4 of 7
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 5 of 7
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 6 of 7
STT6602
N-Ch: 3.3A, 30V, RDS(ON) 65 mΩ
P-Ch: -2.3A, -30V, RDS(ON) 120 mΩ
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 7 of 7
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