STD60GK14 [SIRECTIFIER]
Thyristor-Diode Modules, Diode-Thyristor Modules; 晶闸管，二极管模块，二极管，晶闸管模块
| 型号： | STD60GK14 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Thyristor-Diode Modules, Diode-Thyristor Modules |
| 文件： | 总4页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
VRSM
VDSM
V
VRRM
VDRM
V
STD/SDT60GK08 900
STD/SDT60GK12 1300
STD/SDT60GK14 1500
STD/SDT60GK16 1700
STD/SDT60GK18 1900
800
1200
1400
1600
1800
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS, IFRMS TVJ=TVJM
100
60
A
TAVM, IFAVM TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1500
1600
1350
1450
ITSM, IFSM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
11200
10750
9100
VR=0
i2dt
A2s
TVJ=TVJM
VR=0
8830
150
TVJ=TVJM
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.45A
repetitive, IT=150A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.45A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
1000
V/us
W
(dv/dt)cr
TVJ=TVJM
PGM
tp=30us
tp=300us
10
5
IT=ITAVM
0.5
10
W
V
PGAV
VRGM
-40...+125
125
-40...+125
TVJ
TVJM
Tstg
oC
50/60Hz, RMS
IISOL<1mA
t=1min
t=1s
3000
3600
VISOL
V~
_
Mounting torque (M5)
Terminal connection torque (M5)
2.5-4.0/22-35
2.5-4.0/22-35
Nm/lb.in.
g
Md
Typical including screws
Weight
90
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT, IF=200A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
5
mA
V
IRRM, IDRM
VT, VF
VTO
1.57
0.85
3.7
V
m
rT
VD=6V;
TVJ=25oC
TVJ=-40oC
1.5
1.6
V
VGT
IGT
VD=6V;
TVJ=25oC
100
200
mA
TVJ=-40oC
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=10us; VD=6V
IG=0.45A; diG/dt=0.45A/us
TVJ=25oC; VD=6V; RGK=
TVJ=25oC; VD=1/2VDRM
IG=0.45A; diG/dt=0.45A/us
IL
IH
450
200
2
mA
mA
us
tgd
TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
typ.
150
us
tq
TVJ=TVJM; IT, IF=50A; -di/dt=3A/us
100
24
uC
A
QS
IRM
per thyristor/diode; DC current
per module
0.45
0.225
K/W
K/W
RthJC
RthJK
per thyristor/diode; DC current
per module
0.65
0.325
Creeping distance on surface
Strike distance through air
12.7
9.6
50
mm
mm
m/s2
dS
dA
a
Maximum allowable acceleration
FEATURES
* International standard package
APPLICATIONS
* DC motor control
ADVANTAGES
* Space and weight savings
* Copper
* Softstart AC motor controller
* Light, heat and temperature
control
* Simple mounting with two screws
* Improved temperature and power
cycling
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* Reduced protection circuits
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
10
1: IGT, TVJ = 125 C
2: IGT, TVJ
= 25 C
V
3: IGT, TVJ = -40 C
VG
3
2
6
1
5
1
4
4: PGAV = 0.5 W
5: PGM 5 W
6: PGM = 10 W
=
IGD, TVJ = 125 C
0.1
100
101
102
103
IG
104
mA
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000
TVJ = 25 C
s
tgd
typ.
Limit
100
10
3 x STD/SDT60
1
10
mA
100
1000
IG
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT60
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STD/SDT60
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
STD/SDT60
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.45
0.47
0.49
0.505
0.52
180oC
120oC
60oC
30oC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.014
0.026
0.41
0.015
0.0095
0.175
Fig. 9 Transient thermal impedance
junction toheatsink(perthyristor
or diode)
STD/SDT60
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
0.65
0.67
0.69
0.705
0.72
180oC
120oC
60oC
30oC
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.014
0.026
0.41
0.2
0.015
0.0095
0.175
0.67
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