STD60N3LH5 [STMICROELECTRONICS]
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET; N沟道30 V ， 0.0072 Ω ， 48采用DPAK ， IPAK ， TO- 220的STripFET ™ V功率MOSFET
| 型号： | STD60N3LH5 |
| 厂家： | 
ST |
| 描述： | N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET |
| 文件： | 总16页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD60N3LH5
STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
VDSS
RDS(on) max
ID
STD60N3LH5
STP60N3LH5
STU60N3LH5
30 V
30 V
30 V
0.008 Ω
0.0084 Ω
0.0084 Ω
48 A
48 A
48 A
3
2
1
TO-220
■ R
* Q industry benchmark
g
DS(on)
3
■ Extremely low on-resistance R
3
DS(on)
2
1
1
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
DPAK
IPAK
Application
Figure 1.
Internal schematic diagram
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1.
Device summary
Order codes
Marking
Package
DPAK
Packaging
STD60N3LH5
STP60N3LH5
STU60N3LH5
60N3LH5
60N3LH5
60N3LH5
Tape and reel
Tube
TO-220
IPAK
Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
16
Contents
STD60N3LH5, STP60N3LH5, STU60N3LH5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VDS
VGS
Drain-source voltage (VGS=0)
Drain-source voltage (VGS = 0) @ TJMAX
Gate-Source voltage
30
35
V
V
22
V
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
48
A
ID
42.8
192
60
A
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
0.4
160
W/°C
mJ
(3)
EAS
Single pulse avalanche energy
Tj
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25 °C, Id = 24 A, Vdd = 12 V
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-case max
2.5
100
275
°C/W
°C/W
°C
Tj
Maximum lead temperature for soldering purpose
Doc ID 14079 Rev 3
3/16
Electrical characteristics
STD60N3LH5, STP60N3LH5, STU60N3LH5
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4.
Symbol
Static
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
Voltage
V(BR)DSS
ID = 250 µA, VGS= 0
30
V
VDS = 30 V
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = 30 V,Tc = 125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
22 V
±100
nA
V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250 µA
GS= 10 V, ID= 24 A
SMD version
GS= 10 V, ID= 24 A
1
1.8
3
V
0.0072 0.008
0.0076 0.0084
0.0088 0.011
0.0092 0.0114
Ω
Ω
Ω
Ω
V
Static drain-source on
resistance
RDS(on)
VGS= 5 V, ID= 24 A
SMD version
VGS= 5 V, ID= 24 A
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
1350
265
32
pF
VDS =25 V, f=1 MHz,
VGS=0
-
-
-
-
pF
pF
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15 V, ID = 48 A
VGS =5 V
8.8
4.7
2.2
nC
nC
nC
-
-
(Figure 14)
Pre Vth gate-to-source
charge
Qgs1
Qgs2
VDD=15 V, ID = 48 A
2.2
2.5
nC
nC
VGS =5 V
Post Vth gate-to-source
charge
(Figure 19)
f=1 MHz gate bias
Bias= 0 test signal
level=20 mV
RG
Gate input resistance
-
1.1
-
Ω
open drain
4/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Electrical characteristics
Table 6.
Symbol
Switching on/off (resistive load)
Parameter
Test conditions
Min. Typ.
Max. Unit
VDD=10 V, ID= 24 A,
td(on)
tr
Turn-on delay time
6
ns
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
-
-
Rise time
33
ns
VDD=10 V, ID= 24 A,
td(off)
tf
Turn-off delay time
Fall time
19
ns
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
-
-
4.2
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
48
A
A
-
-
ISDM
Source-drain current (pulsed)(1)
192
VSD
Forward on voltage
ISD=24 A, VGS=0
ISD=48 A,
1.1
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
25
18.5
1.5
ns
nC
A
Qrr
-
di/dt =100 A/µs,
VDD=20 V, (Figure 15)
IRRM
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Doc ID 14079 Rev 3
5/16
Electrical characteristics
STD60N3LH5, STP60N3LH5, STU60N3LH5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM03360v1
ID
(A)
70
60
50
40
30
20
10
0
0
1
3
VGS(V)
2
Figure 6.
Normalized B
vs temperature Figure 7.
Static drain-source on resistance
VDSS
6/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
Doc ID 14079 Rev 3
7/16
Test circuits
STD60N3LH5, STP60N3LH5, STU60N3LH5
Figure 14. Gate charge test circuit
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Figure 19. Gate charge waveform
Test circuits
Doc ID 14079 Rev 3
9/16
Package mechanical data
STD60N3LH5, STP60N3LH5, STU60N3LH5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Package mechanical data
TO-251 (IPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.64
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
A
A1
b
b2
b4
c
5.20
0.45
0.48
6.00
6.40
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
(L1)
L2
V1
1.20
0.80
10 o
0068771_H
Doc ID 14079 Rev 3
11/16
Package mechanical data
STD60N3LH5, STP60N3LH5, STU60N3LH5
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
12/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
Doc ID 14079 Rev 3
13/16
Packaging mechanical data
STD60N3LH5, STP60N3LH5, STU60N3LH5
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
14/16
Doc ID 14079 Rev 3
STD60N3LH5, STP60N3LH5, STU60N3LH5
Revision history
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
19-Oct-2007
23-Sep-2008
1
2
First release
VGS value has been changed on Table 2 and Table 5
– Inserted typical adn maximum value in VGS(th) parameter
– Figure 5: Transfer characteristics has been updated
– Added device in TO-220
20-Apr-2009
3
Doc ID 14079 Rev 3
15/16
STD60N3LH5, STP60N3LH5, STU60N3LH5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
16/16
Doc ID 14079 Rev 3
相关型号：
STD60N3LH5_09
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
STMICROELECTR
STD60N55F3
N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET
STMICROELECTR
STD60N55F3TRL
80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明