STD60N55 [STMICROELECTRONICS]
N-channel 55V - 8.0mз - 65A - DPAK - IPAK MDmesh⑩ low voltage Power MOSFET; N沟道55V - 8.0mз - 65A - DPAK - IPAK MDmesh⑩低电压功率MOSFET
| 型号： | STD60N55 |
| 厂家： | 
ST |
| 描述： | N-channel 55V - 8.0mз - 65A - DPAK - IPAK MDmesh⑩ low voltage Power MOSFET |
| 文件： | 总12页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD60N55-1
STD60N55
N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK
MDmesh™ low voltage Power MOSFET
PRELIMINARY DATA
General features
Type
VDSS
RDS(on)
ID
Pw
STD60N55
55V
55V
<10.5mΩ
<10.5mΩ
65A 110W
65A 110W
STD60N55-1
3
3
■ Standard threshold drive
■ 100% avalanche tested
2
1
1
DPAK
IPAK
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronic unique “Single Feature Size™“
strip-based process with less critical aligment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STD60N55
D60N55
DPAK
IPAK
Tape & reel
Tube
STD60N55-1
D60N55-1
July 2006
Rev1
1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
12
Contents
STD60N55 - STD60N55-1
Contents
1
2
3
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/12
STD60N55 - STD60N55-1
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
55
Unit
V
VDS
VGS
ID
Drain-source voltage (VGS=0)
Gate-source voltage
20
V
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
65
A
ID
46
A
(1)
Drain current (pulsed)
260
A
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
110
0.73
8
W
W/°C
V/ns
(2)
Peak diode recovery voltage slope
dv/dt
(3)
Single pulse avalanche energy
390
mJ
EAS
Tj
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Pulse width limited by safe operating area
2. ISD <65A, di/dt <300A/µs, VDD< V(BR)DSS. Tj < Tjmax
3. Starting Tj=25°C, Id=32A, Vdd=40V
Table 2.
Thermal resistance
Parameter
Symbol
Value
1.36
50
Unit
°C/W
°C/W
°C
Rthj-case Thermal resistance junction-case max
Rthj-pcb (1)
Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering purpose
275
1. When mounted on FR-4 board of 1inch², 2oz Cu
3/12
Electrical characteristics
STD60N55 - STD60N55-1
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250µA, VGS= 0
55
V
V
DS = Max rating,
10
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating,Tc = 125°C
100
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
±200 nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250µA
VGS= 10V, ID= 32A
Gate threshold voltage
2
4
V
Static drain-source on
resistance
8.0 10.5 mΩ
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
(1)
VDS =25V, ID=32A
Forward transconductance
50
S
gfs
Ciss
Coss
Crss
Input capacitance
2200
500
25
pF
pF
pF
VDS = 25V, f = 1MHz, VGS=0
VDD = 27V, ID = 65A
Output capacitance
Reverse transfer capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
33.5
12.5
9.5
45
nC
nC
nC
VGS =10V
(see Figure 2)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/12
STD60N55 - STD60N55-1
Electrical characteristics
Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 3)
td(on)
tr
Turn-on delay time
20
50
ns
ns
Rise time
V
DD = 27V, ID = 32A,
td(off)
tf
Turn-off delay time
Fall time
35
ns
ns
RG = 4.7Ω, VGS = 10V
11.5
(see Figure 3)
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
65
A
A
(1)
Source-drain current (pulsed)
260
ISDM
VSD
ISD = 65A, VGS = 0
Forward on voltage
1.5
V
trr
ISD = 65A, VDD = 30V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
47
87
ns
nC
A
Qrr
di/dt = 100A/µs,
3.7
IRRM
Tj = 150°C(see Figure 5)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/12
Test circuit
STD60N55 - STD60N55-1
3
Test circuit
Figure 1. Unclamped inductive load test
circuit
Figure 2. Unclamped inductive wafeform
Figure 3. Switching times test circuit for
resistive load
Figure 4. Gate charge test circuit
Figure 5.
Test circuit for inductive load
Figure 6. Switching time waveform
switching and diode recovery times
6/12
STD60N55 - STD60N55-1
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/12
Package mechanical data
STD60N55 - STD60N55-1
DPAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
8/12
STD60N55 - STD60N55-1
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
TYP.
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
9/12
Packaging mechanical data
STD60N55 - STD60N55-1
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
10/12
STD60N55 - STD60N55-1
Revision history
6
Revision history
Table 7.
Date
17-Jul-2005
Revision history
Revision
Changes
1
First release
11/12
STD60N55 - STD60N55-1
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12/12
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