STD60N55F3 [STMICROELECTRONICS]
N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET; N沟道55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO- 220 / FP的STripFET TM功率MOSFET
| 型号： | STD60N55F3 |
| 厂家： | 
ST |
| 描述： | N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET |
| 文件： | 总19页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB60N55F3 - STD60N55F3 - STF60N55F3
STP60N55F3 - STU60N55F3
N-channel 55V - 6.5mΩ - 80A - DPAK - IPAK - D2PAK - TO-220/FP
STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
Pw
3
2
3
1
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
55V
55V
55V
55V
55V
<8.5mΩ
<8.5mΩ
<8.5mΩ
<8.5mΩ
<8.5mΩ
80A 110W
80A 110W
2
1
IPAK
TO-220FP
42A
30W
3
80A 110W
80A 110W
1
DPAK
3
1
■ Standard threshold drive
■ 100% avalanche tested
3
2
1
D²PAK
TO-220
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
Internal schematic diagram
STMicroelectronics' unique “Single Feature
Size™“ strip-based process, which has
decreased the critical alignment steps, offering
remarkable manufacturing reproducibility. The
outcome is a transistor with extremely high
packing density for low onresistance, rugged
avalanche characteristics and low gate charge.
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STB60N55F3
STD60N55F3
STF60N55F3
STP60N55F3
STU60N55F3
60N55F3
60N55F3
60N55F3
60N55F3
60N55F3
D²PAK
DPAK
Tape & reel
Tape & reel
Tube
TO-220FP
TO-220
IPAK
Tube
Tube
March 2007
Rev3
1/19
www.st.com
19
Contents
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK/D²PAK
TO-220/IPAK
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS=0)
55
V
V
A
A
A
Gate-source voltage
20
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
80
56
42
30
ID
(1)
Drain current (pulsed)
320
168
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
110
30
W
0.73
0.2
W/°C
V/ns
dv/dt (2)
Peak diode recovery voltage slope
11
(3)
Single pulse avalanche energy
390
mJ
V
EAS
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
VISO
--
2500
Tj
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Pulse width limited by safe operating area
2. ISD < 80A, di/dt < 300A/µs, VDD < V(BR)DSS. Tj < Tjmax
3. Starting Tj=25°C, Id=32A, Vdd=25V
Table 2.
Thermal resistance
Value
DPAK IPAK D²PAK TO-220 TO-220FP
Symbol
Parameter
Unit
Thermal resistance junction-
case max
Rthj-case
1.36
35
5
°C/W
°C/W
°C/W
°C
Thermal resistance junction-
pcb max
Rthj-pcb (1)
Rthj-a
Tl
50
--
--
--
--
Thermal resistance junction-
ambient max
100
275
--
--
62.5
300
Maximum lead temperature for
soldering purpose
--
1. When mounted on FR-4 board of 1inch², 2oz Cu
3/19
Electrical characteristics STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250µA, VGS= 0
55
V
V
DS = Max rating,
10
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating,Tc = 125°C
100
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20V
±200 nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250µA
VGS= 10V, ID= 32A
Gate threshold voltage
2
4
V
Static drain-source on
resistance
6.5
8.5
mΩ
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
(1)
VDS =25V, ID=32A
Forward transconductance
50
S
gfs
Ciss
Coss
Crss
Input capacitance
2200
500
25
pF
pF
pF
VDS = 25V, f = 1MHz, VGS=0
VDD = 27V, ID = 65A
Output capacitance
Reverse transfer capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
33.5
12.5
9.5
45
nC
nC
nC
VGS =10V
(see Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics
Table 5.
Switching on/off (inductive load)
Parameter Test conditions
Symbol
Min. Typ.
Max. Unit
VDD = 27V, ID = 32A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
td(on)
tr
Turn-on delay time
20
50
ns
ns
Rise time
V
DD = 27V, ID = 32A,
td(off)
tf
Turn-off delay time
Fall time
35
ns
ns
RG = 4.7Ω, VGS = 10V
11.5
(see Figure 17)
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Packages
Min. Typ. Max. Unit
ISD
DPAK-D2PAK-
I2PAK-TO-220
Source-drain current
80
A
A
(1)
Source-drain current (pulsed)
320
ISDM
ISD
Source-drain current
42
A
A
TO-220FP
(1)
Source-drain current (pulsed)
168
ISDM
VSD
ISD = 65A, VGS = 0
Forward on voltage
1.5
V
ISD = 65A, VDD = 30V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
47
87
ns
nC
A
di/dt = 100A/µs,
Tj = 150°C
Qrr
3.7
IRRM
(see Figure 16)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/19
Electrical characteristics STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220
D²PAK / IPAK / DPAK
Figure 2.
Figure 4.
Figure 6.
Thermal impedance for TO-220
D²PAK / IPAK / DPAK
Figure 3.
Figure 5.
6/19
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Output characteristics
Transfer characteristics
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Electrical characteristics
Figure 7.
Normalized BV
vs temperature Figure 8.
Static drain-source on resistance
DSS
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage Figure 12. Normalized on resistance vs
vs temperature temperature
7/19
Electrical characteristics STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
Figure 13. Source-drain diode forward
characteristics
8/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
Test circuit
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
9/19
Package mechanical dataSTB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data
DPAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
MIN.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
11/19
Package mechanical dataSTB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
TO-251 (IPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.027
0.025
0.204
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
A
A1
A3
B
0.9
1.1
0.7
1.3
0.64
5.2
0.9
B2
B3
B5
B6
C
5.4
0.85
0.3
0.012
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
C2
D
E
6.4
4.4
15.9
9
G
H
L
L1
L2
0.8
0.8
0.031
H
L
D
L2
L1
0068771-E
12/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
13/19
Package mechanical dataSTB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
TO-220 mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
θP
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
14/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3Package mechanical data
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1
2 3
L5
L2
L4
15/19
Packaging mechanical data
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 -
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
16/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3 Packagingmechanical
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
17/19
Revision history
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
6
Revision history
Table 7.
Date
Revision history
Revision
Changes
09-Feb-2007
22-Feb-2007
07-Mar-2007
1
2
3
First release
Description has been updated
The Figure 1, Figure 3, Figure 8 has been changed
18/19
STB60N55F3 - STD60N55F3 - STF60N55F3 - STP60N55F3 - STU60N55F3
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19/19
相关型号：
STD60N55F3TRL
80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3
STMICROELECTR
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