STD60N10 [STMICROELECTRONICS]
60A, 100V, 0.0195ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3;
| 型号： | STD60N10 |
| 厂家： | 
ST |
| 描述： | 60A, 100V, 0.0195ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD60N10
STP70N10
N-channel 100 V - 0.016 Ω - 60 A TO-220 / DPAK
low RDS(on) Power MOSFET
Preliminary Data
Features
Type
VDSS
RDS(on)max
ID
STD60N10
STP70N10
100 V
100 V
<0.0195 Ω
<0.0195 Ω
60 A
65 A
3
■ Exceptional dv/dt capability
■ Extremely low on-resistance R
■ 100% avalanche tested
3
1
2
1
DS(on)
DPAK
TO-220
Application
■ Switching applications
Figure 1.
Internal schematic diagram
Description
This Power MOSFET is designed to minimize the
, making it suitable for the most
R
DS(on)
applications where high power density is required.
Table 1.
Device summary
Order codes
Marking
Package
TO-220
DPAK
Packaging
STP70N10
STD60N10
70N10
60N10
Tube
Tape and reel
February 2008
Rev 2
1/12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
12
Contents
STP70N10 - STD60N10
Contents
1
2
3
4
5
6
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP70N10 - STD60N10
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
TO-220
DPAK
VDS
VGS
ID
Drain-source voltage (vgs = 0)
Gate- source voltage
100
20
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
65
46
60
43
A
A
ID
(1)
IDM
260
150
1
240
125
0.83
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
W/°C
V/ns
mJ
dv/dt(2) Peak diode recovery voltage slope
TBD
TBD
(3)
EAS
Single pulse avalanche energy
Storage temperature
Tstg
Tj
– 55 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 50 A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
3. Starting Tj= 25 °C, ID= 50 A, VDD=25 V
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220
DPAK
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
1
1.2
°C/W
°C/W
62.5
50 (1)
Maximum lead temperature for soldering
purpose
Tl
300
°C
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
3/12
Electrical characteristics
STP70N10 - STD60N10
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
100
V
Breakdown voltage
V
DS = max rating
1
µA
µA
Zero gate voltage
IDSS
Drain current (VGS = 0)
VDS = max rating,TC=125 °C
100
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20 V
100
4
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 30 A
2
Static drain-source on
resistance
RDS(on)
0.016 0.0195
Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
Ciss
Input capacitance
Output capacitance
5800
300
pF
pF
VDS = 25 V, f = 1 MHz,
Coss
VGS = 0
Reverse transfer
capacitance
Crss
190
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
80
20
25
nC
nC
nC
VDD = 80 V, ID = 60 A,
VGS = 10 V
(see Figure 3)
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
VDD = 50 V, ID = 30 A
RG = 4.7 Ω VGS = 10 V
(see Figure 2)
td(on)
tr
Turn-on delay time
Rise time
125
20
ns
ns
V
DD = 50 V, ID = 30 A,
td(off)
tf
Turn-off-delay time
Fall time
60
ns
ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
150
4/12
STP70N10 - STD60N10
Electrical characteristics
Min. Typ. Max Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
60
A
A
V
(1)
ISDM
Source-drain current (pulsed)
Forward on voltage
240
TBD
(2)
VSD
ISD = 60 A, VGS = 0
ISD = 60 A, VDD = 25 V
di/dt = 100 A/µs,
Tj = 150 °C
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
85
280
6.7
ns
nC
A
Qrr
IRRM
(see Figure 4)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
Test circuit
STP70N10 - STD60N10
3
Test circuit
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
switching and diode recovery times
Figure 5. Unclamped Inductive load test
circuit
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
6/12
STP70N10 - STD60N10
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
7/12
Package mechanical data
STP70N10 - STD60N10
TO-220 mechanical data
mm
inch
Dim
Min
Typ
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.49
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
8/12
STP70N10 - STD60N10
Package mechanical data
DPAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
9/12
Packaging mechanical data
STP70N10 - STD60N10
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
10/12
STP70N10 - STD60N10
Revision history
6
Revision history
Table 8.
Date
Document revision history
Revision
Changes
02-Oct-2007
15-Feb-2008
1
2
First release
Inserted new data on Table 4, Table 5 and Table 6
11/12
STP70N10 - STD60N10
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