SKM400GAR12T4_0906 [SEMIKRON]

Fast IGBT4 Modules; 快IGBT4模块
SKM400GAR12T4_0906
型号: SKM400GAR12T4_0906
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Fast IGBT4 Modules
快IGBT4模块

双极性晶体管
文件: 总5页 (文件大小:353K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKM400GAR12T4  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
1200  
618  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
IC  
Tj = 175 °C  
475  
ICnom  
400  
ICRM  
ICRM = 3xICnom  
1200  
-20 ... 20  
VGES  
SEMITRANS®3  
VCC = 800 V  
VGE 15 V  
VCES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Fast IGBT4 Modules  
SKM400GAR12T4  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
440  
329  
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
400  
A
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
1200  
A
Features  
• VCE(sat) with positive temperature  
coefficient  
1980  
A
-40 ... 175  
°C  
• High short circuit capability, self  
limiting to 6 x Icnom  
Freewheeling diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
440  
329  
A
A
• Fast & soft inverse CAL diodes  
• Large clearance (10 mm) and  
creepage distances (20 mm)  
• Isolated copper baseplate using DBC  
Technology (Direct Copper Bonding)  
Tj = 175 °C  
IFnom  
400  
A
IFRM  
IFSM  
Tj  
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
1200  
A
1980  
A
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
Typical Applications  
• DC/DC – converter  
• Brake chopper  
• Switched reluctance motor  
• DC – motor  
500  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Characteristics  
Remarks  
• Case temperature limited to  
Tc = 125°C max, recomm.  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
IC = 400 A  
VCE(sat)  
Tj = 25 °C  
1.8  
2.2  
2.05  
2.4  
V
V
T
op = -40 ... +150°C, product  
V
GE = 15 V  
Tj = 150 °C  
rel. results valid for Tj = 150°  
chiplevel  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
2.5  
3.8  
5.8  
0.1  
0.9  
0.8  
2.9  
4.0  
6.5  
0.3  
V
V
mΩ  
mΩ  
V
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 15.2 mA  
Tj = 25 °C  
5
mA  
mA  
nF  
nF  
nF  
nC  
VGE = 0 V  
CE = 1200 V  
V
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
24.6  
1.62  
1.38  
2260  
1.9  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
RGint  
GAR  
© by SEMIKRON  
Rev. 2 – 16.06.2009  
1
SKM400GAR12T4  
Characteristics  
Symbol Conditions  
min.  
typ.  
220  
47  
max.  
Unit  
ns  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
td(on)  
tr  
VCC = 600 V  
IC = 400 A  
ns  
V
GE = ±15 V  
Eon  
td(off)  
tf  
33  
mJ  
ns  
R
R
G on = 1 Ω  
G off = 1 Ω  
505  
78  
ns  
di/dton = 9700 A/µs  
di/dtoff = 4300 A/µs  
Eoff  
Rth(j-c)  
42  
mJ  
K/W  
per IGBT  
0.072  
SEMITRANS®3  
Inverse diode  
IF = 400 A  
GE = 0 V  
Tj = 25 °C  
VF = VEC  
2.2  
2.52  
2.47  
V
V
V
Tj = 150 °C  
2.15  
chip  
Fast IGBT4 Modules  
SKM400GAR12T4  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VF0  
rF  
1.3  
0.9  
2.3  
3.1  
450  
68  
1.5  
1.1  
2.5  
3.4  
V
V
mΩ  
mΩ  
A
IF = 400 A  
di/dtoff = 8800 A/µs  
IRRM  
Qrr  
Features  
• VCE(sat) with positive temperature  
coefficient  
µC  
V
V
GE = ±15 V  
CC = 600 V  
Tj = 150 °C  
Err  
30.5  
mJ  
• High short circuit capability, self  
limiting to 6 x Icnom  
Rth(j-c)  
per diode  
0.14  
K/W  
Freewheeling diode  
IF = 400 A  
VF = VEC  
• Fast & soft inverse CAL diodes  
• Large clearance (10 mm) and  
creepage distances (20 mm)  
• Isolated copper baseplate using DBC  
Technology (Direct Copper Bonding)  
Tj = 25 °C  
2.2  
2.52  
2.47  
V
V
V
GE = 0 V  
Tj = 150 °C  
2.15  
chip  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VF0  
rF  
1.3  
0.9  
2.3  
3.1  
450  
68  
1.5  
1.1  
2.5  
3.4  
V
V
mΩ  
mΩ  
A
Typical Applications  
• DC/DC – converter  
• Brake chopper  
• Switched reluctance motor  
• DC – motor  
IF = 400 A  
di/dtoff = 8800 A/µs  
IRRM  
Qrr  
µC  
V
V
GE = ±15 V  
CC = 600 V  
Tj = 150 °C  
Err  
30.5  
mJ  
Rth(j-c)  
per Diode  
0.14  
20  
K/W  
Module  
LCE  
Remarks  
• Case temperature limited to  
Tc = 125°C max, recomm.  
15  
nH  
mΩ  
mΩ  
K/W  
Nm  
Nm  
Nm  
g
TC = 25 °C  
RCC'+EE'  
0.25  
0.5  
terminal-chip  
T
op = -40 ... +150°C, product  
TC = 125 °C  
rel. results valid for Tj = 150°  
Rth(c-s)  
Ms  
per module  
0.02  
0.038  
to heat sink M6  
3
5
5
to terminals M6  
Mt  
2.5  
w
325  
GAR  
2
Rev. 2 – 16.06.2009  
© by SEMIKRON  
SKM400GAR12T4  
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2: Rated current vs. temperature IC = f (TC)  
Fig. 4: Typ. turn-on /-off energy = f (RG)  
Fig. 6: Typ. gate charge characteristic  
Fig. 3: Typ. turn-on /-off energy = f (IC)  
Fig. 5: Typ. transfer characteristic  
© by SEMIKRON  
Rev. 2 – 16.06.2009  
3
SKM400GAR12T4  
Fig. 7: Typ. switching times vs. IC  
Fig. 8: Typ. switching times vs. gate resistor RG  
Fig. 9: Transient thermal impedance  
Fig. 10: CAL diode forward characteristic  
Fig. 11: CAL diode peak reverse recovery current  
Fig. 12: Typ. CAL diode peak reverse recovery charge  
4
Rev. 2 – 16.06.2009  
© by SEMIKRON  
SKM400GAR12T4  
Semitrans 3  
GAR  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied  
is made regarding delivery, performance or suitability.  
© by SEMIKRON  
Rev. 2 – 16.06.2009  
5

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