SKM400GB126D [SEMIKRON]
Trench IGBT Module; 沟道IGBT模块
| 型号： | SKM400GB126D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Module |
| 文件： | 总4页 (文件大小：657K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB126D
ꢋ ꢏ () *ꢕ ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢗꢊꢈꢅ ꢈꢘꢅꢍꢊꢚꢊꢅ%
Absolute Maximum Ratings
Symbol Conditions
ꢍ
Values
Units
IGBT
ꢔꢕꢖꢉ
+(,,
12, .33,0
!,,
ꢔ
$
#
#
ꢋꢍ ꢏ () ./,0 *ꢕ
ꢑꢘ ꢏ + ꢃꢈ
ꢕ
$
ꢕ45
ꢔ6ꢖꢉ
7 (,
ꢔ
ꢋꢙ8 .ꢋꢈꢑꢄ
0
ꢋ9'ꢖ4$ꢋ#9: ; ꢋꢈꢑꢄ
$ꢕ + ꢃꢊꢆ=
< 1, ===> +), .+()0
*ꢕ
ꢔꢊꢈꢂꢒ
1,,,
ꢔ
Inverse diode
TM
#
ꢋꢍ ꢏ () ./,0 *ꢕ
1,, .(2,0
!,,
$
$
SEMITRANS
3
?
#
ꢑꢘ ꢏ + ꢃꢈ
?45
#
ꢑꢘ ꢏ +, ꢃꢈ@ ꢈꢊꢆ=@ ꢋ8 ꢏ +), *ꢕ
$
?ꢉ5
Trench IGBT Module
ꢋ ꢏ () *ꢕ ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢗꢊꢈꢅ ꢈꢘꢅꢍꢊꢚꢊꢅ%
Characteristics
Symbol Conditions
IGBT
ꢍ
min.
typ.
max. Units
SKM 400GB126D
ꢔ6ꢖ.ꢑꢎ0
ꢔ6ꢖ ꢏ ꢔꢕꢖ #ꢕ ꢏ +( ꢃ$
)
) /
! )
, 1)
+ (
ꢔ
ꢃ$
ꢔ
#
ꢔ6ꢖ ꢏ , ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ ꢋ8 ꢏ () .+()0 *ꢕ
ꢋ8 ꢏ () .+()0 *ꢕ
, +)
ꢕꢖꢉ
ꢔꢕꢖ.ꢋ90
ꢌꢕꢖ
+ ., A0
( 3 .3 20
Preliminary Data
ꢔ6ꢖ ꢏ +) ꢔ ꢋ8 ꢏ () .+()0 *ꢕ
3 (
ꢃB
ꢔꢕꢖ.ꢈꢐꢑ0
#ꢕꢆꢂꢃ ꢏ 3,, $ ꢔ6ꢖ ꢏ +) ꢔ ꢍꢎꢊꢘ ꢒꢅꢙꢅꢒ
+ 2 .(0
( +)
ꢔ
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Dꢕꢖ
ꢇꢆ%ꢅꢌ ꢚꢂꢒꢒꢂꢗꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ
(3 +
+ A
ꢆ?
ꢆ?
ꢆ?
ꢆꢁ
Features
ꢔ6ꢖ ꢏ , ꢔꢕꢖ ꢏ () ꢔ ꢚ ꢏ + 5ꢁC
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
+ (
(,
ꢔ
ꢗꢊꢑꢎ ꢘꢂꢈꢊꢑꢊꢙꢅ ꢑꢅꢃꢘꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢈꢐꢑ
4ꢕꢕE>ꢖꢖE
ꢌꢅꢈ= ꢑꢅꢌꢃꢊꢆꢐꢒ<ꢍꢎꢊꢘ ꢋꢍꢏ () .+()0 *ꢕ
, 3) ., )0
ꢃB
ꢍꢂꢅꢚꢚꢊꢍꢊꢅꢆꢑ
ꢑ%.ꢂꢆ0
ꢑꢌ
ꢑ%.ꢂꢚꢚ0
ꢑꢚ
ꢔꢕꢕ ꢏ !,, ꢔ #ꢕꢆꢂꢃ ꢏ 3,, $
46ꢂꢆ ꢏ 46ꢂꢚꢚ ꢏ ( B ꢋ8 ꢏ +() *ꢕ
ꢔ6ꢖ ꢏ 7 +) ꢔ
33,
),
ꢆꢈ
ꢆꢈ
ꢆꢈ
ꢆꢈ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢘꢐꢛꢊꢒꢊꢑꢓ ꢈꢅꢒꢚ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ ! " #
ꢀ
ꢍ
!),
++,
Typical Applications
ꢖꢂꢆ .ꢖꢂꢚꢚ
0
(A .1/0
ꢃF
$ꢕ ꢊꢆꢙꢅꢌꢑꢅꢌ %ꢌꢊꢙꢅꢈ
&'ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢗꢅꢒ%ꢅꢌꢈ
ꢀ
ꢀ
ꢀ
Inverse diode
ꢔ? ꢏ ꢔꢖꢕ
#?ꢆꢂꢃ ꢏ 3,, $@ ꢔ6ꢖ ꢏ , ꢔ@ ꢋ8 ꢏ () .+()0
+ ! .+ !0
+ / .+ /0
ꢔ
*ꢕ
ꢔ.ꢋ90
ꢌꢋ
ꢋ8 ꢏ () .+()0 *ꢕ
ꢋ8 ꢏ () .+()0 *ꢕ
+ ., /0
( .( 20
3A,
+ +
( 3
ꢔ
ꢃB
$
#
#?ꢆꢂꢃ ꢏ 3,, $@ ꢋ8 ꢏ +() . 0 *ꢕ
445
Gꢌꢌ
ꢖꢌꢌ
%ꢊH%ꢑ ꢏ !3,, $HIꢈ
22
Iꢕ
ꢔ6ꢖ ꢏ , ꢔ
3(
ꢃF
Thermal characteristics
4ꢑꢎ.8<ꢍ0
ꢘꢅꢌ #6Jꢋ
, ,/
, +/
KHL
KHL
4ꢑꢎ.8<ꢍ0M
ꢘꢅꢌ #ꢆꢙꢅꢌꢈꢅ Mꢊꢂ%ꢅ
4ꢑꢎ.ꢍ<ꢈ0
ꢘꢅꢌ ꢃꢂ%ꢇꢒꢅ
, ,3/
KHL
Mechanical data
5ꢈ
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆN 5!
3
)
)
:ꢃ
:ꢃ
5ꢑ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 5!
( )
ꢗ
3()
ꢄ
GB
1
14-06-2005 SEN
© by SEMIKRON
SKM 400GB126D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
14-06-2005 SEN
© by SEMIKRON
SKM 400GB126D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
14-06-2005 SEN
© by SEMIKRON
SKM 400GB126D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
Dimensions in mm
File no. E 63 532
6J
ꢕꢐꢈꢅ M )!
ꢕꢐꢈꢅ M )!
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
14-06-2005 SEN
© by SEMIKRON
相关型号：
©2020 ICPDF网 联系我们和版权申明