SKM400GB126D [SEMIKRON]

Trench IGBT Module; 沟道IGBT模块
SKM400GB126D
型号: SKM400GB126D
厂家: SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述:

Trench IGBT Module
沟道IGBT模块

双极性晶体管
文件: 总4页 (文件大小:657K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SKM 400GB126D  
  () *ꢕ  ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢗꢊꢈꢅ ꢈꢘꢅꢍꢊꢚꢊꢅ%  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Units  
IGBT  
ꢕꢖꢉ  
+(,,  
12, .33,0  
!,,  
$
#
#
  () ./,0 *ꢕ  
  + ꢃꢈ  
$
ꢕ45  
6ꢖꢉ  
7 (,  
ꢙ8  .ꢋꢈꢑꢄ  
0
9'ꢖ4$ꢋ#9: ; ꢈꢑꢄ  
$ꢕ  + ꢃꢊꢆ=  
< 1, ===> +), .+()0  
*ꢕ  
ꢊꢈꢂꢒ  
1,,,  
Inverse diode  
TM  
#
  () ./,0 *ꢕ  
1,, .(2,0  
!,,  
$
$
SEMITRANS  
3
?
#
  + ꢃꢈ  
?45  
#
  +, ꢃꢈ@ ꢈꢊꢆ=@ 8  +), *ꢕ  
$
?ꢉ5  
Trench IGBT Module  
  () *ꢕ  ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢗꢊꢈꢅ ꢈꢘꢅꢍꢊꢚꢊꢅ%  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max. Units  
SKM 400GB126D  
6ꢖ.ꢑꢎ0  
6ꢖ  ꢕꢖ  #  +( ꢃ$  
)
) /  
! )  
, 1)  
+ (  
ꢃ$  
#
6ꢖ  ,  ꢕꢖ  ꢕꢖꢉ  8  () .+()0 *ꢕ  
8  () .+()0 *ꢕ  
, +)  
ꢕꢖꢉ  
ꢕꢖ.ꢋ90  
ꢕꢖ  
+ ., A0  
( 3 .3 20  
Preliminary Data  
6ꢖ  +)  8  () .+()0 *ꢕ  
3 (  
ꢃB  
ꢕꢖ.ꢈꢐꢑ0  
#ꢕꢆꢂꢃ  3,, $  6ꢖ  +)  ꢍꢎꢊꢘ ꢒꢅꢙꢅꢒ  
+ 2 .(0  
( +)  
ꢊꢅꢈ  
ꢂꢅꢈ  
ꢌꢅꢈ  
Dꢕꢖ  
ꢇꢆ%ꢅꢌ ꢚꢂꢒꢒꢂꢗꢊꢆꢄ ꢍꢂꢆ%ꢊꢑꢊꢂꢆꢈ  
(3 +  
+ A  
ꢆ?  
ꢆ?  
ꢆ?  
ꢆꢁ  
Features  
6ꢖ  ,  ꢕꢖ  ()    + 5ꢁC  
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ  
ꢋꢌꢅꢆꢍꢎ  ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ  
+ (  
(,  
ꢗꢊꢑꢎ ꢘꢂꢈꢊꢑꢊꢙꢅ ꢑꢅꢃꢘꢅꢌꢐꢑꢇꢌꢅ  
ꢕꢖꢈꢐꢑ  
4ꢕꢕE>ꢖꢖE  
ꢌꢅꢈ=  ꢑꢅꢌꢃꢊꢆꢐꢒ<ꢍꢎꢊꢘ  () .+()0 *ꢕ  
, 3) ., )0  
ꢃB  
ꢍꢂꢅꢚꢚꢊꢍꢊꢅꢆꢑ  
%.ꢂꢆ0  
 
%.ꢂꢚꢚ0  
 
ꢕꢕ  !,,  #ꢕꢆꢂꢃ  3,, $  
46ꢂꢆ  46ꢂꢚꢚ  ( B  8  +() *ꢕ  
6ꢖ  7 +)   
33,  
),  
ꢆꢈ  
ꢆꢈ  
ꢆꢈ  
ꢆꢈ  
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢘꢐꢛꢊꢒꢊꢑꢓ  ꢈꢅꢒꢚ  
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ ! " #  
!),  
++,  
Typical Applications  
ꢂꢆ .ꢖꢂꢚꢚ  
0
(A .1/0  
ꢃF  
$ꢕ ꢊꢆꢙꢅꢌꢑꢅꢌ %ꢌꢊꢙꢅꢈ  
&'ꢉ  
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢗꢅꢒ%ꢅꢌꢈ  
Inverse diode  
?  ꢖꢕ  
#?ꢆꢂꢃ  3,, $@ 6ꢖ  , ꢔ@ 8  () .+()0  
+ ! .+ !0  
+ / .+ /0  
*ꢕ  
.ꢋ90  
 
8  () .+()0 *ꢕ  
8  () .+()0 *ꢕ  
+ ., /0  
( .( 20  
3A,  
+ +  
( 3  
ꢃB  
$
#
#?ꢆꢂꢃ  3,, $@ 8  +() . 0 *ꢕ  
445  
Gꢌꢌ  
ꢌꢌ  
%ꢊH%ꢑ  !3,, $HIꢈ  
22  
Iꢕ  
6ꢖ  ,   
3(  
ꢃF  
Thermal characteristics  
4ꢑꢎ.8<ꢍ0  
ꢘꢅꢌ #6Jꢋ  
, ,/  
, +/  
KHL  
KHL  
4ꢑꢎ.8<ꢍ0M  
ꢘꢅꢌ #ꢆꢙꢅꢌꢈꢅ Mꢊꢂ%ꢅ  
4ꢑꢎ.ꢍ<ꢈ0  
ꢘꢅꢌ ꢃꢂ%ꢇꢒꢅ  
, ,3/  
KHL  
Mechanical data  
5  
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆN 5!  
3
)
)
:ꢃ  
:ꢃ  
5  
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 5!  
( )  
3()  
GB  
1
14-06-2005 SEN  
© by SEMIKRON  
SKM 400GB126D  
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2 Rated current vs. temperature IC = f (TC)  
Fig. 4 Typ. turn-on /-off energy = f (RG)  
Fig. 6 Typ. gate charge characteristic  
Fig. 3 Typ. turn-on /-off energy = f (IC)  
Fig. 5 Typ. transfer characteristic  
2
14-06-2005 SEN  
© by SEMIKRON  
SKM 400GB126D  
Fig. 7 Typ. switching times vs. IC  
Fig. 8 Typ. switching times vs. gate resistor RG  
Fig. 9 Transient thermal impedance of IGBT  
Zthp(j-c) = f (tp); D = tp/tc = tp*f  
Fig. 10 Transient thermal impedance of FWD  
Zthp(j-c) = f (tp); D = tp/tc = tp*f  
Fig. 11 CAL diode forward characteristic  
Fig. 12 Typ. CAL diode peak reverse recovery current  
3
14-06-2005 SEN  
© by SEMIKRON  
SKM 400GB126D  
Fig. 13 Typ. CAL diode recovered charge  
UL Recognized  
Dimensions in mm  
File no. E 63 532  
6J  
ꢕꢐꢈꢅ M )!  
ꢕꢐꢈꢅ M )!  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.  
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee  
expressed or implied is made regarding delivery, performance or suitability.  
4
14-06-2005 SEN  
© by SEMIKRON  

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