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SKM400GB12E4_10 [SEMIKRON]

IGBT4 Modules; IGBT4模块
SKM400GB12E4_10
型号： SKM400GB12E4_10
厂家： SEMIKRON INTERNATIONAL    SEMIKRON INTERNATIONAL
描述：

IGBT4 Modules
IGBT4模块

双极性晶体管
文件： 总5页 (文件大小：476K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SKM400GB12E4  
Absolute Maximum Ratings  
Symbol Conditions  
IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
616  
474  
400  
1200  
-20 ... 20  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
VCC = 800 V  
SEMITRANS® 3  
IGBT4 Modules  
SKM400GB12E4  
Features  
V
V
GE ≤ 15 V  
CES ≤ 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
440  
329  
400  
1200  
1980  
A
A
A
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
• IGBT4 = 4. Generation (Trench)IGBT  
• VCEsat with positive temperature  
coefficient  
-40 ... 175  
°C  
Module  
It(RMS)  
Tstg  
• High short circuit capability, self limiting  
to 6 x ICNOM  
80 °C  
500  
-40 ... 125  
4000  
A
°C  
V
• Soft switching 4. Generation CAL diode  
(CAL4)  
Visol  
AC sinus 50Hz, t = 1 min  
• UL recognized, file no. E63532  
Characteristics  
Symbol Conditions  
IGBT  
Typical Applications*  
min.  
typ.  
max.  
Unit  
• AC inverter drives  
• UPS  
• Electronic welders at fsw up to 20 kHz  
IC = 400 A  
Tj = 25 °C  
VCE(sat)  
1.80  
2.20  
2.05  
2.40  
V
V
V
GE = 15 V  
Tj = 150 °C  
Remarks  
chiplevel  
• Case temperature limited to  
Tc = 125°C max, recomm.  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
2.50  
3.75  
5.8  
0.9  
0.8  
2.88  
4.00  
6.5  
V
V
m  
m  
V
mA  
mA  
nF  
nF  
nF  
nC  
T
op = -40 ... +150°C, product  
rel. results valid for Tj = 150°  
VGE = 15 V  
VGE(th)  
ICES  
VGE=VCE, IC = 15.2 mA  
Tj = 25 °C  
V
5
0.1  
0.3  
VGE = 0 V  
CE = 1200 V  
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
24.6  
1.62  
1.38  
2260  
1.9  
242  
47  
33  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
I
C = 400 A  
ns  
mJ  
ns  
V
GE = ±15 V  
R
R
G on = 1   
G off = 1   
580  
101  
di/dton = 9700 A/µs  
di/dtoff = 4300 A/µs  
ns  
Tj = 150 °C  
Eoff  
56  
mJ  
Rth(j-c)  
per IGBT  
0.072  
K/W  
GB  
© by SEMIKRON  
Rev. 3 – 29.10.2010  
1
SKM400GB12E4  
Characteristics  
Symbol Conditions  
Inverse diode  
min.  
typ.  
max.  
Unit  
IF = 400 A  
Tj = 25 °C  
VF = VEC  
2.20  
2.15  
2.52  
2.47  
V
V
V
GE = 0 V  
Tj = 150 °C  
chip  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
VF0  
rF  
1.3  
0.9  
2.3  
3.1  
450  
68  
1.5  
1.1  
2.5  
3.4  
V
V
m  
m  
A
SEMITRANS® 3  
IGBT4 Modules  
SKM400GB12E4  
Features  
IF = 400 A  
IRRM  
Qrr  
di/dtoff = 8800 A/µs  
µC  
V
V
GE = ±15 V  
CC = 600 V  
Tj = 150 °C  
Err  
30.5  
mJ  
Rth(j-c)  
per diode  
0.14  
20  
K/W  
Module  
LCE  
RCC'+EE'  
15  
0.25  
0.5  
nH  
m  
m  
K/W  
Nm  
Nm  
Nm  
g
TC = 25 °C  
terminal-chip  
T
C = 125 °C  
Rth(c-s)  
Ms  
Mt  
per module  
to heat sink M6  
0.02  
0.038  
5
5
• IGBT4 = 4. Generation (Trench)IGBT  
• VCEsat with positive temperature  
coefficient  
3
2.5  
to terminals M6  
• High short circuit capability, self limiting  
to 6 x ICNOM  
w
325  
• Soft switching 4. Generation CAL diode  
(CAL4)  
• UL recognized, file no. E63532  
Typical Applications*  
• AC inverter drives  
• UPS  
• Electronic welders at fsw up to 20 kHz  
Remarks  
• Case temperature limited to  
Tc = 125°C max, recomm.  
T
op = -40 ... +150°C, product  
rel. results valid for Tj = 150°  
GB  
2
Rev. 3 – 29.10.2010  
© by SEMIKRON  
SKM400GB12E4  
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'  
Fig. 2: Rated current vs. temperature IC = f (TC)  
Fig. 4: Typ. turn-on /-off energy = f (RG)  
Fig. 6: Typ. gate charge characteristic  
Fig. 3: Typ. turn-on /-off energy = f (IC)  
Fig. 5: Typ. transfer characteristic  
© by SEMIKRON  
Rev. 3 – 29.10.2010  
3
SKM400GB12E4  
Fig. 7: Typ. switching times vs. IC  
Fig. 8: Typ. switching times vs. gate resistor RG  
Fig. 9: Transient thermal impedance  
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'  
Fig. 11: CAL diode peak reverse recovery current  
Fig. 12: Typ. CAL diode peak reverse recovery charge  
4
Rev. 3 – 29.10.2010  
© by SEMIKRON  
SKM400GB12E4  
SEMITRANS 3  
GB  
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX  
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested  
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is  
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.  
© by SEMIKRON  
Rev. 3 – 29.10.2010  
5

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