SKM400GB12E4 [SEMIKRON]
IGBT4 Modules; IGBT4模块
| 型号： | SKM400GB12E4 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT4 Modules |
| 文件： | 总5页 (文件大小：406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM400GB12E4
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
1200
618
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
IC
Tj = 175 °C
475
ICnom
400
ICRM
ICRM = 3xICnom
1200
-20 ... 20
VGES
SEMITRANS®3
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
tpsc
10
µs
°C
Tj
-40 ... 175
IGBT4 Modules
SKM400GB12E4
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
440
329
A
A
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
400
A
IFRM = 3xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
1200
A
Features
1980
A
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
-40 ... 175
°C
Module
It(RMS)
Tstg
500
-40 ... 125
4000
A
°C
V
• Soft switching 4. Generation CAL
diode (CAL4)
Visol
AC sinus 50Hz, t = 1 min
Typical Applications
• AC inverter drives
• UPS
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Electronic welders at fsw up to 20 kHz
IC = 400 A
VCE(sat)
Tj = 25 °C
1.8
2.2
2.05
2.4
V
V
Remarks
V
GE = 15 V
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VCE0
rCE
0.8
0.7
2.5
3.8
5.8
0.1
0.9
0.8
2.9
4.0
6.5
0.3
V
V
mΩ
mΩ
V
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 15.2 mA
Tj = 25 °C
V
5
mA
mA
nF
nF
nF
nC
Ω
VGE = 0 V
CE = 1200 V
Tj = 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
Cies
Coes
Cres
QG
24.6
1.62
1.38
2260
1.9
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
RGint
td(on)
tr
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
242
47
ns
VCC = 600 V
IC = 400 A
ns
V
GE = ±15 V
Eon
td(off)
tf
33
mJ
ns
R
R
G on = 1 Ω
G off = 1 Ω
580
101
56
ns
di/dton = 9700 A/µs
di/dtoff = 4300 A/µs
Eoff
Rth(j-c)
mJ
K/W
per IGBT
0.072
GB
© by SEMIKRON
Rev. 0 – 19.02.2009
1
SKM400GB12E4
Characteristics
Symbol Conditions
Inverse diode
min.
typ.
max.
Unit
IF = 400 A
VF = VEC
Tj = 25 °C
2.2
2.52
2.47
V
V
V
GE = 0 V
Tj = 150 °C
2.15
chip
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
VF0
rF
1.3
0.9
2.3
3.1
450
68
1.5
1.1
2.5
3.4
V
V
mΩ
mΩ
A
SEMITRANS®3
IF = 400 A
di/dtoff = 8800 A/µs
IRRM
Qrr
µC
V
V
GE = ±15 V
CC = 600 V
Tj = 150 °C
Err
30.5
mJ
IGBT4 Modules
SKM400GB12E4
Rth(j-c)
per diode
0.14
20
K/W
Module
LCE
15
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
TC = 25 °C
RCC'+EE'
0.25
0.5
terminal-chip
TC = 125 °C
Features
Rth(c-s)
Ms
per module
0.02
0.038
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x ICNOM
to heat sink M6
3
5
5
to terminals M6
Mt
2.5
w
325
• Soft switching 4. Generation CAL
diode (CAL4)
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
GB
2
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM400GB12E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 5: Typ. transfer characteristic
© by SEMIKRON
Rev. 0 – 19.02.2009
3
SKM400GB12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM400GB12E4
Semitrans 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 19.02.2009
5
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