SKM400GAR176D [SEMIKRON]
Insulated Gate Bipolar Transistor, 430A I(C), 1700V V(BR)CES;
| 型号： | SKM400GAR176D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Insulated Gate Bipolar Transistor, 430A I(C), 1700V V(BR)CES 栅 |
| 文件： | 总6页 (文件大小：771K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB176D
ꢋ
ꢏ /(0ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Values
Units
ꢔꢕꢖꢉ
ꢋ1 ꢏ /( 0ꢕ
3)++
45+
ꢔ
&
&
%
ꢋ1 ꢏ 3(+ 0ꢕ
ꢋꢍ ꢏ /( 0ꢕ
ꢋꢍ ꢏ 6+ 0ꢕ
ꢕ
53+
%
%
ꢕ78ꢏ/$%ꢕꢆꢂꢃ
#++
: /+
3+
&
ꢔ
ꢕ78
ꢔ9ꢖꢉ
ꢑꢚꢈꢍ
ꢔꢕꢕ ꢏ 3/++ ꢔ; ꢔ9ꢖ < /+ ꢔ; ꢋ1 ꢏ 3/( 0ꢕ
ꢔꢕꢖꢉ = 3)++ ꢔ
>ꢈ
®
SEMITRANS 3
Inverse Diode
Trench IGBT Modules
%
ꢋ1 ꢏ 3(+ 0ꢕ
ꢋꢍ ꢏ /( 0ꢕ
ꢋꢍ ꢏ 6+ 0ꢕ
44+
5++
&
&
?
%
%
%
?78ꢏ/$%?ꢆꢂꢃ
#++
&
&
?78
SKM 400GB176D
SKM 400GAL176D
SKM 400GAR176D
ꢑꢚ ꢏ 3+ ꢃꢈ; ꢈꢊꢆ-
ꢋ1 ꢏ 3(+ 0ꢕ
//++
?ꢉ8
Freewheeling Diode
%
ꢋ1 ꢏ 3(+ 0ꢕ
ꢋꢍꢐꢈꢅ ꢏ /( 0ꢕ
ꢋꢍꢐꢈꢅ ꢏ 6+ 0ꢕ
44+
5++
&
&
?
%
%
%
?78ꢏ/$%?ꢆꢂꢃ
#++
&
&
?78
ꢑꢚ ꢏ 3+ ꢃꢈ; ꢈꢊꢆ-
ꢋ1 ꢏ 3(+ 0ꢕ
//++
?ꢉ8
Features
Module
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
%
(++
&
0ꢕ
0ꢕ
ꢔ
ꢀ
ꢀ
ꢀ
ꢑꢗ78ꢉꢘ
ꢋꢛ1
* 4+ --- @ 3(+
* 4+ --- @ 3/(
4+++
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
&ꢕ" 3 ꢃꢊꢆ-
ꢀ
ꢕ
ꢋ
ꢏ /(0ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
Typical Applications*
min.
typ.
max. Units
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ ()( * )(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
.ꢊꢆ' ꢚꢂꢙꢅꢌ
ꢀ
ꢀ
ꢀ
ꢔ9ꢖꢗꢑꢎꢘ
ꢔ9ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ 3/ ꢃ&
("/
("6
#"4
ꢔ
%
ꢔ9ꢖ ꢏ + ꢔ" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ1 ꢏ /( 0ꢕ
ꢋ1 ꢏ /( 0ꢕ
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ /(0ꢕ
ꢋ1 ꢏ 3/(0ꢕ
4
ꢃ&
ꢔ
ꢀ
ꢕꢖꢉ
ꢔꢕꢖ+
3
+"A
5"5
("/
/
3"/
3"3
4"/
#
ꢔ
ꢌꢕꢖ
ꢔ9ꢖ ꢏ 3( ꢔ
ꢃB
ꢃB
ꢔ
ꢔꢕꢖꢗꢈꢐꢑꢘ
%
ꢕꢆꢂꢃ ꢏ 5++ &" ꢔ9ꢖ ꢏ 3( ꢔ ꢋ1 ꢏ /(0ꢕꢍꢎꢊꢚꢒꢅꢛ-
/"4
/"A
ꢋ1 ꢏ 3/(0ꢕꢍꢎꢊꢚꢒꢅꢛ-
/"4(
ꢔ
ꢕꢊꢅꢈ
3A"6
3"3
ꢆ?
ꢆ?
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ /(" ꢔ9ꢖ ꢏ + ꢔ
ꢔ9ꢖ ꢏ *6ꢔ---@3(ꢔ
ꢏ 3 8ꢁC
ꢕꢌꢅꢈ
D9
+"66
ꢆ?
ꢆꢕ
/(++
ꢑ'ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ'ꢗꢂ ꢘ
55+
((
ꢆꢈ
ꢆꢈ
ꢃE
ꢆꢈ
ꢆꢈ
79ꢂꢆ ꢏ 4 B
79ꢂ ꢏ 4 B
ꢔꢕꢕ ꢏ 3/++ꢔ
%ꢕꢏ 5++&
3)+
66+
34(
ꢋ1 ꢏ 3/( 0ꢕ
ꢔ9ꢖ ꢏ : 3(ꢔ
ꢑ
ꢖꢂ
336
ꢃE
7ꢑꢎꢗ1*ꢍꢘ
ꢚꢅꢌ %9Fꢋ
+"+)(
GH.
GB
GAL
GAR
1
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ? ꢏ ꢔꢖꢕ
%?ꢆꢂꢃ ꢏ 5++ &; ꢔ9ꢖ ꢏ + ꢔ
ꢋ1 ꢏ /( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ 3/( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ /( 0ꢕ
3")
3"6
3"/
+"A
3")
5
3"A
/
ꢔ
ꢔ
ꢔ?+
3"4
3"3
3")
5
ꢔ
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ /( 0ꢕ
ꢔ
ꢌ?
ꢃB
ꢃB
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ 3/( 0ꢕ
®
%
%? ꢏ 5++ &
436
33)
&
778
SEMITRANS 3
Dꢌꢌ
ꢖꢌꢌ
'ꢊH'ꢑ ꢏ (6++ &H>ꢈ
>ꢕ
ꢔ9ꢖ ꢏ *3( ꢔ; ꢔꢕꢕ ꢏ 3/++ ꢔ
)6
ꢃE
Trench IGBT Modules
7ꢑꢎꢗ1*ꢍꢘI
ꢚꢅꢌ 'ꢊꢂ'ꢅ
+"3/(
GH.
FWD
ꢔ? ꢏ ꢔꢖꢕ
%
?ꢆꢂꢃ ꢏ 5++ &; ꢔ9ꢖ ꢏ + ꢔ
ꢋ1 ꢏ /( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ 3/( 0ꢕꢍꢎꢊꢚꢒꢅꢛ-
ꢋ1 ꢏ /( 0ꢕ
3")
3"6
3"/
+"A
3")
5
3"A
/
ꢔ
ꢔ
ꢔ
ꢔ
ꢔ
ꢔ
SKM 400GB176D
SKM 400GAL176D
SKM 400GAR176D
ꢔ?+
3"4
3"3
3")
5
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ /( 0ꢕ
ꢌ?
ꢋ1 ꢏ 3/( 0ꢕ
ꢋ1 ꢏ 3/( 0ꢕ
%
%? ꢏ 5++ &
436
33)
&
778
Dꢌꢌ
ꢖꢌꢌ
'ꢊH'ꢑ ꢏ (6++ &H>ꢈ
>ꢕ
Features
ꢔ9ꢖ ꢏ *3( ꢔ; ꢔꢕꢕ ꢏ 3/++ ꢔ
)6
ꢃE
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
7ꢑꢎꢗ1*ꢍꢘ?I
ꢚꢅꢌ 'ꢊꢂ'ꢅ
+"3/(
/+
GH.
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
Module
Jꢕꢖ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
3(
+"5(
+"(
ꢆꢁ
ꢃB
ꢃB
ꢀ
7ꢕꢕK@ꢖꢖK
ꢌꢅꢈ-" ꢑꢅꢌꢃꢊꢆꢐꢒ*ꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ /( 0ꢕ
ꢋꢍꢐꢈꢅꢏ 3/( 0ꢕ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications*
7ꢑꢎꢗꢍ*ꢈꢘ
8ꢈ
ꢚꢅꢌ ꢃꢂ'ꢇꢒꢅ
+"+56
(
GH.
Mꢃ
Mꢃ
ꢄ
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ ()( * )(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
.ꢊꢆ' ꢚꢂꢙꢅꢌ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆL 8#
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ 8#
5
ꢀ
ꢀ
ꢀ
8ꢑ
/"(
(
ꢙ
5/(
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
GB
GAL
GAR
2
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Z
th
Symbol Conditions
Values
Units
Z
th(j-c)l
7ꢊ
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
ꢊ ꢏ 4
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
(/
ꢃLH.
ꢃLH.
ꢃLH.
ꢃLH.
ꢈ
7ꢊ
36
7ꢊ
4"#
7ꢊ
+"4
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+(#A
+"+3//
+"++/
ꢈ
ꢈ
®
ꢑꢐꢇꢊ
ꢊ ꢏ 4
+"+/
ꢈ
SEMITRANS 3
Z
7ꢊ
th(j-c)D
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
ꢊ ꢏ 4
ꢊ ꢏ 3
ꢊ ꢏ /
ꢊ ꢏ 5
6(
ꢃLH.
ꢃLH.
ꢃLH.
ꢃLH.
ꢈ
Trench IGBT Modules
7ꢊ
/6
7ꢊ
3+"(
3"(
7ꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
ꢑꢐꢇꢊ
+"+(4
+"++)(
+"++36
SKM 400GB176D
SKM 400GAL176D
SKM 400GAR176D
ꢈ
ꢈ
ꢑꢐꢇꢊ
ꢊ ꢏ 4
+"+++/
ꢈ
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
Typical Applications*
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
ꢃꢐꢊꢆꢈ ()( * )(+ ꢔ &ꢕ
,ꢇ!ꢒꢊꢍ ꢑꢌꢐꢆꢈꢚꢂꢌꢑ ꢗꢐꢇ$ꢊꢒꢊꢐꢌꢓ ꢈꢓꢈꢑ-ꢘ
.ꢊꢆ' ꢚꢂꢙꢅꢌ
ꢀ
ꢀ
ꢀ
ꢀ
GB
GAL
GAR
3
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
4
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
14-04-2011 STM
© by SEMIKRON
SKM 400GB176D
UL Recognized
File no. 63 532
ꢕꢐꢈꢅ I (#
9F
ꢕꢐꢈꢅ I(#
9&J
ꢕꢐꢈꢅ I()
9&7
ꢕꢐꢈꢅ I(6
6
14-04-2011 STM
© by SEMIKRON
相关型号：
SKM400GB062D
Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, SEMITRANS-9
SEMIKRON
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