SKM400GB066D [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SKM400GB066D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：1016K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB066D
ꢋ
ꢏ +,-ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
ꢍꢐꢈꢅ
Values
Units
IGBT
ꢔꢕꢖꢉ
#00
/#0 ꢗ990ꢘ
/?0 ꢗ9?0ꢘ
#00
ꢔ
&
%
%
%
ꢋꢍ ꢏ +, ꢗ>0ꢘ -ꢕ" ꢋ3 ꢏ *,0 -ꢕ
ꢋꢍ ꢏ +, ꢗ>0ꢘ -ꢕ" ꢋ3 ꢏ *?, -ꢕ
ꢑꢚ ꢏ * ꢃꢈ
ꢕ
&
ꢕ
&
ꢕ:@
ꢔ8ꢖꢉ
A +0
ꢔ
ꢋꢛ3" ꢗꢋꢈꢑꢄ
ꢘ
. /0 111 2*?, ꢗ*+,ꢘ
-ꢕ
ꢔꢊꢈꢂꢒ
&ꢕ" * ꢃꢊꢆ1
/000
ꢔ
TM
Inverse diode
SEMITRANS
3
%
%
%
ꢋꢍ ꢏ +, ꢗ>0ꢘ -ꢕ" ꢋ3 ꢏ *,0 -ꢕ
/90 ꢗ9+0ꢘ
/90 ꢗ9+0ꢘ
>00
&
&
&
B
ꢋꢍ ꢏ +, ꢗ>0ꢘ -ꢕ" ꢋ3 ꢏ *?, -ꢕ
ꢑꢚ ꢏ * ꢃꢈ
B
Trench IGBT Modules
B:@
%
ꢑꢚ ꢏ *0 ꢃꢈ7 ꢈꢊꢆ17 ꢋ3 ꢏ *?, -ꢕ
&
Bꢉ@
ꢋ
ꢏ +,-ꢕ" ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ'
SKM 400GB066D
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
ꢔ8ꢖꢗꢑꢎꢘ
ꢔ8ꢖ ꢏ ꢔꢕꢖ" %ꢕ ꢏ #"/ ꢃ&
,
,">
#",
ꢔ
ꢃ&
ꢔ
Preliminary Data
%
ꢔ8ꢖ ꢏ 0" ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ" ꢋ3 ꢏ +, ꢗꢘ -ꢕ
ꢋ3 ꢏ +, ꢗꢘ -ꢕ
0"+,
0"?,
ꢕꢖꢉ
ꢔꢕꢖꢗꢋCꢘ
ꢌꢕꢖ
0"D ꢗ0">,ꢘ
*"/ ꢗ+"*ꢘ
* ꢗ0"Dꢘ
+"9 ꢗ9ꢘ
ꢔ8ꢖ ꢏ *, ꢔ" ꢋ3 ꢏ +, ꢗ*,0ꢘ -ꢕ
ꢃE
Features
ꢔꢕꢖꢗꢈꢐꢑꢘ
%ꢕꢆꢂꢃ ꢏ /00 &" ꢔ8ꢖ ꢏ *, ꢔ" ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
*"/, ꢗ*"?ꢘ
*"D ꢗ+"*ꢘ
ꢔ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Gꢕꢖ
ꢇꢆ'ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ'ꢊꢑꢊꢂꢆꢈ
+/"?
*",/
0"?9
ꢆB
ꢆB
ꢆB
ꢆꢁ
ꢔ8ꢖ ꢏ 0" ꢔꢕꢖ ꢏ +, ꢔ" ꢏ * @ꢁF
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
+0
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ" ꢈꢅꢒ
ꢀ
:
ꢌꢅꢈ1" ꢑꢅꢌꢃꢊꢆꢐꢒ.ꢍꢎꢊꢚ ꢋꢍꢏ +, ꢗ*+,ꢘ -ꢕ
ꢔꢕꢕ ꢏ 900 ꢔ" %ꢕꢆꢂꢃ ꢏ /00 &
0"9, ꢗ0",ꢘ
ꢃE
ꢕꢕH2ꢖꢖH
ꢒꢊꢃꢊꢑꢊꢆꢄ ꢑꢂ # $ %
ꢕ
ꢑ'ꢗꢂꢆꢘ
ꢑꢌ
+00
#0
ꢆꢈ
ꢆꢈ
ꢆꢈ
ꢆꢈ
:8ꢂꢆ ꢏ :8ꢂ ꢏ *", E" ꢋ3 ꢏ *,0 -ꢕ
Typical Applications
&ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ 'ꢌꢊꢛꢅꢈ
()ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ'ꢅꢌꢈ
ꢑ'ꢗꢂ ꢘ
ꢔ8ꢖ ꢏ .>ꢔ I 2*,ꢔ
,#0
,9
ꢀ
ꢀ
ꢀ
ꢑ
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
> ꢗ*#ꢘ
ꢃJ
Inverse diode
ꢔB ꢏ ꢔꢖꢕ
%Bꢆꢂꢃ ꢏ /00 &7 ꢔ8ꢖ ꢏ 0 ꢔ7 ꢋ3 ꢏ +, ꢗ*,0ꢘ
*"/
*"#
ꢔ
Remarks
-ꢕ
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ ꢒꢊꢃꢊꢑꢅ' ꢑꢂ ꢋ ꢏ
ꢀ
ꢍ
ꢔꢗꢋCꢘ
ꢌꢋ
ꢋ3 ꢏ +, ꢗ*,0ꢘ -ꢕ
ꢋ3 ꢏ +, ꢗ*,0ꢘ -ꢕ
0"D,
*"*
*
ꢔ
ꢃE
&
*+,-ꢕ ꢃꢐ$" ꢌꢅꢍꢂꢃꢃꢅꢆ'ꢅ' ꢋ
./0 111 2*,0-ꢕ
ꢏ
*",
ꢂꢚ
%
%Bꢆꢂꢃ ꢏ /00 &7 ꢋ3 ꢏ *,0 ꢗ ꢘ -ꢕ
/*0
#+
::@
)ꢌꢂ'ꢇꢍꢑ ꢌꢅꢒꢊꢐ!ꢊꢒꢊꢑꢓ ꢌꢅꢈꢇꢒꢑꢈ ꢐꢌꢅ ꢛꢐꢒꢊ' Kꢌꢌ
'ꢊI'ꢑ ꢏ ?+,0 &I6ꢈ
ꢔ8ꢖ ꢏ 0 ꢔ
6ꢕ
ꢀ
ꢀ
ꢂꢌ ꢋ 4*,0-ꢕ
ꢖꢌꢌ
*/
ꢃJ
3
ꢉꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ 'ꢐꢑꢐ5 ꢑ 4 #6ꢈ7 ꢔ
4
ꢚ
8ꢖ
Thermal characteristics
*,ꢔ7 ꢋ ꢏ *,0-ꢕ7 ꢔ 4 9#0ꢔ" ꢇꢈꢅ
:
ꢚꢅꢌ %8Lꢋ
0"*+
0"+
MIN
MIN
3
ꢍꢍ
ꢑꢎꢗ3.ꢍꢘ
ꢂ ꢈꢂ ꢑ : ꢆꢅꢍꢅꢈꢈꢐꢌꢓ ;
:
ꢚꢅꢌ %ꢆꢛꢅꢌꢈꢅ Oꢊꢂ'ꢅ
8
ꢑꢎꢗ3.ꢍꢘO
ꢋꢐ<ꢅ ꢍꢐꢌꢅ ꢂ ꢂꢛꢅꢌ.ꢛꢂꢒꢑꢐꢄꢅ ꢍꢐꢇꢈꢅ'
!ꢓ ꢈꢑꢌꢐꢓ ꢊꢆ'ꢇꢍꢑꢐꢆꢍꢅꢈ
ꢀ
:
ꢚꢅꢌ ꢃꢂ'ꢇꢒꢅ
0"09>
MIN
ꢑꢎꢗꢍ.ꢈꢘ
Mechanical data
@
ꢑꢂ ꢎꢅꢐꢑꢈꢊꢆ< @#
9
,
,
Pꢃ
Pꢃ
ꢈ
@
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ @#
+",
ꢑ
ꢙ
9+,
ꢄ
GB
1
28-10-2005 RAA
© by SEMIKRON
SKM 400GB066D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
28-10-2005 RAA
© by SEMIKRON
SKM 400GB066D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
28-10-2005 RAA
© by SEMIKRON
SKM 400GB066D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
Dimensions in mm
File no. E 63 532
8L
ꢕꢐꢈꢅ O,#
ꢕꢐꢈꢅ O ,#
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
28-10-2005 RAA
© by SEMIKRON
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