SKM400GB123D_06 [SEMIKRON]
IGBT Modules SKM 400GB123D; IGBT模块SKM 400GB123D
| 型号： | SKM400GB123D_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | IGBT Modules SKM 400GB123D |
| 文件： | 总6页 (文件大小：650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB123D
. 4 05 6*ꢖ ꢇꢅꢌꢏꢘꢘ ꢋꢈꢕꢏꢑꢚꢄꢘꢏ ꢘꢆꢏꢐꢄ#ꢄꢏꢒ
Absolute Maximum Ratings
Symbol Conditions
IGBT
ꢐ
Values
Units
ꢛ*7ꢃ
.8 4 05 6*
/011
:11
ꢛ
+
+
&
.8 4 /51 6*
.
ꢐꢍꢘꢏ 4 05 6*
ꢐꢍꢘꢏ 4 ;1 6*
*
.
<<1
&
&
*=ꢁ40%&*ꢅꢋꢗ
$11
? 01
/1
+
ꢛ
*=ꢁ
ꢛ>7ꢃ
ꢈꢆꢘꢐ
ꢛ** 4 $11 ꢛ@ ꢛ>7 A 01 ꢛ@ .8 4 /05 6*
ꢛ*7ꢃ B /011 ꢛ
Cꢘ
®
SEMITRANS 3
Inverse Diode
IGBT Modules
&
.8 4 /51 6*
.
ꢐꢍꢘꢏ 4 05 6*
ꢐꢍꢘꢏ 4 ;1 6*
<D1
0$1
+
+
(
.
&
&
&
(=ꢁ40%&(ꢅꢋꢗ
$11
+
+
(=ꢁ
SKM 400GB123D
ꢈꢆ 4 /1 ꢗꢘ@ ꢘꢄꢅE
.8 4 /51 6*
0;;1
(ꢃꢁ
Module
&
511
+
6*
6*
ꢛ
ꢈꢉ=ꢁꢃꢓ
.
' :1EEEF /51
' :1EEEF /05
0511
ꢊ8
.
ꢘꢈꢎ
ꢛꢄꢘꢋꢌ
+*ꢖ / ꢗꢄꢅE
Features
ꢁꢂꢃ ꢄꢅꢆꢇꢈ ꢉꢊꢋꢌꢈꢍꢎꢏ ꢐꢋꢅꢈꢑꢋꢌꢌꢏꢒꢓ
ꢔ ꢐꢕꢍꢅꢅꢏꢌꢖ ꢕꢋꢗꢎꢏꢅꢏꢋꢇꢘ ꢃꢄ
ꢙꢋꢚ ꢄꢅꢒꢇꢐꢈꢍꢅꢐꢏ ꢐꢍꢘꢏ
ꢛꢏꢑ ꢌꢋꢚ ꢈꢍꢄꢌ ꢐꢇꢑꢑꢏꢅꢈ ꢚꢄꢈꢕ ꢌꢋꢚ
ꢀ
ꢀ
ꢀ
ꢀ
. 4 05 6*ꢖ ꢇꢅꢌꢏꢘꢘ ꢋꢈꢕꢏꢑꢚꢄꢘꢏ ꢘꢆꢏꢐꢄ#ꢄꢏꢒ
Characteristics
Symbol Conditions
IGBT
ꢐ
min.
typ.
max. Units
ꢈꢏꢗꢆꢏꢑꢍꢈꢇꢑꢏ ꢒꢏꢆꢏꢅꢒꢏꢅꢐꢏ
ꢛ>7ꢉꢈꢕꢓ
ꢛ>7 4 ꢛ*7ꢖ &* 4 /0 ꢗ+
:ꢖ5
5ꢖ5
$ꢖ5
ꢛ
!ꢄꢎꢕ ꢘꢕꢋꢑꢈ ꢐꢄꢑꢐꢇꢄꢈ ꢐꢍꢆꢍ"ꢄꢌꢄꢈ ꢖ ꢘꢏꢌ#
ꢀ
&
ꢛ>7 4 1 ꢛꢖ ꢛ*7 4 ꢛ*7ꢃ
.8 4 05 6*
.8 4 05 6*
.8 4 /05 6*
.8 4 056*
.8 4 /056*
1ꢖ/
/ꢖ:
/ꢖ$
<ꢖ$$
5
1ꢖ<
/ꢖ$
ꢗ+
ꢛ
*7ꢃ
ꢌꢄꢗꢄꢈꢄꢅꢎ ꢈꢋ $ % &
ꢐꢅꢋꢗ
ꢛ*71
ꢙꢍꢈꢐꢕ'ꢇꢆ #ꢑꢏꢏ
(ꢍꢘꢈ ) ꢘꢋ#ꢈ *+ꢙ ꢒꢄꢋꢒꢏꢘ
&ꢘꢋꢌꢍꢈꢏꢒ ꢐꢋꢆꢆꢏꢑ "ꢍꢘꢏꢆꢌꢍꢈꢏ ꢇꢘꢄꢅꢎ
,-* ,ꢄꢑꢏꢐꢈ *ꢋꢆꢆꢏꢑ -ꢋꢅꢒꢄꢅꢎ
.ꢏꢐꢕꢅꢋꢌꢋꢎ
ꢀ
ꢀ
ꢀ
/ꢖ;
ꢛ
ꢑ*7
ꢛ>7 4 /5 ꢛ
:ꢖ$$
$ꢖ<<
ꢗG
ꢗG
ꢛ*7ꢉꢘꢍꢈꢓ
&*ꢅꢋꢗ 4 <11 +ꢖ ꢛ>7 4 /5 ꢛ .8 4 6*ꢐꢕꢄꢆꢌꢏꢊE
0ꢖ5
<
ꢛ
ꢙꢍꢑꢎꢏ ꢐꢌꢏꢍꢑꢍꢅꢐꢏ ꢉ/0 ꢗꢗꢓ ꢍꢅꢒ
ꢐꢑꢏꢏꢆꢍꢎꢏ ꢒꢄꢘꢈꢍꢅꢐꢏꢘ ꢉ01 ꢗꢗꢓ
ꢀ
*
00
<1
:
ꢅ(
ꢅ(
ꢄꢏꢘ
*
ꢛ*7 4 05ꢖ ꢛ>7 4 1 ꢛ
# 4 / ꢁ!H
<ꢖ<
ꢋꢏꢘ
*
/ꢖ0
/ꢖ$
ꢅ(
ꢅ*
J
ꢑꢏꢘ
Typical Applications
I>
ꢛ>7 4 ';ꢛ ' F01ꢛ
.8 4 6*
<111
/ꢖ05
+* ꢄꢅꢊꢏꢑꢈꢏꢑ ꢒꢑꢄꢊꢏꢘ
23ꢃ
ꢀ
=
ꢀ
>ꢄꢅꢈ
ꢈꢒꢉꢋꢅꢓ
ꢈꢑ
011
//5
<;
:11
001
ꢅꢘ
ꢅꢘ
ꢗK
ꢅꢘ
ꢅꢘ
=
>ꢋꢅ 4 <ꢖ< G
>ꢋ## 4 <ꢖ< G
ꢛ** 4 $11ꢛ
7ꢋꢅ
ꢈꢒꢉꢋ##ꢓ
ꢈ#
&*ꢅꢋꢗ4 <11+
=
.8 4 /05 6*
ꢛ>7 4 ? /5ꢛ
L01
;1
D11
/11
7ꢋ##
:1
ꢗK
=
ꢆꢏꢑ &>-.
1ꢖ15
MNO
ꢈꢕꢉ8'ꢐꢓ
GB
1
11-09-2006 RAA
© by SEMIKRON
SKM 400GB123D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢛ( 4 ꢛ7*
&(ꢅꢋꢗ 4 <11 +@ ꢛ>7 4 1 ꢛ
.8 4 05 6*ꢐꢕꢄꢆꢌꢏꢊE
.8 4 /05 6*ꢐꢕꢄꢆꢌꢏꢊE
.8 4 05 6*
0
0ꢖ5
/ꢖ0
:ꢖ<
ꢛ
ꢛ
/ꢖ;
/ꢖ/
ꢛ(1
ꢛ
.8 4 /05 6*
.8 4 05 6*
ꢛ
ꢑ(
<
ꢗG
ꢗG
.8 4 /05 6*
.8 4 /05 6*
®
&
&(ꢅꢋꢗ 4 <11 +
/:1
/<
+
==ꢁ
SEMITRANS 3
Iꢑꢑ
7ꢑꢑ
ꢒꢄNꢒꢈ 4 0111 +NCꢘ
C*
ꢛ>7 4 1 ꢛ@ ꢛ** 4 $11 ꢛ
ꢗK
IGBT Modules
=
ꢆꢏꢑ ꢒꢄꢋꢒꢏ
1ꢖ/05
01
MNO
ꢈꢕꢉ8'ꢐꢓ,
Module
ꢙ*7
/5
1ꢖ<5
1ꢖ5
ꢅ!
ꢗG
ꢗG
SKM 400GB123D
=
ꢑꢏꢘEꢖ ꢈꢏꢑꢗꢄꢅꢍꢌ'ꢐꢕꢄꢆ
.
ꢐꢍꢘꢏ4 05 6*
**PF77P
.ꢐꢍꢘꢏ4 /05 6*
=
ꢆꢏꢑ ꢗꢋꢒꢇꢌꢏ
1ꢖ1<;
5
MNO
ꢔꢗ
ꢎ
ꢈꢕꢉꢐ'ꢘꢓ
ꢁꢘ
ꢚ
ꢈꢋ ꢕꢏꢍꢈ ꢘꢄꢅQ ꢁ$
<
<05
Features
ꢁꢂꢃ ꢄꢅꢆꢇꢈ ꢉꢊꢋꢌꢈꢍꢎꢏ ꢐꢋꢅꢈꢑꢋꢌꢌꢏꢒꢓ
ꢔ ꢐꢕꢍꢅꢅꢏꢌꢖ ꢕꢋꢗꢎꢏꢅꢏꢋꢇꢘ ꢃꢄ
ꢙꢋꢚ ꢄꢅꢒꢇꢐꢈꢍꢅꢐꢏ ꢐꢍꢘꢏ
ꢛꢏꢑ ꢌꢋꢚ ꢈꢍꢄꢌ ꢐꢇꢑꢑꢏꢅꢈ ꢚꢄꢈꢕ ꢌꢋꢚ
ꢀ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
ꢈꢏꢗꢆꢏꢑꢍꢈꢇꢑꢏ ꢒꢏꢆꢏꢅꢒꢏꢅꢐꢏ
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
!ꢄꢎꢕ ꢘꢕꢋꢑꢈ ꢐꢄꢑꢐꢇꢄꢈ ꢐꢍꢆꢍ"ꢄꢌꢄꢈ ꢖ ꢘꢏꢌ#
ꢀ
ꢌꢄꢗꢄꢈꢄꢅꢎ ꢈꢋ $ % &
ꢐꢅꢋꢗ
ꢙꢍꢈꢐꢕ'ꢇꢆ #ꢑꢏꢏ
(ꢍꢘꢈ ) ꢘꢋ#ꢈ *+ꢙ ꢒꢄꢋꢒꢏꢘ
&ꢘꢋꢌꢍꢈꢏꢒ ꢐꢋꢆꢆꢏꢑ "ꢍꢘꢏꢆꢌꢍꢈꢏ ꢇꢘꢄꢅꢎ
,-* ,ꢄꢑꢏꢐꢈ *ꢋꢆꢆꢏꢑ -ꢋꢅꢒꢄꢅꢎ
.ꢏꢐꢕꢅꢋꢌꢋꢎ
ꢀ
ꢀ
ꢀ
ꢙꢍꢑꢎꢏ ꢐꢌꢏꢍꢑꢍꢅꢐꢏ ꢉ/0 ꢗꢗꢓ ꢍꢅꢒ
ꢐꢑꢏꢏꢆꢍꢎꢏ ꢒꢄꢘꢈꢍꢅꢐꢏꢘ ꢉ01 ꢗꢗꢓ
ꢀ
Typical Applications
+* ꢄꢅꢊꢏꢑꢈꢏꢑ ꢒꢑꢄꢊꢏꢘ
23ꢃ
ꢀ
ꢀ
GB
2
11-09-2006 RAA
© by SEMIKRON
SKM 400GB123D
Z
th
Symbol Conditions
Values
Units
Z
th(j-c)l
=
=
=
=
ꢄ 4 /
ꢄ 4 0
ꢄ 4 <
ꢄ 4 :
ꢄ 4 /
ꢄ 4 0
ꢄ 4 <
<0
ꢗQNO
ꢗQNO
ꢗQNO
ꢗQNO
ꢘ
ꢄ
ꢄ
ꢄ
ꢄ
/:
<ꢖ:
1ꢖ$
ꢈꢍꢇꢄ
ꢈꢍꢇꢄ
ꢈꢍꢇꢄ
1ꢖ1::L
1ꢖ1/00
1ꢖ11:
ꢘ
ꢘ
®
ꢈꢍꢇꢄ
ꢄ 4 :
1ꢖ1110
ꢘ
SEMITRANS 3
Z
th(j-c)D
=
=
=
=
ꢄ 4 /
ꢄ 4 0
ꢄ 4 <
ꢄ 4 :
ꢄ 4 /
ꢄ 4 0
ꢄ 4 <
;1
ꢗQNO
ꢗQNO
ꢗQNO
ꢗQNO
ꢘ
ꢄ
ꢄ
ꢄ
ꢄ
IGBT Modules
<<
/1ꢖ0
/ꢖ;
ꢈꢍꢇꢄ
ꢈꢍꢇꢄ
ꢈꢍꢇꢄ
1ꢖ15
1ꢖ115L
1ꢖ11<:
SKM 400GB123D
ꢘ
ꢘ
ꢈꢍꢇꢄ
ꢄ 4 :
1ꢖ111<
ꢘ
Features
ꢁꢂꢃ ꢄꢅꢆꢇꢈ ꢉꢊꢋꢌꢈꢍꢎꢏ ꢐꢋꢅꢈꢑꢋꢌꢌꢏꢒꢓ
ꢔ ꢐꢕꢍꢅꢅꢏꢌꢖ ꢕꢋꢗꢎꢏꢅꢏꢋꢇꢘ ꢃꢄ
ꢙꢋꢚ ꢄꢅꢒꢇꢐꢈꢍꢅꢐꢏ ꢐꢍꢘꢏ
ꢛꢏꢑ ꢌꢋꢚ ꢈꢍꢄꢌ ꢐꢇꢑꢑꢏꢅꢈ ꢚꢄꢈꢕ ꢌꢋꢚ
ꢀ
ꢀ
ꢀ
ꢀ
ꢈꢏꢗꢆꢏꢑꢍꢈꢇꢑꢏ ꢒꢏꢆꢏꢅꢒꢏꢅꢐꢏ
!ꢄꢎꢕ ꢘꢕꢋꢑꢈ ꢐꢄꢑꢐꢇꢄꢈ ꢐꢍꢆꢍ"ꢄꢌꢄꢈ ꢖ ꢘꢏꢌ#
ꢀ
ꢌꢄꢗꢄꢈꢄꢅꢎ ꢈꢋ $ % &
ꢐꢅꢋꢗ
ꢙꢍꢈꢐꢕ'ꢇꢆ #ꢑꢏꢏ
(ꢍꢘꢈ ) ꢘꢋ#ꢈ *+ꢙ ꢒꢄꢋꢒꢏꢘ
&ꢘꢋꢌꢍꢈꢏꢒ ꢐꢋꢆꢆꢏꢑ "ꢍꢘꢏꢆꢌꢍꢈꢏ ꢇꢘꢄꢅꢎ
,-* ,ꢄꢑꢏꢐꢈ *ꢋꢆꢆꢏꢑ -ꢋꢅꢒꢄꢅꢎ
.ꢏꢐꢕꢅꢋꢌꢋꢎ
ꢀ
ꢀ
ꢀ
ꢙꢍꢑꢎꢏ ꢐꢌꢏꢍꢑꢍꢅꢐꢏ ꢉ/0 ꢗꢗꢓ ꢍꢅꢒ
ꢐꢑꢏꢏꢆꢍꢎꢏ ꢒꢄꢘꢈꢍꢅꢐꢏꢘ ꢉ01 ꢗꢗꢓ
ꢀ
Typical Applications
+* ꢄꢅꢊꢏꢑꢈꢏꢑ ꢒꢑꢄꢊꢏꢘ
23ꢃ
ꢀ
ꢀ
GB
3
11-09-2006 RAA
© by SEMIKRON
SKM 400GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
4
11-09-2006 RAA
© by SEMIKRON
SKM 400GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
11-09-2006 RAA
© by SEMIKRON
SKM 400GB123D
UL Recognized
File 63 532
*ꢍꢘꢏ , 5$
>-
*ꢍꢘꢏ , 5$
6
11-09-2006 RAA
© by SEMIKRON
相关型号：
©2020 ICPDF网 联系我们和版权申明