SKM400GAR128D [SEMIKRON]
SPT IGBT Module; SPT IGBT模块
| 型号： | SKM400GAR128D |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | SPT IGBT Module |
| 文件： | 总4页 (文件大小：713K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SKM 400GB128D...
ꢌ ꢍ )- .ꢗ" ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓꢚꢊꢈꢅ ꢈꢛꢅꢑꢊꢎꢊꢅ'
Absolute Maximum Ratings
Symbol Conditions
ꢑ
Values
Units
IGBT
ꢖꢗꢘꢉ
/)**
-#- 14**3
#**
ꢖ
&
%
%
ꢌꢑ ꢍ )- 12*3 .ꢗ
ꢏꢛ ꢍ / ꢃꢈ
ꢗ
&
ꢗ56
ꢖ7ꢘꢉ
8 )*
ꢖ
ꢌ " 1ꢌꢈꢏꢄ
3
ꢌ:ꢋꢘ5&ꢌ%:; < ꢌꢈꢏꢄ
&ꢗ" / ꢃꢊꢆ=
ꢐ 4* === > /-* 1/)-3
.ꢗ
9
ꢖꢊꢈꢂꢔ
4***
ꢖ
Inverse diode
TM
%
ꢌꢑ ꢍ )- 12*3 .ꢗ
@A* 1)#*3
#**
&
&
SEMITRANS
3
?
%
ꢏꢛ ꢍ / ꢃꢈ
?56
%
ꢏꢛ ꢍ /* ꢃꢈB ꢈꢊꢆ=B ꢌ9 ꢍ /-* .ꢗ
)A**
&
?ꢉ6
SPT IGBT Module
Freewheeling diode
%
ꢌꢑ ꢍ )- 12*3 .ꢗ
@A* 1)#*3
#**
&
&
?
%
ꢏꢛ ꢍ / ꢃꢈ
?56
SKM 400GB128D
SKM 400GAL128D
SKM 400GAR128D
%
ꢏꢛ ꢍ /* ꢃꢈB ꢈꢊꢆB ꢌ9 ꢍ /-* .ꢗ
)A**
&
?ꢉ6
ꢌ ꢍ )- .ꢗ" ꢇꢆꢔꢅꢈꢈ ꢂꢏꢒꢅꢓꢚꢊꢈꢅ ꢈꢛꢅꢑꢊꢎꢊꢅ'
Characteristics
Symbol Conditions
IGBT
ꢑ
min.
typ.
max. Units
ꢖ7ꢘ1ꢏꢒ3
ꢖ7ꢘ ꢍ ꢖꢗꢘ" %ꢗ ꢍ /) ꢃ&
4"-
-"-
*")
#"4-
*"#
ꢖ
ꢃ&
ꢖ
%
ꢖ7ꢘ ꢍ *" ꢖꢗꢘ ꢍ ꢖꢗꢘꢉ" ꢌ9 ꢍ )- 13 .ꢗ
ꢌ9 ꢍ )- 13 .ꢗ
ꢗꢘꢉ
Features
ꢖꢗꢘ1ꢌ:3
ꢓꢗꢘ
/ 1*"A3
@ 143
/"/- 1/"*-3
4 1-3
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢉꢋꢌ ꢍ ꢉꢂꢎꢏꢐꢋꢇꢑꢒꢐꢌꢒꢓꢂꢇꢄꢒ
ꢏꢅꢑꢒꢆꢂꢔꢂꢄꢕ
ꢖ7ꢘ ꢍ /- ꢖ" ꢌ9 ꢍ )- 1/)-3 .ꢗ
ꢃC
ꢀ
ꢀ
ꢖꢗꢘ1ꢈꢙꢏ3
%ꢗꢆꢂꢃ ꢍ @** &" ꢖ7ꢘ ꢍ /- ꢖ" ꢑꢒꢊꢛ ꢔꢅ ꢅꢔ
/"A 1)"/3 )"@- 1)"--3
ꢖ
ꢗꢊꢅꢈ
ꢗꢂꢅꢈ
ꢗꢓꢅꢈ
Dꢗꢘ
ꢇꢆ'ꢅꢓ ꢎꢂꢔꢔꢂꢚꢊꢆꢄ ꢑꢂꢆ'ꢊꢏꢊꢂꢆꢈ
)#
@
ꢆ?
ꢆ?
ꢆ?
ꢆꢁ
ꢖ
ꢚꢊꢏꢒ ꢛꢂꢈꢊꢏꢊ ꢅ ꢏꢅꢃꢛꢅꢓꢙꢏꢇꢓꢅ
ꢀ
ꢀ
ꢗꢘꢈꢙꢏ
ꢖ7ꢘ ꢍ *" ꢖꢗꢘ ꢍ )- ꢖ" ꢎ ꢍ / 6ꢁ,
ꢑꢂꢅꢎꢎꢊꢑꢊꢅꢆꢏ
ꢁꢊꢄꢒ ꢈꢒꢂꢓꢏ ꢑꢊꢓꢑꢇꢊꢏ ꢑꢙꢛꢙ!ꢊꢔꢊꢏꢕ" ꢈꢅꢔꢎ
ꢔꢊꢃꢊꢏꢊꢆꢄ ꢏꢂ # $ %
@
)*
5ꢗꢗE>ꢘꢘE
ꢓꢅꢈ=" ꢏꢅꢓꢃꢊꢆꢙꢔꢐꢑꢒꢊꢛ ꢌꢑꢍ )- 1/)-3 .ꢗ
*"@- 1*"-3
ꢃC
ꢑ
ꢏ'1ꢂꢆ3
ꢏꢓ
ꢏ'1ꢂꢎꢎ3
ꢏꢎ
ꢖꢗꢗ ꢍ #** ꢖ" %ꢗꢆꢂꢃ ꢍ @** &
57ꢂꢆ ꢍ 57ꢂꢎꢎ ꢍ 4"F C" ꢌ9 ꢍ /)- .ꢗ
ꢖ7ꢘ ꢍ 8 /- ꢖ
//*
#*
ꢆꢈ
ꢆꢈ
ꢆꢈ
ꢆꢈ
Typical Applications
&ꢗ ꢊꢆ ꢅꢓꢏꢅꢓ 'ꢓꢊ ꢅꢈ
(ꢋꢉ
ꢘꢔꢅꢑꢏꢓꢂꢆꢊꢑ ꢚꢅꢔ'ꢅꢓꢈ ꢙꢏ ꢎ ꢇꢛ ꢏꢂ
ꢀ
ꢀ
ꢀ
2**
#*
ꢘꢂꢆ 1ꢘꢂꢎꢎ
3
@) 1@/3
ꢃG
ꢈꢚ
)*+ꢁ,
Inverse diode
ꢖ? ꢍ ꢖꢘꢗ
%?ꢆꢂꢃ ꢍ @** &B ꢖ7ꢘ ꢍ * ꢖB ꢌ9 ꢍ )- 1/)-3
) 1/"23
)"-
ꢖ
.ꢗ
ꢖ1ꢌ:3
ꢓꢌ
ꢌ9 ꢍ )- 1/)-3 .ꢗ
ꢌ9 ꢍ )- 1/)-3 .ꢗ
/"/
@
/")
4"@
ꢖ
ꢃC
&
%
%?ꢆꢂꢃ ꢍ @** &B ꢌ9 ꢍ /)- 1 3 .ꢗ
/F#
4*
556
Hꢓꢓ
ꢘꢓꢓ
'ꢊI'ꢏ ꢍ )4** &IJꢈ
ꢖ7ꢘ ꢍ * ꢖ
Jꢗ
/#
ꢃG
FWD
ꢖ? ꢍ ꢖꢘꢗ
ꢖ1ꢌ:3
%
? ꢍ @** &B ꢖ7ꢘ ꢍ * ꢖ" ꢌ9 ꢍ )- 1/)-3 .ꢗ
) 1/"23
/"/
@
)"-
/")
4"@
ꢖ
ꢖ
ꢌ9 ꢍ )- 1/)-3 .ꢗ
ꢌ9 ꢍ )- 1/)-3 .ꢗ
ꢓꢌ
ꢃC
&
%
%? ꢍ @** &B ꢌ9 ꢍ /)- 1 3 .ꢗ
/F#
4*
556
Hꢓꢓ
ꢘꢓꢓ
'ꢊI'ꢏ ꢍ * &IJꢈ
ꢖ7ꢘ ꢍ * ꢖ
Jꢗ
/#
ꢃG
Thermal characteristics
5ꢏꢒ19ꢐꢑ3
ꢛꢅꢓ %7Kꢌ
*"*--
*"/)-
LIM
LIM
5ꢏꢒ19ꢐꢑ3N
ꢛꢅꢓ %ꢆ ꢅꢓꢈꢅ Nꢊꢂ'ꢅ
5ꢏꢒ1ꢑꢐꢈ3
ꢛꢅꢓ ꢃꢂ'ꢇꢔꢅ
*"*@2
LIM
Mechanical data
6ꢈ
ꢏꢂ ꢒꢅꢙꢏꢈꢊꢆ+ 6#
@
-
-
;ꢃ
;ꢃ
6ꢏ
ꢏꢂ ꢏꢅꢓꢃꢊꢆꢙꢔꢈ 6#
)"-
ꢚ
@)-
ꢄ
GB
GAL
GAR
1
19-09-2005 RAA
© by SEMIKRON
SKM 400GB128D...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
19-09-2005 RAA
© by SEMIKRON
SKM 400GB128D...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
3
19-09-2005 RAA
© by SEMIKRON
SKM 400GB128D...
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
Dimensions in mm
File no. E 63 532
7K
ꢗꢙꢈꢅ N -#
ꢗꢙꢈꢅ N -F
ꢗꢙꢈꢅ N -2
7&D
7&5
ꢗꢙꢈꢅ N -#
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-09-2005 RAA
© by SEMIKRON
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