CZT5551 [SECOS]

Epitaxial Planar Transistor; 外延平面晶体管
CZT5551
型号: CZT5551
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Epitaxial Planar Transistor
外延平面晶体管

晶体 晶体管 光电二极管 放大器
文件: 总2页 (文件大小:559K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CZT5551  
NPN Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
RoHS Compliant Product  
SOT-223  
Description  
The CZT5551 is designed for general  
purpose applications requiring high  
breakdown voltages.  
REF.  
REF.  
Min.  
6.70  
2.90  
0.02  
0̓  
Max.  
7.30  
3.10  
0.10  
10̓  
Min.  
13̓TYP.  
2.30 REF.  
Max.  
A
C
D
E
I
B
J
5 5 5 1  
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
Date Code  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)  
Symbol  
Parameter  
Value  
Units  
VCBO  
VCEO  
VEBO  
Collector-Base Voltage  
180  
160  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6
mA  
600  
IC  
Collector Current-Continuous  
Total Power Dissipation  
W
1.5  
PD  
O
Storage Temperature  
-55~-150  
Junction and  
C
TJ,  
Tstg  
ELECTRICAL CHARACTERISTICS Tamb=25oC unlessotherwise specified  
Parameter  
Test conditions  
Symbol  
MIN  
TYP  
MAX  
UNIT  
V
_
_
_
_
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Ic= 100uA,IE=0  
IC= 1mA,IB=0  
IE= 10uA,IC=0  
V(BR)CBO  
V(BR)CEO  
180  
160  
V
_
_
_
6
_
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)EBO  
ICBO  
V
nA  
V
CB= 120V,IE=0  
EB= 4V,IC=0  
VCE= 5V, IC= 1mA  
CE= 5V, IC= 10mA  
50  
_
_
_
50  
_
nA  
_
IEBO  
V
Emitter cut-off current  
hFE  
hFE  
hFE  
1
2
3
80  
80  
DC current gain  
_
_
160  
_
V
400  
_
50  
_
VCE= 5V, IC= 50mA  
IC= 10mA,IB= 1mA  
IC= 50mA,IB= 5mA  
IC= 10mA,IB= 1mA  
50mA,  
_
_
_
_
VCE(sat)1  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
0.15  
0.2  
1
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
_
_
_
IC=  
IB= 5mA  
1
VCE= 10V,IC= 10mA,  
f = 100MHz  
_
_
f
T
Transition frequency  
100  
_
300  
6
MHz  
pF  
Collector output capacitance  
Cob  
V
CB= 10V, f=1MHz,IE=0  
CLASSIFICATION OF hFE  
Rank  
A
N
C
Range  
80-200  
100-240  
160-400  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev. B  
Page 1 of 2  
CZT5551  
NPN Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
Characteristics Curve  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev. B  
Page2 of 2  

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