CZT5551 [SECOS]
Epitaxial Planar Transistor; 外延平面晶体管
| 型号： | CZT5551 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：559K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZT5551
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5551 is designed for general
purpose applications requiring high
breakdown voltages.
REF.
REF.
Min.
6.70
2.90
0.02
0̓
Max.
7.30
3.10
0.10
10̓
Min.
13̓TYP.
2.30 REF.
Max.
A
C
D
E
I
B
J
5 5 5 1
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
Date Code
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
Collector-Base Voltage
180
160
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
6
mA
600
IC
Collector Current-Continuous
Total Power Dissipation
W
1.5
PD
O
Storage Temperature
-55~-150
Junction and
C
TJ,
Tstg
ELECTRICAL CHARACTERISTICS Tamb=25oC unlessotherwise specified
Parameter
Test conditions
Symbol
MIN
TYP
MAX
UNIT
V
_
_
_
_
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Ic= 100uA,IE=0
IC= 1mA,IB=0
IE= 10uA,IC=0
V(BR)CBO
V(BR)CEO
180
160
V
_
_
_
6
_
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
V
nA
V
CB= 120V,IE=0
EB= 4V,IC=0
VCE= 5V, IC= 1mA
CE= 5V, IC= 10mA
50
_
_
_
50
_
nA
_
IEBO
V
Emitter cut-off current
hFE
hFE
hFE
1
2
3
80
80
DC current gain
_
_
160
_
V
400
_
50
_
VCE= 5V, IC= 50mA
IC= 10mA,IB= 1mA
IC= 50mA,IB= 5mA
IC= 10mA,IB= 1mA
50mA,
_
_
_
_
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
0.15
0.2
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
_
_
_
IC=
IB= 5mA
1
VCE= 10V,IC= 10mA,
f = 100MHz
_
_
f
T
Transition frequency
100
_
300
6
MHz
pF
Collector output capacitance
Cob
V
CB= 10V, f=1MHz,IE=0
CLASSIFICATION OF hFE
Rank
A
N
C
Range
80-200
100-240
160-400
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev. B
Page 1 of 2
CZT5551
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev. B
Page2 of 2
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