CZT5551HC [CENTRAL]
SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR; 表面贴装高电流型硅NPN晶体管
| 型号： | CZT5551HC |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CZT5551HC
Semiconductor Corp.
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551HC
type is a high current NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage and high current
amplifier applications.
MARKING CODE: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
180
160
6.0
1.0
2.0
V
V
CBO
CEO
EBO
V
A
W
I
P
C
D
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
stg
-65 to +150
62.5
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=120V
=120V, T =100°C
=4.0V
50
50
50
nA
µA
nA
V
V
V
V
V
V
V
CBO
CBO
EBO
CBO
CEO
CB
CB
EB
A
BV
BV
BV
V
V
V
V
I =100µA
180
160
6.0
C
I =1.0mA
C
I =10µA
EBO
E
I =10mA, I =1.0mA
0.15
0.20
1.00
1.00
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
C
B
B
B
B
I =50mA, I =5.0mA
C
I =10mA, I =1.0mA
C
I =50mA, I =5.0mA
C
R0 (28-January 2005)
TM
CZT5551HC
Central
Semiconductor Corp.
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
h
V
V
V
V
V
V
=5.0V, I =1.0mA
80
80
30
FE
CE
CE
CE
CE
CE
CB
C
h
h
h
=5.0V, I =10mA
250
FE
FE
FE
C
=5.0V, I =50mA
C
=10V, I =1.0A
10
C
f
=10V, I =10mA, f=100MHz
100
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
15
ob
E
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
R0 (28-January 2005)
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