CZT5551HCBKPBFREE [CENTRAL]

Transistor,;
CZT5551HCBKPBFREE
型号: CZT5551HCBKPBFREE
厂家: CENTRAL SEMICONDUCTOR CORP    CENTRAL SEMICONDUCTOR CORP
描述:

Transistor,

晶体 晶体管 功率双极晶体管 光电二极管 放大器
文件: 总2页 (文件大小:96K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
Ce n t r a l  
CZT5551  
S e m ic o n d u c t o r Co r p .  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
TheCENTRALSEMICONDUCTORCZT5551  
typeisanNPNsilicontransistormanufactured  
by the epitaxial planar process, epoxy molded  
inasurfacemountpackage, designedforhigh  
voltage amplifier applications.  
SOT-223 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
180  
160  
6.0  
600  
2.0  
V
V
V
mA  
W
CBO  
CEO  
EBO  
I
P
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
o
T ,T  
-65 to +150  
62.5  
C
C/W  
J stg  
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
50  
UNITS  
I
I
I
V
V
V
=120V  
=120V, T =100 C  
=4.0V  
nA  
µA  
nA  
V
V
V
V
V
V
V
CBO  
CBO  
EBO  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
FE  
CB  
CB  
EB  
o
A
50  
BV  
BV  
BV  
V
V
V
V
h
I =100µA  
180  
160  
6.0  
C
I =1.0mA  
C
I =10µA  
E
I =10mA, I =1.0mA  
0.15  
0.20  
1.00  
1.00  
C
B
B
B
B
I =50mA, I =5.0mA  
C
I =10mA, I =1.0mA  
C
I =50mA, I =5.0mA  
C
V
=5.0V, I =1.0mA  
80  
80  
30  
CE  
CE  
CE  
C
h
h
V
V
=5.0V, I =10mA  
C
250  
FE  
=5.0V, I =50mA  
FE  
C
316  
SYMBOL  
TEST CONDITIONS  
MIN  
100  
MAX  
300  
6.0  
20  
200  
UNITS  
MHz  
pF  
f
C
C
h
V
V
=10V, I =10mA, f=100MHz  
T
ob  
ib  
fe  
CE C  
=10V, I =0, f=1.0MHz  
CB  
EB  
CE  
CE  
E
V
V
V
=0.5V, I =0, f=1.0MHz  
pF  
C
=10V, I =1.0mA, f=1.0kHz  
C
50  
NF  
=5.0V, I =200µA, R =10Ω  
C
S
f=10Hz to 15.7kHz  
8.0  
dB  
All dimensions in inches (mm).  
LEAD CODE:  
1) BASE  
2) COLLECTOR  
3) EMITTER  
3) COLLECTOR  
R2  
317  

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