CZT5551HCBKPBFREE [CENTRAL]
Transistor,;
| 型号： | CZT5551HCBKPBFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor, 晶体 晶体管 功率双极晶体管 光电二极管 放大器 |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Ce n t r a l
CZT5551
S e m ic o n d u c t o r Co r p .
NPN SILICON TRANSISTOR
DESCRIPTION:
TheCENTRALSEMICONDUCTORCZT5551
typeisanNPNsilicontransistormanufactured
by the epitaxial planar process, epoxy molded
inasurfacemountpackage, designedforhigh
voltage amplifier applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
180
160
6.0
600
2.0
V
V
V
mA
W
CBO
CEO
EBO
I
P
C
Power Dissipation
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
-65 to +150
62.5
C
C/W
J stg
Θ
JA
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
50
UNITS
I
I
I
V
V
V
=120V
=120V, T =100 C
=4.0V
nA
µA
nA
V
V
V
V
V
V
V
CBO
CBO
EBO
CBO
CEO
EBO
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
CB
CB
EB
o
A
50
BV
BV
BV
V
V
V
V
h
I =100µA
180
160
6.0
C
I =1.0mA
C
I =10µA
E
I =10mA, I =1.0mA
0.15
0.20
1.00
1.00
C
B
B
B
B
I =50mA, I =5.0mA
C
I =10mA, I =1.0mA
C
I =50mA, I =5.0mA
C
V
=5.0V, I =1.0mA
80
80
30
CE
CE
CE
C
h
h
V
V
=5.0V, I =10mA
C
250
FE
=5.0V, I =50mA
FE
C
316
SYMBOL
TEST CONDITIONS
MIN
100
MAX
300
6.0
20
200
UNITS
MHz
pF
f
C
C
h
V
V
=10V, I =10mA, f=100MHz
T
ob
ib
fe
CE C
=10V, I =0, f=1.0MHz
CB
EB
CE
CE
E
V
V
V
=0.5V, I =0, f=1.0MHz
pF
C
=10V, I =1.0mA, f=1.0kHz
C
50
NF
=5.0V, I =200µA, R =10Ω
C
S
f=10Hz to 15.7kHz
8.0
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
3) COLLECTOR
R2
317
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