CZT5551HCLEADFREE [CENTRAL]
Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4;
| 型号： | CZT5551HCLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Power Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, PLASTIC PACKAGE-4 放大器 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CZT5551HC
www.centralsemi.com
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551HC type
is a high current NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for high voltage and
high current amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
A
Collector-Base Voltage
V
V
V
180
160
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
6.0
V
Continuous Collector Current
Power Dissipation
I
1.0
A
C
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
°C/W
J, stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
µA
nA
V
I
I
I
V
V
V
=120V
50
50
50
CBO
CBO
EBO
CB
CB
EB
=120V, T =100°C
A
=4.0V
BV
BV
BV
I =100µA
180
160
6.0
CBO
CEO
C
I =1.0mA
V
C
I =10µA
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
0.15
0.20
1.00
1.00
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
V
C
B
I =10mA, I =1.0mA
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
h
V
=5.0V, I =1.0mA
80
80
30
CE
CE
CE
CE
CE
CB
C
V
V
V
V
V
=5.0V, I =10mA
250
FE
C
=5.0V, I =50mA
FE
C
=10V, I =1.0A
10
FE
C
f
=10V, I =10mA, f=100MHz
100
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
15
ob
E
R1 (1-March 2010)
CZT5551HC
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R1 (1-March 2010)
www.centralsemi.com
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