CZT5551E [CENTRAL]
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR; 增强型规格表面贴装NPN硅晶体管
| 型号： | CZT5551E |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CZT5551E
Semiconductor Corp.
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551E
is an NPN Silicon Transistor, packaged in an
SOT-223 case, designed for general purpose
amplifier applications requiring high breakdown
voltage.
MARKING CODE: FULL PART NUMBER
FEATURES:
SOT-223 CASE
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA Max
• Low Saturation Voltage 100mV Max @ 50mA
• Complementary Device CZT5401E
• SOT-223 Surface Mount Package
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
250
220
6.0
V
♦
♦
CBO
V
V
CEO
V
V
EBO
I
600
2.0
mA
W
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J
-65 to +150
62.5
°C
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V
V
V
=120V
50
50
50
nA
μA
nA
V
CBO
CB
CB
EB
I
=120V, T =100°C
A
=4.0V
CBO
I
EBO
BV
I =100μA
250
220
6.0
♦
♦
CBO
C
BV
I =1.0mA
V
CEO
C
BV
I =10μA
V
EBO
E
V
I =10mA, I =1.0mA
75
mV
mV
V
♦
♦
CE(SAT)
C
B
V
I =50mA, I =5.0mA
100
1.00
1.00
CE(SAT)
C
B
V
I =10mA, I =1.0mA
BE(SAT)
C B
V
I =50mA, I =5.0mA
V
BE(SAT)
C
B
Enhanced Specification
♦
R0 (10-May 2006)
TM
CZT5551E
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
300
UNITS
h
V
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA
C
120
120
75
♦
♦
♦
♦
FE
CE
CE
CE
CE
CE
CB
EB
CE
CE
h
=5.0V, I =10mA
FE
C
h
=5.0V, I =50mA
C
FE
h
=10V, I =150mA
25
FE
C
f
=10V, I =10mA, f=100MHz
C
100
300
6.0
20
MHz
pF
T
C
=10V, I =0, f=1.0MHz
ob
E
C
=0.5V, I =0, f=1.0MHz
C
pF
ib
h
=10V, I =1.0mA, f=1.0kHz
50
200
fe
C
NF
=5.0V, I =200μA, R =10Ω
C
S
f=10Hz to 15.7kHz
8.0
dB
Enhanced Specification
♦
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
R0 (10-May 2006)
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