BDY55 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BDY55 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY55
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·LF large signal power amplification.
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
100
60
UNIT
V
Open base
V
Open collector
7
V
15
A
IB
Base current
7
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
117
200
-65~200
W
ꢀ
Tj
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY55
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A ; IB=0
Collector-emitter saturation voltage IC=4A ;IB=0.4A
Collector-emitter saturation voltage IC=10A ;IB=3.3A
60
1.1
2.5
1.8
V
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4 A; VCE=4V
V
VCE=100V; VBE=-1.5V
TC=150ꢀ
5.0
30
ICEX
mA
mA
mA
ICEO
VCE=30V; IB=0
0.7
5.0
70
IEBO
VEB=7V; IC=0
hFE-1
IC=4A ; VCE=4V
20
10
10
hFE-2
DC current gain
IC=10A ; VCE=4V
IC=1A ; VCE=4V;f=10MHz
fT
Transition frequency
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY55
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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