BDY55_12 [COMSET]
NPN SILICON TRANSISTORS, DIFFUSED MESA; NPN硅晶体管， DIFFUSED MESA
| 型号： | BDY55_12 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | NPN SILICON TRANSISTORS, DIFFUSED MESA |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDY55 – BDY56
NPN SILICON TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDY55
BDY56
BDY55
BDY56
60
120
100
150
VCEO
VCBO
Collector-Emitter Voltage
V
V
Collector-Base Voltage
VEBO
IC
IB
Emitter-Base Voltage
Collector Current
Base Current
7
15
7
V
A
A
PTOT
TJ
TS
Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
117
200
-65 to +200
W
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.5
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1 | 3
BDY55 – BDY56
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
60
120
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Breakdown IC = 200 mA
VCEO(SUS)
ICEO
V
Voltage (*)
IB = 0
VCE = 30 V
VCE = 60 V
0.7
0.5
5
Collector-Emitter Cutoff
Current
mA
mA
IEBO
Emitter-Base Cutoff Current VEB = 7 V
3
VCE = 100 V
VBE = -1.5 V
VCE = 100 V
-
-
-
-
-
-
-
-
5
30
3
BDY55
VBE = -1.5 V
Collector-Emitter Cutoff
Current
T
CASE = 150°C
ICEX
mA
VCE = 150 V
VBE = -1.5 V
VCE = 150 V
VBE = -1.5 V
BDY56
BDY55
30
T
CASE = 150°C
IC = 4.0 A
IB = 0.4 A
-
-
1.1
Collector-Emitter saturation
Voltage (*)
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
VCE(SAT)
V
IC = 10 A
IB = 3.3 A
-
-
-
-
-
-
2.5
2.5
1.8
70
Collector-Emitter saturation IC = 10 A
VCE(SAT)
VBE
Voltage (*)
IB = 3.3 A
IC = 4.0 A
VCE = 4.0 V
VCE = 4 V
IC = 4 A
Base-Emitter Voltage (*)
-
V
V
20
10
Static Forward Current
transfer ratio (*)
HFE
VCE = 4 V
IC =10 A
VCE = 4.0 V
IC = 1.0 A,
f = 10 MHz
IC = 5 A
IB = 1 A
IC = 5 A
BDY55
fT
Transition Frequency
Turn-on time
10
-
-
-
-
-
0.5
2
MHz
µs
BDY56
BDY55
BDY56
td + tr
ts + tf
BDY55
BDY56
Turn-off time
IB1 = 1 A
IB2 = -0.5 A
-
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
23/10/2012
COMSET SEMICONDUCTORS
2 | 3
BDY55 – BDY56
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
23/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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