BDY57_12 [COMSET]
SILICON TRANSISTORS, DIFFUSED MESA; 硅晶体管的漫射MESA
| 型号： | BDY57_12 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON TRANSISTORS, DIFFUSED MESA |
| 文件： | 总3页 (文件大小：1093K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN BDY57 – BDY58
SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDY57
BDY58
BDY57
BDY58
80
125
120
160
VCEO
VCBO
Collector-Emitter Voltage
Collector-Base Voltage
V
V
VEBO
IC
IB
Emitter-Base Voltage
Collector Current
Base Current
10
25
6
V
A
A
PTOT
TJ TS
Power Dissipation
Junction Temperature Storage Temperature
@ TC = 25°
175
-65 to +200
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-C
Thermal Resistance, Junction to Case
1
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1 | 3
NPN BDY57 – BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDY57
80
-
-
-
-
-
-
-
-
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector-Base Cutoff
Current
Collector-Emitter Cutoff
Current
VCEO(SUS)
V(BR)CBO
V(BR)EBO
ICBO
IC=100 mA, IB=0
IC=5.0mA, IE=0
IE=5.0 A, IC=0
V
V
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
125
120
160
-
0.5
1.4
V
-
-
-
-
1.0
0.5
VCB=120 V, IE=0 V
mA
mA
mA
V
VCE=80 V, RBE=10
TCASE=100°C
ICER
-
-
-
0.25
0.5
-
10
0.5
1.4
60
-
Emitter-Base Cutoff
Current
Collector-Emitter
saturation Voltage (*)
IEBO
VEB=10 V, IC=0 V
IC=10 A, IB=1.0 A
VCE=4 V, IC=10 A
VCE=4 V, IC=20 A
VCE(SAT)
-
20
-
Static Forward Current
transfer ratio (*)
h21E
15
-
V
VCE=4 V, IC=10 A
TCASE=-30°C
VCE=15 V, IC=1.0 A
f=10 MHz
10
10
-
-
fT
Transition Frequency
Turn-on time
30
0.25
1
-
MHz
µs
td + tr
ts + tf
IC=15 A, IB=1.5 A
1
IC=15 A, IB1=1.5 A
IB2=-1.5 A
Turn-off time
-
2
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
09/11/2012
COMSET SEMICONDUCTORS
2 | 3
NPN BDY57 – BDY58
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min typ max
A
B
C
D
E
G
N
P
R
U
V
11
0.97
1.5
-
-
-
-
-
-
-
-
-
-
-
13.10
1.15
1.65
8.92
22
8.32
19
10.70
16.50
25
11.1
17.20
27,20
4.21
40.13
30.40
3.84
38.50
29.90
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use
of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without
notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor
does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in
life support devices or systems.
www.comsetsemi.com
09/11/2012
info@comsetsemi.com
3 | 3
COMSET SEMICONDUCTORS
相关型号：
©2020 ICPDF网 联系我们和版权申明