BDY57 [COMSET]
NPN SILICON TRANSISTORS, DIFFUSED MESA; NPN硅晶体管， DIFFUSED MESA
| 型号： | BDY57 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | NPN SILICON TRANSISTORS, DIFFUSED MESA |
| 文件： | 总3页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDY57 – BDY58
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDY57
BDY58
BDY57
BDY58
80
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
VCEO
V
125
120
160
VCBO
VEBO
V
V
BDY57
10
25
6
BDY58
BDY57
BDY58
BDY57
BDY58
Collector Current
Base Current
IC
IB
A
A
BDY57
BDY58
Power Dissipation
@ TC = 25°
PTOT
175
Watts
Junction Temperature
Storage Temperature
TJ
TS
BDY57
BDY58
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
BDY57
BDY58
Thermal Resistance, Junction to Case
RthJ-C
1
°C/W
COMSET SEMICONDUCTORS
1/3
BDY57 – BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Test Condition(s)
Symbol
VCEO(SUS)
Ratings
Min Typ Mx Unit
BDY57
80
-
-
-
-
Collector-Emitter
IC=100 mA, IB=0
V
Breakdown Voltage (*)
BDY58
125
Collector-Emitter saturation
Voltage (*)
BDY57
BDY58
IC=10 A, IB=1.0 A
-
0.5 1.4
V
VCE(SAT)
V(BR)CBO
V(BR)EBO
BDY57
BDY58
120
160
-
-
-
-
Collector-Base Breakdown
Voltage (*)
IC=5.0mA, IE=0
IE=5.0 A, IC=0
V
V
Emitter-Base Breakdown
Voltage (*)
BDY57
BDY58
-
0.5 1.4
1.0
0.5
Collector-Base Cutoff
Current
BDY57
BDY58
VCB=120 V
IE=0 V
-
-
mA
mA
mA
ICBO
ICER
IEBO
0.5
VCE=80 V
Collector-Emitter Cutoff
Current
BDY57
BDY58
RBE=10 Ω
-
10
T
CASE=100°C
BDY57
BDY58
-
-
VEB=10 V
IC=0 V
Emitter-Base Cutoff Current
0.25 0.5
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
VCE=4 V, IC=10 A
VCE=4 V, IC=20 A
20
-
-
15
-
60
-
Static Forward Current
transfer ratio (*)
V
h21E
VCE=4 V, IC=10 A, TCASE=-
30°C
10
-
BDY57
BDY58
VCE=15 V, IC=1.0 A, f=10
MHz
Transition Frequency
Turn-on time
10
-
30
-
MHz
fT
BDY57
BDY58
IC=15 A, IB=1.5 A
0.25
1
td + tr
µs
COMSET SEMICONDUCTORS
2/3
BDY57 – BDY58
Test Condition(s)
Symbol
Ratings
Min Typ Mx Unit
IC=15 A,
BDY57
BDY58
IB1=1.5 A,
IB2=-1.5 A
Turn-off time
-
1
2
ts + tf
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A
B
C
D
E
G
H
L
25,45
38,8
1
1,52
30,09 1,184
17,11
9,78
11,09
8,33
1,62
19,43
1
0,67
0,38
0,43
0,32
0,06
0,76
0,04
0,16
M
N
P
4,08
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
COMSET SEMICONDUCTORS
3/3
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