BDY56 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BDY56 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY56
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·LF large signal power amplification.
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
150
120
7
UNIT
V
Open base
V
Open collector
V
15
A
IB
Base current
7
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
117
W
℃
℃
Tj
200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.5
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY56
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A ; IB=0
Collector-emitter saturation voltage IC=4A ;IB=0.4A
Collector-emitter saturation voltage IC=10A ;IB=3.3A
120
1.1
2.5
1.8
V
V
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4 A; VCE=4V
V
VCE=150V; VBE=-1.5V
3.0
30
ICEX
mA
mA
mA
TC=150℃
ICEO
VCE=60V; IB=0
VEB=7V; IC=0
0.5
3.0
70
IEBO
hFE-1
IC=4A ; VCE=4V
IC=10A ; VCE=4V
IC=10A ; VCE=4V
20
10
10
hFE-2
DC current gain
fT
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY56
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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