BDX18 [SAVANTIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BDX18 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX18
DESCRIPTION
·With TO-3 package
·High switching speed
APPLICATIONS
·LF large signal power amplification
·Suitable for series and shunt regulators, high
fidelity amplifiers and power switching circuits
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-100
-60
UNIT
V
Open base
V
Open collector
-7
V
-15
A
IB
Base current
-7
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
117
W
ꢀ
Tj
-65~200
-65~200
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
1.5
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX18
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR) EBO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
-60
-7
TYP. MAX UNIT
Collector-emitter sustaining voltage IC=-0.2A ; IB=0
V
V
Emitter-base breakdown voltage
IE=-1mA ; IC=0
Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
-1.1
-1.8
V
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-4A;VCE=-4V
V
VCE=-90V;VBE=1.5V
VCE=-60V;VBE=1.5V;TC=150ꢀ
-5
-10
ICEX
mA
mA
IEBO
VEB=-7V; IC=0
-5
hFE
IC=-4A ; VCE=-4V
20
70
fT
Transition frequency
IC=-1A ; VCE=-10V;f=1MHz
4
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX18
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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