BDX18_12 [COMSET]
PNP SILICON TRANSISTOR EPITAXIAL BASE; PNP硅晶体管外延基地
| 型号： | BDX18_12 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | PNP SILICON TRANSISTOR EPITAXIAL BASE |
| 文件： | 总3页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Thermal Fatigue Inspection
Compliance to RoHS
Applications :
•
•
•
•
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
Solenoid drivers
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
VCEO
VCER
VEBO
VCBO
VCEX
IC
Collector-Emitter Voltage
-60
V
V
V
V
V
A
-70
-65
Collector-Emitter
Voltage
RBE=100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
-7
-100
-70
-90
-70
Collector-Emitter
Voltage
VBE=+1.5 V
Collector Current
Base Current
-15
IB
-7
A
PT
TJ
Power Dissipation
@ TC = 25°
117
W
Junction Temperature
-65 to +200
°C
TS
Storage Temperature
05/10/2012
COMSET SEMICONDUCTORS
1 | 3
BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.5
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Collector-Emitter
Breakdown Voltage (*) IB=0
Collector-Emitter
Breakdown Voltage (*) VBE=1.5 V
Collector-Emitter
Breakdown Voltage (*)
IC=200 mA
-60
VCEO(SUS)
VCEX(SUS)
VCER(SUS)
-
-
V
V
V
-60
-90
-70
-70
-65
-
-
-
-
-
-
-
-
IC=-100 mA
IC=-200 mA
RBE=100 Ω
VCE=-90 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VCE=-70 V
VBE=1.5 V
-
-
-5
-10
-5
BDX18
Collector-Emitter
Cutoff Current
ICEX
mA
-
-
-
-
BDX18N
VCE=-60 V, VBE=1.5 V
-10
-5
T
CASE=150°C
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Emitter-Base Cutoff
Current
Base-Emitter Voltage
(*)
Collector-Emitter
Saturation Voltage
IEBO
VBE
VCE(SAT)
fT
VEB=-7 V
-
-
mA
V
IC=-4.0 A, VCE=-4.0V
IC=-4.0 A, IB=-0.4V
-
-
-1.8
-1.1
-
-
-
V
IC =-1A, VCE=-10 V
f=1 MHz
Transition Frequency
-
4
-
MHz
-
Static Forward Current
Transfer Ratio (*)
h21E
VCE=-4.0 V, IC=-4.0 A
20
70
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
05/10/2012
COMSET SEMICONDUCTORS
2 | 3
BDX18 – BDX18N
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
05/10/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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