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BDX20 [ISC]

isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
BDX20
型号： BDX20
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

isc Silicon PNP Power Transistor
ISC的硅PNP功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：77K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BDX20  
DESCRIPTION  
·High Current Capability  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS)= -140V(Min)  
·High Switching Speed  
APPLICATIONS  
·Designed for LF large signal power amplification.  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
VCBO  
VCEX  
VCEO  
VEBO  
IC  
PARAMETER  
VALUE  
-160  
-160  
-140  
-7  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage- VBE= 1.5V  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
Collector Current-Continuous  
Base Current-Continuous  
-10  
A
IB  
-7  
A
Collector Power Dissipation  
@TC=25℃  
PC  
117  
W
℃
℃
TJ  
Junction Temperature  
Storage Temperature  
200  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.5  
℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BDX20  
ELECTRICAL CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEX  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
CONDITIONS  
MIN  
-140  
-160  
TYP.  
MAX  
UNIT  
V
IC= -200mA ; IB= 0  
IC= -100mA ; VBE= 1.5V  
IC= -3A; IB= -0.3A  
IC= -10A; IB= -2A  
V
-1.0  
-5.0  
V
VCE  
-1  
-2  
(sat)  
V
VCE  
(sat)  
IC= -3A ; VCE= -4V  
IC= -10A ; VCE= -4V  
-1.7  
-5.7  
V
VBE(  
)-1  
on  
Base-Emitter On Voltage  
V
VBE(  
)-2  
on  
VCE= -140V;VBE= 1.5V  
VCE= -140V;VBE=1.5V,TC= 150℃  
-1.0  
-10  
ICEX  
ICBO  
IEBO  
Collector Cutoff Current  
mA  
mA  
mA  
Collector Cutoff Current  
VCB= -140V; IE= 0  
-1.0  
-5.0  
70  
Emitter Cutoff Current  
VEB= -7.0V; IC= 0  
hFE-1  
hFE-2  
fT  
DC Current Gain  
IC= -3A ; VCE= -4V  
20  
DC Current Gain  
IC= -10A ; VCE= -4V  
IC= -1A;VCE=-10V;ftest= 1.0MHz  
10  
Current Gain-Bandwidth Product  
4
MHz  
2
isc Website：www.iscsemi.cn  

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