BDX20_12 [COMSET]
SILICON TRANSISTORS EPITAXIAL BASE; 硅晶体管外延基地
| 型号： | BDX20_12 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | SILICON TRANSISTORS EPITAXIAL BASE |
| 文件： | 总3页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP BDX20
SILICON TRANSISTORS EPITAXIAL BASE
The BDX20 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCBO
VCEO
VCEX
VEBO
IC
IB
PTOT
TJ
Collector to Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
-60
-140
-160
-7
-10
-7
V
V
V
V
A
VBE=1.5 V
A
117
200
-65 to +200
W
°C
°C
TS
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Value
Unit
Thermal Resistance, Junction to Case
1.5
°C/W
08/11/2012
COMSET SEMICONDUCTORS
1 | 3
PNP BDX20
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter Breakdown
Voltage (*)
VCEO(SUS)
VCEX
IC=-200 mA, IB=0
-140
-
-
V
V
IC=-100 mA, VBE=1.5 V -160
-
-
-
-
VCE=-140 V, VBE=1.5 V
VCE=-140 V, VBE=1.5 V
-
-
-1.0
-10
ICEX
Collector Cutoff Current
mA
T
CASE=150°C
ICBO
IEBO
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
VCB=-140 V, IE=0
VBE=-7.0 V, IC=0
-
-
-
-
-1.0
-5.0
mA
mA
IC=-3 A, VCE=-4 V
IC=10 A, VCE=-4 V
IC=-3 A, IB=-0.3 A
IC=-10 A, IB=-2 A
IC=-3 A, VCE=-4 V
IC=-10 A, VCE=-4 V
VCE=-10 V, IC=-1 A
f=1.0 MHz
20
-
-
-
-
-
10
-
70
Static Forward Current Transfer
Ratio (*)
Collector-Emitter Saturation
Voltage (*)
h21E
VCE(SAT)
VBE
-
V
-
-1.0
-5.0
-
-
-1.7
-5.7
Base-Emitter Voltage (*)
V
-
-
fT
Transition Frequency
4
-
-
MHz
In accordance with JEDEC Registration Data
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
08/11/2012
COMSET SEMICONDUCTORS
2 | 3
PNP BDX20
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
max
A
B
C
D
F
11 13.10
0.97
1.15
1.65
8.92
20
1.5
8.32
19
G
N
P
R
U
V
10.70
11.1
16.50 17.20
25
4
26
4.09
38.50 39.30
30 30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
08/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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