首页 |元器件品牌

BDX20 [COMSET]

PNP SILICON TRANSISTORS EPITAXIAL BASE; PNP硅晶体管外延基地
BDX20
型号： BDX20
厂家： COMSET SEMICONDUCTOR    COMSET SEMICONDUCTOR
描述：

PNP SILICON TRANSISTORS EPITAXIAL BASE
PNP硅晶体管外延基地

晶体 晶体管
文件： 总2页 (文件大小：133K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BDX20  
PNP SILICON TRANSISTORS EPITAXIAL BASE  
LF Large Signal Power Amplification  
High Current Fast Switching  
Thermal Fatigue Inspection  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
-60  
Unit  
V
V
Collector to Base Voltage  
#Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VCEX  
VEBO  
IC  
-140  
-160  
-7  
VBE=1.5 V  
V
V
Collector Current – Continuous  
Base Current – Continuous  
Total Device Dissipation  
Junction Temperature  
-10  
A
IB  
-7  
A
PTOT  
TJ  
117  
200  
Watts  
°C  
-65 to  
Storage Temperature  
TS  
°C  
+200  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
Thermal Resistance, Junction to Case  
RthJC  
1.5  
°C/W  
COMSET SEMICONDUCTORS  
1/2  
BDX20  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Symbol  
Ratings  
Test Condition(s)  
Min Typ Mx Unit  
Collector-Emitter Sustaining  
IC=-200 mA, IB=0  
-140  
-
-
V
V
VCEO(SUS)  
VCEX  
Voltage (*)  
Collector-Emitter  
IC=-100 mA, VBE=1.5 V  
-160  
-
-
Breakdown Voltage (*)  
VCE=-140 V, VBE=1.5 V  
-
-
-
-
-1.0  
-10  
Collector Cutoff Current  
mA  
ICEX  
VCE=-140 V, VBE=1.5 V, TCASE=150°C  
Collector-Base Cutoff  
Current  
Emitter-Base Cutoff Current VBE=-7.0 V, IC=0  
VCB=-140 V, IE=0  
-
-
-1.0  
mA  
mA  
-
ICBO  
IEBO  
h21E  
-
-
-5.0  
70  
IC=-3.0 A, VCE=-4.0 V  
IC=10 A, VCE=-4.0 V  
IC=-3.0 A, IB=-0.3 A  
IC=-10 A, IB=-2 A  
20  
-
-
10  
-
Static Forward Current  
Transfer Ratio (*)  
-
-1.0  
-5.0  
-
-
Collector-Emitter Saturation  
Voltage (*)  
V
VCE(SAT)  
-
-
IC=-3.0 Adc, VCE=-4.0 V  
IC=-10 A, VCE=-4.0 V  
VCE=-10 V, IC=-1.0 Adc, f=1.0 MHz  
-
-1.7  
-5.7  
Base-Emitter Voltage (*)  
V
VBE  
fT  
-
-
-
Transition Frequency  
In accordance with JEDEC Registration Data  
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%  
4
-
MHz  
MECHANICAL DATA CASE TO-3  
DIMENSIONS  
mm  
inches  
1,004  
1,53  
1,18  
0,68  
0,43  
0,46  
0,34  
0,6  
A
B
C
D
E
G
H
L
25,51  
38,93  
30,12  
17,25  
10,89  
11,62  
8,54  
1,55  
19,47  
1
M
N
P
0,77  
0,04  
0,16  
4,06  
Pin 1 :  
Pin 2 :  
Case :  
Base  
Emitter  
Collector  
COMSET SEMICONDUCTORS  
2/2  

相关型号：

BDX20_12

 SILICON TRANSISTORS EPITAXIAL BASE
COMSET

BDX25/66-6

 NPN
ETC

BDX27

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX27-10

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX27-16

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX27-6

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX28

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX28-10

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX28-16

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX28-6

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX29

 PNP SILICON PLANAR TRANSISTORS
INFINEON

BDX29-10

 PNP SILICON PLANAR TRANSISTORS
INFINEON
©2020 ICPDF网 联系我们和版权申明