2SC2827 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2827 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2827
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·400V/7A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
500
450
6
UNIT
V
V
V
A
W
ꢀ
Open base
Open collector
6
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2827
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
450
6
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA ; IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IE=1mA ; IC=0
V
IC=4A; IB=0.8A
IC=4A; IB=0.8A
VCB=500V ;IE=0
VCE=450V ; IB=0
VEB=5V; IC=0
1.0
1.5
V
VCE
VBE
(sat)
V
(sat)
ICBO
100
100
100
µA
µA
µA
ICEO
IEBO
hFE-2
fT
DC current gain
IC=3A ; VCE=2V
IC=0.5A ; VCE=10V
10
Transition frequency
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2827
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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