2SC2831A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2831A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2831 2SC2831A
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
800
900
500
8
UNIT
2SC2831
VCBO
Collector-base voltage
Open emitter
V
2SC2831A
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
V
Open collector
1.5
A
ICM
IB
Collector current-peak
Base current
3
A
0.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
25
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2831 2SC2831A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage IC=0.2A; L=25mH
Collector-emitter saturation voltage IC=1A; IB=0.2A
500
V
V
V
1.0
1.5
VCE
VBE
(sat)
Base-emitter saturation voltage
IC=1A; IB=0.2A
VCB=800V;IE=0
VCB=900V;IE=0
VEB=5V; IC=0
(sat)
2SC2831
Collector
ICBO
100
100
μA
μA
cut-off current
2SC2831A
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=0.1A ; VCE=5V
IC=1A ; VCE=5V
IC=0.2A ; VCE=10V
15
8
DC current gain
Transition frequency
2.5
MHz
Switching times
2SC2831
1.0
1.2
3.0
1.0
1.2
ton
tstg
tf
Turn-on time
μs
μs
μs
2SC2831A
IC=1A ; IB1=-IB2=-0.2A
VCC=200V
Storage time
Fall time
2SC2831
2SC2831A
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2831 2SC2831A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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