2SC2832 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC2832 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2832 2SC2832A
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High VCBO
·High speed switching
APPLICATIONS
·For high speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
800
900
500
8
UNIT
2SC2832
VCBO
Collector-base voltage
Open emitter
V
2SC2832A
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
V
Open collector
5
A
ICM
IB
Collector current-peak
Base current
10
A
3
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2832 2SC2832A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-emitter sustaining voltage IC=0.2A; L=25mH
Collector-emitter saturation voltage IC=3A; IB=0.6A
500
V
V
V
1.0
1.5
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
VCB=800V;IE=0
VCB=900V;IE=0
VEB=5V; IC=0
2SC2832
Collector
ICBO
100
100
μA
μA
cut-off current
2SC2832A
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=0.1A ; VCE=5V
IC=3A ; VCE=5V
IC=0.5A ; VCE=10V
15
8
DC current gain
Transition frequency
3
MHz
Switching times
2SC2832
1.0
1.2
3.0
1.0
1.2
ton
tstg
tf
Turn-on time
μs
μs
μs
2SC2832A
IC=3A ; IB1=-IB2=-0.6A
VCC=200V
Storage time
Fall time
2SC2832
2SC2832A
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2832 2SC2832A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号:
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