2SC2830 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管![2SC2830](http://pdffile.icpdf.com/pdf1/p00165/img/icpdf/2SC28_921733_icpdf.jpg)
型号: | 2SC2830 |
厂家: | ![]() |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2830
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
500
UNIT
Open emitter
Open base
V
V
V
A
W
ꢀ
400
Open collector
7
20
PT
Total power dissipation
Junction temperature
Storage temperature
Tmb=25ꢀ
200
Tj
200
Tstg
-65~200
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
Thermal resistance from junction to mounting base
1.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2830
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0
Collector-emitter saturation voltage IC=12A; IB=2.4A
400
1.2
1.5
0.1
0.1
0.1
50
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=12A; IB=2.4A
VCB=500V; IE=0
VCE=400V; IB=0
VEB=7V; IC=0
V
mA
mA
mA
ICEO
IEBO
hFE-1
IC=2.4A ; VCE=5V
IC=12A ; VCE=5V
15
10
hFE-2
DC current gain
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2830
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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