2SC2830_2014 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC2830_2014 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2830
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
500
UNIT
V
Open emitter
Open base
400
V
Open collector
7
V
20
A
PT
Total power dissipation
Junction temperature
Storage temperature
T
mb=25℃
200
W
℃
℃
Tj
200
Tstg
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
Thermal resistance from junction to mounting base
1.0
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2830
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0
Collector-emitter saturation voltage IC=12A; IB=2.4A
400
1.2
1.5
0.1
0.1
0.1
50
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=12A; IB=2.4A
VCB=500V; IE=0
VCE=400V; IB=0
VEB=7V; IC=0
V
mA
mA
mA
ICEO
IEBO
hFE-1
IC=2.4A ; VCE=5V
IC=12A ; VCE=5V
15
10
hFE-2
DC current gain
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2830
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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