2SK3495 [SANYO]
Ultrahigh-Speed Switching Applications; 超高速开关应用
| 型号： | 2SK3495 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | Ultrahigh-Speed Switching Applications |
| 文件： | 总4页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6970
N-Channel Silicon MOSFET
2SK3495
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Meets radial taping.
2087A
[2SK3495]
2.5
1.45
1.0
6.9
0.6
0.9
0.5
1
2
3
0.45
1 : Source
2 : Drain
3 : Gate
Specifications
2.54
2.54
Absolute Maximum Ratings at Ta=25°C
SANYO : NMP
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
60
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
±20
V
I
1.2
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
4.8
A
DP
P
1
150
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
60
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=60V, V =0
GS
10
DSS
DS
GS
DS
DS
I
=±16V, V =0
DS
±10
GSS
V
(off)
GS
=10V, I =1mA
1.0
1.0
2.4
D
Forward Transfer Admittance
yfs
=10V, I =0.6A
1.5
S
D
R
(on)1
I
D
I
D
=0.6A, V =10V
GS
380
500
500
680
mΩ
mΩ
DS
Static Drain-to-Source On-State Resistance
R
DS
(on)2
=0.6A, V =4V
GS
Continued on next page
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52501 TS IM TA-3256 No.6970-1/4
2SK3495
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
=20V, f=1MHz
Unit
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
70
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
=20V, f=1MHz
=20V, f=1MHz
20
5
t (on)
d
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
4
t
r
3
Turn-OFF Delay Time
Fall Time
t (off)
d
17
4
t
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =10V, I =1.2A
GS
3.6
0.6
0.5
0.86
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=10V, V =10V, I =1.2A
GS
D
=10V, V =10V, I =1.2A
GS
D
V
SD
I =1.2A, V =0
GS
1.2
S
Switching Time Test Circuit
V
=30V
DD
V
IN
I
=0.6A
D
10V
0V
R =50Ω
L
V
OUT
V
IN
D
PW=10µs
D.C.≤1%
G
P. G
50Ω
2SK3495
S
I
-- V
I
-- V
D GS
D
DS
1.4
1.2
1.0
0.8
0.6
0.4
2.5
2.0
1.5
1.0
8.0V
V
=10V
6.0V
DS
5.0V
0.5
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
DS
1.6
1.8
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT03235
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
GS
IT03234
R
DS
(on) -- V
R
DS
(on) -- Ta
GS
1200
1000
800
1000
800
600
400
Ta=25°C
I
=0.6A
D
600
400
200
0
200
0
0
2
4
6
8
10
12
14
16
18
20
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
IT03236
Ambient Temperature, Ta -- °C
IT03237
GS
No.6970-2/4
2SK3495
yfs -- I
I
-- V
SD
D
F
3
2
5
V
=0
V
=10V
GS
DS
3
2
1.0
7
5
1.0
7
5
3
2
3
2
0.1
0.1
7
5
7
5
3
2
3
2
0.01
0.001
0.01
0.4
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0.5
0.6
0.7
0.8
0.9
1.0
IT03239
0.01
0.1
1.0
IT03238
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
2
100
V
=30V
=10V
f=1MHz
DD
7
5
V
GS
100
3
2
Ciss
7
5
3
2
10
7
5
10
t (on)
d
7
5
3
2
3
2
1.0
0.1
2
3
5
7
2
3
0
10
20
30
40
50
60
IT03241
1.0
Drain Current, I -- A
IT03240
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
A S O
GS
10
9
10
7
5
V
=10V
DS
I
=4.8A
DP
I =1.2A
D
3
2
8
I =1.2A
D
7
1.0
7
5
6
5
3
2
4
0.1
7
5
3
Operation in this area
is limited by R (on).
2
DS
3
2
1
0
Ta=25°C
Single pulse
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
10
IT03242
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
DS
-- V
IT03243
P
-- Ta
D
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT03244
No.6970-3/4
2SK3495
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.
PS No.6970-4/4
相关型号：
2SK3498(2-7B1B)
TRANSISTOR 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power
TOSHIBA
2SK3498(2-7J1B)
TRANSISTOR 1 A, 450 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-7J1B, 3 PIN, FET General Purpose Power
TOSHIBA
2SK3498_06
Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications
TOSHIBA
©2020 ICPDF网 联系我们和版权申明