2SK3498_06 [TOSHIBA]
Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications; 硅N沟道MOS型DC / DC转换器，继电器驱动器和电机驱动应用
| 型号： | 2SK3498_06 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications |
| 文件： | 总3页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3498
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3498
DC/DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 4.0 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 0.6 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 400 V)
DSS
DS
Enhancement mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
400
400
±30
1
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
3
DP
Drain power dissipation (Tc = 25°C)
P
20
W
D
AS
AR
Single-pulse avalanche energy
E
113
mJ
(Note 2)
JEDEC
JEITA
―
Avalanche current
I
1
2
A
SC-64
2-7B1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
T
150
ch
Weight: 0.36 g (typ.)
Storage temperature range
T
stg
−55 to150
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
6.25
125
°C/W
°C/W
th (ch-c)
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 183 mH, R = 25 Ω,
V
DD
ch
G
I
= 1 A
AR
JEDEC
JEITA
―
―
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2006-11-06
2SK3498
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±25 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Drain-source breakdown voltage
Drain cutoff current
V
= 0 V
(BR) GSS
DS
= 400 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
V
I
= 0 V
450
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
5.5
⎯
V
th
DS
GS
DS
D
Drain-source ON-resistance
R
= 10 V, I = 0.5 A
4.2
0.6
145
35
80
Ω
S
DS (ON)
D
⎪Y ⎪
fs
= 10 V, I = 0.5 A
0.3
⎯
Forward transfer admittance
Input capacitance
D
C
C
⎯
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
⎯
⎯
DS
rss
C
oss
⎯
⎯
Output capacitance
Rise time
10 V
GS
0 V
I = 0.5 A
D
t
⎯
⎯
⎯
⎯
⎯
14
56
26
75
5.7
⎯
⎯
⎯
⎯
⎯
r
V
V
OUT
Turn-on time
Switching time
t
on
R
= 400 Ω
L
Fall time
t
f
∼
V
200 V
DD
<
Duty 1%, t = 10 μs
Turn-off time
t
w
off
Total gate charge
(gate-source plus gate-drain)
Q
g
∼
V
320 V, V
= 10 V, I = 1 A
GS D
nC
DD
Q
Gate-source charge
⎯
⎯
3.0
2.7
⎯
⎯
gs
Q
gd
Gate-drain (“Miller”) charge
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
I
A
A
Continuous drain reverse current (Note 1)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
3
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 1 A, V
= 1 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
GS
t
= 0 V,
650
14.6
ns
μC
rr
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
K3498
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-06
2SK3498
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3
2006-11-06
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